US5455182A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor process for forming channel layer with passivated covering
Assignee: Sharp Corp
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Filing: 1993-05-18
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Granted: 1995-10-03
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Expires: 2013-05-18
Abstract
Abstract A thin film transistor which includes a first insulating layer, a silicon channel layer formed on the first insulating layer, and a second insulating layer formed on the silicon channel layer, and a passivation layer formed on the first insulating layer and formed successive to and covering the side face of the channel layer between the first and second insulating layers.
Inventors
- 👤 Yoshihiro Nishimoto
- 👤 Yoshifumi Kishida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 17:07
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/021; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6706; H10D86/40; H10D86/60; Y; Y10; Y10S; Y10S438/00; Y10S438/958
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
128 words
A process for fabricating a thin film transistor layer comprising the steps of: preparing a first insulating layer, forming a semiconductor layer on the first insulating layer with silicon, forming a second insulating layer on the semiconductor layer by patterning, using the second insulating layer as a mask during an oxidation process to form a channel layer from a portion of the semiconductor layer which is positioned below the second insulating layer and oxidizing an unmasked portion of the semiconductor layer to form a passivation layer covering at least one side face of the channel layer; retaining at least a portion of the second insulation layer over the channel layer; and forming at least one of a source electrode and a drain electrode over the second insulation layer.
Claim 2
Dependent Claim
128 words
A process for fabricating a thin film transistor layer comprising the steps of: preparing a first insulating layer, forming a semiconductor layer on the first insulating layer with silicon, forming a second insulating layer on the semiconductor layer by patterning, using the second insulating layer as a mask during an oxidation process to form a channel layer from a portion of the semiconductor layer which is positioned below the second insulating layer and oxidizing an unmasked portion of the semiconductor layer to form a passivation layer covering at least one side face of the channel layer; retaining at least a portion of the second insulation layer over the channel layer; and forming at least one of a source electrode and a drain electrode over the second insulation layer.
Claim 3
Dependent Claim
12 words
A process according to claim 1, wherein the silicon is amorphous silicon.
Claim 4
Dependent Claim
12 words
A process according to claim 1, wherein the silicon is polycrystalline silicon.
Claim 5
Dependent Claim
12 words
A process according to claim 1, wherein the silicon is monocrystal silicon.
Claim 6
Dependent Claim
121 words
A process for fabricating a thin film transistor comprising the steps of: preparing a first insulating layer; forming a semiconductor layer on the first insulating layer with silicon; forming a second insulating layer on the semiconductor layer by patterning so as to cover and protect at least a portion of the semiconductor layer; using the second insulating layer as a mask during an oxidation process and oxidizing an unmasked portion of the semiconductor layer to form a passivation layer covering at least one side face of a channel layer; retaining at least a portion of the second insulation layer over the channel layer; and forming at least one of a source electrode and a drain electrode over the second insulation layer.
Claim 7
Dependent Claim
121 words
A process for fabricating a thin film transistor comprising the steps of: preparing a first insulating layer; forming a semiconductor layer on the first insulating layer with silicon; forming a second insulating layer on the semiconductor layer by patterning so as to cover and protect at least a portion of the semiconductor layer; using the second insulating layer as a mask during an oxidation process and oxidizing an unmasked portion of the semiconductor layer to form a passivation layer covering at least one side face of a channel layer; retaining at least a portion of the second insulation layer over the channel layer; and forming at least one of a source electrode and a drain electrode over the second insulation layer.
Claim 8
Dependent Claim
12 words
A process according to claim 5, wherein the silicon is amorphous silicon.
Claim 9
Dependent Claim
12 words
A process according to claim 5, wherein the silicon is polycrystalline silicon.
Claim 10
Dependent Claim
12 words
A process according to claim 5, wherein the silicon is monocrystal silicon.
Claim 11
Dependent Claim
32 words
A thin transistor according to claim 1, further comprising forming a third insulating layer on the second insulating layer and under at least one of the source electrode and the drain electrode.
Claim 12
Dependent Claim
22 words
A process according to claim 1, wherein the second insulating layer has a shape which defines the shape of the channel layer.
Claim 13
Dependent Claim
17 words
A process according to claim 1, wherein the second insulating layer is formed of SiN x .
Claim 14
Dependent Claim
14 words
A process according to claim 1, wherein the oxidation process is performed by anodization.
Claim 15
Dependent Claim
21 words
A process according to claim 1, wherein a further etching process is performed for removing a part of the passivation layer.
Claim 16
Dependent Claim
25 words
A process according to claim 1, wherein the passivation layer is continuous with the channel layer and constantly protects the channel layer during fabrication processes.
Claim 17
Dependent Claim
22 words
A process according to claim 5, wherein the second insulating layer has a shape which defines the shape of the channel layer.
Claim 18
Dependent Claim
17 words
A process according to claim 5, wherein the second insulating layer is formed of SiN x .
Claim 19
Dependent Claim
14 words
A process according to claim 5, wherein the oxidation process is performed by anodization.
Claim 20
Dependent Claim
21 words
A process according to claim 5, wherein a further etching process is performed for removing a part of the passivation layer.
Claim 21
Dependent Claim
25 words
A process according to claim 5, wherein the passivation layer is continuous with the channel layer and constantly protects the channel layer during fabrication processes.
References Cited (Backward Citations)
GB2077039A
Cited
JPS6094778A
Cited
JPS6142961A
Cited
US4814292A
Cited
JPS6390859A
Cited
US5047819A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-10-02 | 1999-04-03 | 1999-10-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-10-02 | 2003-04-03 | 2003-10-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-10-02 | 2007-04-03 | 2007-10-03 | $7700.00 | Window Closed / Lapsed |