← Back to Patent Explorer
US5477808A Expired / Lapsed US ⏱️ 0.0 years remaining

Process for reducing the oxygen incorporation into a single crystal of silicon

Assignee: Siltronic AG
•
Filing: 1994-02-28
•
Granted: 1995-12-26
•
Expires: 2014-02-28
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A process and an apparatus reduces the oxygen incorporation into a single crystal of silicon which is drawn by the Czochralski method. If a molding is immersed at least temporarily in the melt between the single crystal and the crucible wall during drawing of the single crystal, the oxygen content of the single crystal is reduced compared with the oxygen content of a single crystal which has been drawn without the use of the molding.

Inventors

  • 👤 Hans Oelkrug
  • 👤 Franz Segieth

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 02:39
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B15/00; H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/60; H10P14/69; H10P14/6903

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 78 words
A process for reducing the oxygen incorporation into a single crystal of silicon, said single crystal being drawn from a melt, which is present in a quartz-lined crucible, comprising immersing a molding in the melt between the single crystal and an inner wall of the crucible and keeping the molding stationary during drawing of the single crystal; and moving the molding and the melt relative to one another, while the molding offers a high resistance to the melt.
Claim 2
Dependent Claim 78 words
A process for reducing the oxygen incorporation into a single crystal of silicon, said single crystal being drawn from a melt, which is present in a quartz-lined crucible, comprising immersing a molding in the melt between the single crystal and an inner wall of the crucible and keeping the molding stationary during drawing of the single crystal; and moving the molding and the melt relative to one another, while the molding offers a high resistance to the melt.
Claim 3
Dependent Claim 15 words
The process as claimed in claim 1, wherein the depth of immersion is 10-20 mm.

References Cited (Backward Citations)

US4497777A Cited
US4545849A Cited
US4944834A Cited
US5131974A Cited
US5270020A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1998-12-25 1999-06-26 1999-12-26 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2002-12-25 2003-06-26 2003-12-26 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2006-12-25 2007-06-26 2007-12-26 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag