Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
132 words
An amplifier circuit having an impedance matching circuit coupled between a transistor having an element impedance of Z Tr and a first transmission line having a characteristic impedance of Z 0 , said impedance matching circuit comprising: a second transmission line disposed between a terminal of said transistor and said first transmission line, said second transmission line having a characteristic impedance of Z T0 ≈(Z Tr ×Z 0 ) 1/2 and a length of a quarter wavelength; and a higher harmonic processing circuit disposed at the connection of said second transmission line to said first transmission line, said higher harmonic processing circuit having two parallel stubs each having a certain characteristic impedance and an open tip end, said two parallel stubs having length of a one-eighth wavelength and a one-twelfth wavelength, respectively.
Claim 2
Dependent Claim
132 words
An amplifier circuit having an impedance matching circuit coupled between a transistor having an element impedance of Z Tr and a first transmission line having a characteristic impedance of Z 0 , said impedance matching circuit comprising: a second transmission line disposed between a terminal of said transistor and said first transmission line, said second transmission line having a characteristic impedance of Z T0 ≈(Z Tr ×Z 0 ) 1/2 and a length of a quarter wavelength; and a higher harmonic processing circuit disposed at the connection of said second transmission line to said first transmission line, said higher harmonic processing circuit having two parallel stubs each having a certain characteristic impedance and an open tip end, said two parallel stubs having length of a one-eighth wavelength and a one-twelfth wavelength, respectively.
Claim 3
Dependent Claim
143 words
An amplifier circuit having an impedance matching circuit coupled between a transistor having an element impedance of Z Tr and a first transmission line having a characteristic impedance of Z 0 , said impedance matching circuit comprising: a second transmission line disposed between a terminal of said transistor and said first transmission line, said second transmission line having a characteristic impedance of Z T0 ≈(Z Tr ×Z 0 ) 1/2 and a length of a quarter wavelength; and a higher harmonic processing circuit disposed at the connection of said second transmission line to said first transmission line, said higher harmonic processing circuit having N parallel stubs each having an open tip end, each of said parallel stubs having a length L defined by a following equation: L=λ/4(1+m) wherein λ represents a wavelength, and m represents an integer ranging from one (1) to N.
Claim 4
Dependent Claim
143 words
An amplifier circuit having an impedance matching circuit coupled between a transistor having an element impedance of Z Tr and a first transmission line having a characteristic impedance of Z 0 , said impedance matching circuit comprising: a second transmission line disposed between a terminal of said transistor and said first transmission line, said second transmission line having a characteristic impedance of Z T0 ≈(Z Tr ×Z 0 ) 1/2 and a length of a quarter wavelength; and a higher harmonic processing circuit disposed at the connection of said second transmission line to said first transmission line, said higher harmonic processing circuit having N parallel stubs each having an open tip end, each of said parallel stubs having a length L defined by a following equation: L=λ/4(1+m) wherein λ represents a wavelength, and m represents an integer ranging from one (1) to N.
Claim 5
Dependent Claim
42 words
The amplifier circuit as recited in claim 1, wherein said transistor and said second transmission line are monolithic integrated on a semi-insulating compound semiconductor substrate, and said higher harmonic processing circuit and said first transmission line are located on a dielectric substrate.
Claim 6
Dependent Claim
42 words
The amplifier circuit as recited in claim 2, wherein said transistor and said second transmission line are monolithic integrated on a semi-insulating compound semiconductor substrate, and said higher harmonic processing circuit and said first transmission line are located on a dielectric substrate.