US5472889A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing large-sized thin film transistor liquid crystal display panel
Assignee: Electronics and Telecommunications Research Institute
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Filing: 1992-06-24
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Granted: 1995-12-05
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Expires: 2012-06-24
Abstract
Abstract A method of manufacturing a large-sized thin film transistor liquid crystal display panel in which a plurality of unit thin film transistor liquid crystal display panels are fabricated having a predetermined size on a polyimide substrate. A predetermined number of the unit thin film transistor liquid crystal display panels are arranged in a form of a matrix. The unit thin film transistor liquid crystal display panels are bonded or tiled by using an epoxy resin on a glass substrate to achieved the large-sized thin film transistor liquid crystal display panel. The interface between the unit thin film transistor liquid crystal display panels are filled up with polyimide. Gate bus lines and drain bus lines of the unit thin film transistor liquid crystal display panels arranged in the form of the matrix are electrically connected.
Inventors
- 👤 Dong G. Kim
- 👤 Chul S. Park
- 👤 Sin C. Park
- 👤 Hyung M. Park
- 👤 Gyeong L. Park
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:26
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136286; H; H10; H10D; H10D86/00; H10D86/01; H10D86/03; G02F1/1333; G02F1/13336; G02F1/13629
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
237 words
A method of manufacturing a large-sized thin film transistor liquid crystal display panel, the method comprising the steps of: preparing a plurality of large-sized thin film transistor liquid crystal display panels arranged in a form of a matrix on a glass substrate, each of the panels having a plurality of thin film transistors formed on a polyimide substrate, each of the transistors having a three-layer gate structure including a first Cr thin film formed on the polyimide substrate, a Cu thin film formed on the first Cr thin film and a second Cr thin film formed on the Cu thin film; bonding said thin film transistor liquid crystal display panels arranged thus to the glass substrate by using epoxy resin to achieve the large-sized thin film transistor liquid crystal display panel; filling up an interface between the large-sized thin film transistor liquid crystal panels with polyimide; and electrically connecting respective drain bus lines and gate bus lines of said large-sized thin film transistor liquid crystal display panels arranged in the matrix form by metallization using Cu thin film having a width of 10-30 μm, the respective drain bus lines being connected electrically to respective drain bus lines of adjacent large-sized thin film transistor panel through via holes in the polyimide substrate, and each of the via holes being filled up with Cu material to achieve electrical connection between the large-sized thin film transistor liquid crystal display panels.
Claim 2
Independent Claim
237 words
A method of manufacturing a large-sized thin film transistor liquid crystal display panel, the method comprising the steps of: preparing a plurality of large-sized thin film transistor liquid crystal display panels arranged in a form of a matrix on a glass substrate, each of the panels having a plurality of thin film transistors formed on a polyimide substrate, each of the transistors having a three-layer gate structure including a first Cr thin film formed on the polyimide substrate, a Cu thin film formed on the first Cr thin film and a second Cr thin film formed on the Cu thin film; bonding said thin film transistor liquid crystal display panels arranged thus to the glass substrate by using epoxy resin to achieve the large-sized thin film transistor liquid crystal display panel; filling up an interface between the large-sized thin film transistor liquid crystal panels with polyimide; and electrically connecting respective drain bus lines and gate bus lines of said large-sized thin film transistor liquid crystal display panels arranged in the matrix form by metallization using Cu thin film having a width of 10-30 μm, the respective drain bus lines being connected electrically to respective drain bus lines of adjacent large-sized thin film transistor panel through via holes in the polyimide substrate, and each of the via holes being filled up with Cu material to achieve electrical connection between the large-sized thin film transistor liquid crystal display panels.
Claim 3
Dependent Claim
52 words
The method according to claim 1, wherein the step of filling, up the interface between the large-sized thin film transistor liquid display panels is performed with polyimide using an ink jet method without using any mask to make the entire surface flattened, the polyimide being filled to a dimesion of 10-15 μm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-12-04 | 1999-06-05 | 1999-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-12-04 | 2003-06-05 | 2003-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-12-04 | 2007-06-05 | 2007-12-05 | $7700.00 | Window Closed / Lapsed |