Mask inspecting method and mask detector

Claim 1

A method of inspecting a phase-shifting mask used in an exposure step of a process of manufacturing a semiconductor device, comprising the steps of: (a) producing first pattern data as a function of a given circuit pattern; (b) converting said first pattern data into second pattern data used for manufacturing a phase-shifting mask; (c) manufacturing said phase-shifting mask as a function of said second pattern data; (d) detecting a pattern of said phase-shifting mask using optical conditions related with those of said exposure step which makes use of a phase shift method to obtain image data; and (e) checking said image data with said first pattern data; wherein said step of detecting a pattern of said phase-shifting mask is performed using a mask detector and comprises: projecting single-wavelength light using a light source; introducing said light from said light source onto a mask surface of said phase-shifting mask using a first optical system; forming an optical image of said light which passes through said phase-shifting mask using a second optical system; imaging said optical image of said phase-shifting mask to obtain image data using an imaging means; and setting said mask detector to satisfy the following relations, λ1=λ σ1=σ m1·A1=m·A m1>m where A1 and m1 represent a numerical aperture and a magnification of said mask detector, λ1 and σ1 represent a wavelength and a coherence of said light projected from said light source respectively, while A and m represent a numerical aperture and a magnification of said exposure device used in a process of manufacturing a semiconductor device, λ and σ represent a wavelength and a coherence of light used therein; said method further comprising inspecting with an enlarged pattern based on R1=(m1/m)·R; where R1 and R represent minimum resolving powers of said mask detector and said exposure device used in a process of manufacturing a semiconductor device, respectively.

Claim 2

A method of inspecting a phase-shifting mask used in an exposure step of a process of manufacturing a semiconductor device, comprising the steps of: (a) producing first pattern data as a function of a given circuit pattern; (b) converting said first pattern data into second pattern data used for manufacturing a phase-shifting mask; (c) manufacturing said phase-shifting mask as a function of said second pattern data; (d) detecting a pattern of said phase-shifting mask using optical conditions related with those of said exposure step which makes use of a phase shift method to obtain image data; and (e) checking said image data with said first pattern data; wherein said step of detecting a pattern of said phase-shifting mask is performed using a mask detector and comprises: projecting single-wavelength light using a light source; introducing said light from said light source onto a mask surface of said phase-shifting mask using a first optical system; forming an optical image of said light which passes through said phase-shifting mask using a second optical system; imaging said optical image of said phase-shifting mask to obtain image data using an imaging means; and setting said mask detector to satisfy the following relations, λ1=λ σ1=σ m1·A1=m·A m1>m where A1 and m1 represent a numerical aperture and a magnification of said mask detector, λ1 and σ1 represent a wavelength and a coherence of said light projected from said light source respectively, while A and m represent a numerical aperture and a magnification of said exposure device used in a process of manufacturing a semiconductor device, λ and σ represent a wavelength and a coherence of light used therein; said method further comprising inspecting with an enlarged pattern based on R1=(m1/m)·R; where R1 and R represent minimum resolving powers of said mask detector and said exposure device used in a process of manufacturing a semiconductor device, respectively.

Claim 7

A method of inspecting a phase-shifting mask used in an exposure step of a process of manufacturing a semiconductor device, comprising the steps of: (a) producing first pattern data as a function of a given circuit pattern; (b) converting said first pattern data into second pattern data used for manufacturing a phase-shifting mask; (c) manufacturing said phase-shifting mask as a function of said second pattern data; (d) exposing said phase-shifting mask using optical conditions related to those of said exposure step which makes use of a phase shift method to obtain a pattern for inspection; (e) imaging said pattern for inspection to obtain image data; and (f) checking said image data with said first pattern data; wherein said step of transferring said phase-shifting mask is performed using a mask exposure device and comprises: projecting single-wavelength light using a light source; introducing said light from said light source onto a mask surface of said phase-shifting mask using a first optical system; condensing light which passes through said phase-shifting mask onto a resist surface of said masking material using a second optical system; and setting said mask exposure device to satisfy the following relations, λ2=λ σ2=σ m2·A2=m·A m2>m where A2 and m2 represent a numerical aperture and a magnification of said mask exposure device, λ2 and σ2 represent a wavelength and a coherence of said light projected from said light source respectively, while A and m represent a numerical aperture and a magnification of said exposure device used in a process of manufacturing a semiconductor device, λ and σ represent a wavelength and a coherence of light used therein; and said method further comprises inspecting with an enlarged pattern based on R2=(m2/m)·R; where R2 and R represent minimum resolving powers of said mask exposure device and said exposure device used in a process of manufacturing a semiconductor device, respectively.

Claim 8

A method of inspecting a phase-shifting mask used in an exposure step of a process of manufacturing a semiconductor device, comprising the steps of: (a) producing first pattern data as a function of a given circuit pattern; (b) converting said first pattern data into second pattern data used for manufacturing a phase-shifting mask; (c) manufacturing said phase-shifting mask as a function of said second pattern data; (d) exposing said phase-shifting mask using optical conditions related to those of said exposure step which makes use of a phase shift method to obtain a pattern for inspection; (e) imaging said pattern for inspection to obtain image data; and (f) checking said image data with said first pattern data; wherein said step of transferring said phase-shifting mask is performed using a mask exposure device and comprises: projecting single-wavelength light using a light source; introducing said light from said light source onto a mask surface of said phase-shifting mask using a first optical system; condensing light which passes through said phase-shifting mask onto a resist surface of said masking material using a second optical system; and setting said mask exposure device to satisfy the following relations, λ2=λ σ2=σ m2·A2=m·A m2>m where A2 and m2 represent a numerical aperture and a magnification of said mask exposure device, λ2 and σ2 represent a wavelength and a coherence of said light projected from said light source respectively, while A and m represent a numerical aperture and a magnification of said exposure device used in a process of manufacturing a semiconductor device, λ and σ represent a wavelength and a coherence of light used therein; and said method further comprises inspecting with an enlarged pattern based on R2=(m2/m)·R; where R2 and R represent minimum resolving powers of said mask exposure device and said exposure device used in a process of manufacturing a semiconductor device, respectively.