US5482566A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for removing etching residue using a hydroxylamine-containing composition
Assignee: EKC Technology Inc
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Filing: 1994-07-14
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Granted: 1996-01-09
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Expires: 2014-07-14
Abstract
Abstract A method for removing resists and etching residue from substrates using a stripping and cleaning composition containing hydroxylamine and at least one alkanolamine is described. Further, a method for removing etching residue from semiconductor substrates using a cleaning composition containing hydroxylamine, at least one alkanolamine, at least one chelating agent, and water is described. The preferred chelating agent is 1,2-dihydroxybenzene or a derivative thereof. The chelating agent provides added stability and effectiveness to the cleaning composition of the method.
Inventors
- 👤 Wai M. Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 04:42
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/27; H10P70/273; B; B24; B24B; B24B37/00; B24B37/04; B24B37/042; C; C09; C09D; C09D9/00; C11; C11D; C11D3/00; C11D3/16; C11D3/20; C11D3/2003; C11D3/2041; C11D3/2058; C11D3/2065; C11D3/2075; C11D3/2086; C11D3/26; C11D3/30; C11D3/34; C11D3/3427; C11D3/3472; C11D3/43; C11D7/00; C11D7/22; C11D7/26; C11D7/261; C11D7/262; C11D7/263; C11D7/265; C11D7/267; C11D7/32; C11D7/3209; C11D7/3218; C11D7/3227; C11D7/3245; C11D7/3254; C11D7/3263; C11D7/3272; C11D7/3281; C11D7/34; C11D7/50; C11D7/5004; C11D7/5013; C23; C23G; C23G1/00; C23G1/02; C23G1/10; C23G1/103; C23G1/14; C23G1/20; C23G1/205; G; G03; G03F; G03F7/00; G03F7/26; G03F7/42; G03F7/422; G03F7/423; G03F7/425; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; H10P70/23; H10P70/234; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063; H10W20/071; H10W20/081; C11D2111/00; C11D2111/10; C11D2111/14; C11D2111/22; C11D2111/24; H10P70/10; H10P70/15
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
85 words
A method of removing etching residue from a resist-free substrate comprising contacting a substrate having etching residue present thereon with a composition consisting essentially of from about 5-50 weight % of hydroxylamine and from about 10-80 weight % of at least one alkanolamine which is miscible with said hydroxylamine and a balance of water at a temperature and for a time sufficient to remove said etching residue from said resist-free substrate wherein said resist was removed from said substrate by means other than said composition.
Claim 2
Independent Claim
85 words
A method of removing etching residue from a resist-free substrate comprising contacting a substrate having etching residue present thereon with a composition consisting essentially of from about 5-50 weight % of hydroxylamine and from about 10-80 weight % of at least one alkanolamine which is miscible with said hydroxylamine and a balance of water at a temperature and for a time sufficient to remove said etching residue from said resist-free substrate wherein said resist was removed from said substrate by means other than said composition.
Claim 3
Independent Claim
70 words
A method of removing etching residue from a substrate comprising contacting a substrate having etching residue present thereon with a composition consisting essentially of from about 5-50 weight % of hydroxylamine, from about 10-80 weight % of at least one alkanolamine which is miscible with said hydroxylamine, at least one chelating agent, and water at a temperature and for a time sufficient to remove said etching residue from said substrate.
Claim 4
Independent Claim
70 words
A method of removing etching residue from a substrate comprising contacting a substrate having etching residue present thereon with a composition consisting essentially of from about 5-50 weight % of hydroxylamine, from about 10-80 weight % of at least one alkanolamine which is miscible with said hydroxylamine, at least one chelating agent, and water at a temperature and for a time sufficient to remove said etching residue from said substrate.
Claim 5
Dependent Claim
19 words
At method according to claim 2 wherein said at least one chelating agent is 1,2-dihydroxybenzene or a derivative thereof.
Claim 6
Dependent Claim
25 words
A method according to claim 2 wherein said at least one chelating agent is a compound having a formula of ##STR7## wherein R═OH or COOH.
Claim 7
Dependent Claim
45 words
A method according to claim 2 wherein said at least one chelating agent is a compound having a formula of ##STR8## wherein R 1 , R 2 , R 3 and R 4 ═H or NH 4 , or the ammonium salt of said compound.
Claim 8
Dependent Claim
28 words
A method according to claim 1, 2, 3, 4 or 5 wherein the alkanol group of said at least one alkanolamine contains from 1 to 5 carbon atoms.
Claim 9
Dependent Claim
28 words
A method according to claim 1, 2, 3, 4 or 5 wherein said at least one alkanolamine is selected from the group consisting of monoamines, diamines, and triamines.
Claim 10
Dependent Claim
61 words
A method according to claim 1, 2, 3, 4 or 5 wherein said at least one alkanolamine has the formula R 1 R 2 --N--CH 2 CH 2 --O--R 3 wherein R 1 and R 2 are H, CH 3 , CH 3 CH 2 , or CH 2 CH 2 OH and R 3 is CH 2 CH 2 OH.
Claim 11
Dependent Claim
18 words
A method according to claim 1, 2, 3, 4 or 5 wherein said substrate is a semiconductor wafer.
Claim 12
Dependent Claim
26 words
A method according to claim 1, 2, 3, 4 or 5 wherein said temperature is in the range of from about room temperature to 100° C.
Claim 13
Dependent Claim
24 words
A method according to claim 1, 2, 3, 4 or 5 wherein said time is in the range of from 2 to 60 minutes.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-01-08 | 1999-07-10 | 2000-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-08 | 2003-07-10 | 2004-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-01-08 | 2007-07-10 | 2008-01-09 | $7700.00 | Window Closed / Lapsed |