Abstract Method for manufacturing a device separation region for semiconductor devices which separates regions electrically from each other stably, and allows realization of large scale integration with high reliability. When forming a device separation region 10 selectively on a substrate 1 by LOCOS method by controlling thermal oxidation, a device separation region 10 is formed to thickness t2 thinner than a predetermined thickness (FIG. 4C). A second silicon nitride layer 5 is formed onto the whole surface of the substrate 1 (FIG. 5A). A photo resist layer 8 is formed on the second silicon nitride layer 5, and the second silicon nitride layer 5 is partially removed by chemical etching (FIG. 5B). By carrying out thermal oxidation again after the etching, the device separation region 10 is formed to the predetermined thickness t (FIG. 5C). In that, device separation is accomplished stably. Also, the device formation region 15 can be formed larger than a conventional one since the occurrence of bird's beak is suppressed by controlling thermal oxidation when forming the device separation region 10. As a result, large scale integration can be realized with high reliability.
A method for manufacturing a device separation region for semiconductor devices, comprising the steps of: forming an oxide layer on a substrate and then using a first mask, growing by thermal oxidation first portions relative to second portions of said oxide layer to a first thickness, said first portions having first surfaces and said second portions having second surfaces; altering said first surfaces to become altered first surfaces which are substantially level with said second surfaces; growing further by thermal oxidation and with use of a second mask said first portions relative to said second portions of said oxide layer to a second thickness, said second thickness being thicker than said first thickness.
Claim 2
Independent Claim
113 words
A method for manufacturing a device separation region for semiconductor devices, comprising the steps of: forming an oxide layer on a substrate and then using a first mask, growing by thermal oxidation first portions relative to second portions of said oxide layer to a first thickness, said first portions having first surfaces and said second portions having second surfaces; altering said first surfaces to become altered first surfaces which are substantially level with said second surfaces; growing further by thermal oxidation and with use of a second mask said first portions relative to said second portions of said oxide layer to a second thickness, said second thickness being thicker than said first thickness.
Claim 3
Dependent Claim
36 words
A method for manufacturing a device separation region for semiconductor devices in accordance with claim 1; wherein altering of said first surfaces of the oxide layer is carried out by dry etching in the altering step.
Claim 4
Dependent Claim
36 words
A method for manufacturing a device separation region for semiconductor devices in accordance with claim 1; wherein altering of said first surfaces of the oxide layer is carried out by mechanical etching in the altering step.
Claim 5
Dependent Claim
36 words
A method for manufacturing a device separation region for semiconductor devices in accordance with claim 1; wherein altering of said first surfaces of the oxide layer is carried out by chemical etching in the altering step.