US5479045A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor circuit device capable of reducing influence of a parasitic capacitor
Assignee: Renesas Electronics Corp
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Filing: 1995-05-26
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Granted: 1995-12-26
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Expires: 2015-05-26
Abstract
Abstract In a semiconductor circuit device comprising a differential amplifier circuit, which is formed on a semiconductor substrate and which comprises first and second input terminals, and a circuit element formed on the semiconductor substrate and connected to one of the first and the second input terminals. A dummy circuit element is formed on the semiconductor substrate so as to adjoin the circuit element for forming between the dummy circuit element and the semiconductor substrate a dummy parasitic capacitor which is equivalent to a parasitic capacitor formed between the circuit element and the semiconductor substrate. The dummy circuit element is connected to another one of the first and the second input terminals.
Inventors
- 👤 Tetsuya Narahara
- 👤 Yasushi Matsubara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 08:54
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/811; H03; H03F; H03F3/00; H03F3/45; H03F3/45071; H03F3/45479; H10D88/00; H10W; H10W44/00; H10W44/401; H10W44/601
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
129 words
A semiconductor circuit device comprising a semiconductor substrate, a differential amplifier circuit which is formed on said semiconductor substrate and which comprises first and second input terminals, and a circuit element formed on said semiconductor substrate and connected to one of said first and said second input terminals, said semiconductor circuit device having a first parasitic capacitor formed between said circuit element and said semiconductor substrate, wherein: said semiconductor circuit device further comprises a dummy circuit element formed on said semiconductor substrate so as to adjoin said circuit element for forming between said dummy circuit element and said semiconductor substrate a second parasitic capacitor which is equivalent to said first parasitic capacitor, said dummy circuit element being connected to another one of said first and said second input terminals.
Claim 2
Dependent Claim
129 words
A semiconductor circuit device comprising a semiconductor substrate, a differential amplifier circuit which is formed on said semiconductor substrate and which comprises first and second input terminals, and a circuit element formed on said semiconductor substrate and connected to one of said first and said second input terminals, said semiconductor circuit device having a first parasitic capacitor formed between said circuit element and said semiconductor substrate, wherein: said semiconductor circuit device further comprises a dummy circuit element formed on said semiconductor substrate so as to adjoin said circuit element for forming between said dummy circuit element and said semiconductor substrate a second parasitic capacitor which is equivalent to said first parasitic capacitor, said dummy circuit element being connected to another one of said first and said second input terminals.
Claim 3
Dependent Claim
51 words
A semiconductor circuit device as claimed in claim 1, wherein said circuit element has a predetermined sectional form and a predetermined planar form, said dummy circuit element having a prescribed sectional form and a prescribed planar form which are similar to said predetermined sectional form and said predetermined planar form, respectively.
Claim 4
Dependent Claim
22 words
A semiconductor circuit device as claimed in claim 1, wherein said circuit element is one of a resistor, capacitor, and a transistor.
Claim 5
Dependent Claim
24 words
A semiconductor circuit element as claimed in claim 3, said circuit device being said resistor, wherein said resistor is implemented by a diffusion layer.
Claim 6
Dependent Claim
22 words
A semiconductor circuit device as claimed in claim 2, wherein said circuit element comprises one of a resistor, capacitor, and a transistor.
Claim 7
Dependent Claim
24 words
A semiconductor circuit device as claimed in claim 5, said circuit element being said resistor, wherein said resistor is implemented by a diffusion layer.
References Cited (Backward Citations)
FR1013381A
Cited
JPS59185432A
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US4641108A
Cited
US4636738A
Cited
US4812733A
Cited
JPH02246409A
Cited
JPH0464997A
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US5406118A
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JPH05145351A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-12-25 | 1999-06-26 | 1999-12-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-12-25 | 2003-06-26 | 2003-12-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-12-25 | 2007-06-26 | 2007-12-26 | $7700.00 | Window Closed / Lapsed |