Patent US3403834A successfully refreshed from Google Patents.
US5451291A
Expired / Lapsed
US
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Method for forming a via contact hole of a semiconductor device
Assignee: SK Hynix Inc
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Filing: 1993-03-26
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Granted: 1995-09-19
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Expires: 2013-03-26
Abstract
Abstract In the formation of a via contact hole of a semiconductor device, a polymer layer on the sidewall of a photoresist layer and via contact hole is effectively removed and the short of the via contact hole does not occur. For achieving such purpose, a wafer is cleaned in deionized water being added with CO 2 gas during the process used for forming the via contact hole, and a protecting film (Al 2 O 3 ) is formed on a metal layer. Thereafter, since the polymer layer and a part of the photoresist layer is removed, the metal layer is not eroded and the polymer layer is completely removed.
Inventors
- 👤 Sung-Kil Park
- 👤 Dong-Sauk Kim
- 👤 Yong-Hyeock Yoon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 07:22
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10P; H10P70/00; H10P70/20; H10P70/23; H10P70/234; Y; Y10; Y10S; Y10S438/00; Y10S438/963
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
149 words
A method of forming a via contact hole of a semiconductor device comprising the steps of: forming a metal layer on a wafer; forming a SiO 2 layer on said metal layer; forming a photoresist pattern after a photoresist layer is coated on said SiO 2 layer; forming a via contact hole by an etching process employing said photoresist pattern as a mask; cleaning the wafer in deionized water being added with CO 2 gas after said etching process is completed, thereby forming a protecting film on the bottom of said via contact hole; removing a polymer layer on the sidewall of said via contact hole and a part of said photoresist layer on said SiO 2 layer by using a stripper solution after the process of cleaning said wafer in said deionized water is completed; and removing the residual of said photoresist layer on said SiO 2 layer.
Claim 2
Independent Claim
149 words
A method of forming a via contact hole of a semiconductor device comprising the steps of: forming a metal layer on a wafer; forming a SiO 2 layer on said metal layer; forming a photoresist pattern after a photoresist layer is coated on said SiO 2 layer; forming a via contact hole by an etching process employing said photoresist pattern as a mask; cleaning the wafer in deionized water being added with CO 2 gas after said etching process is completed, thereby forming a protecting film on the bottom of said via contact hole; removing a polymer layer on the sidewall of said via contact hole and a part of said photoresist layer on said SiO 2 layer by using a stripper solution after the process of cleaning said wafer in said deionized water is completed; and removing the residual of said photoresist layer on said SiO 2 layer.
Claim 3
Dependent Claim
23 words
A method of forming a via contact hole of a semiconductor device claimed in claim 1, wherein said metal layer consists of Aluminum.
Claim 4
Dependent Claim
60 words
A method of forming a via contact hole of a semiconductor having a metal layer claimed in claim 1, further comprising the step of cleaning said wafer in isopropyl alcohol at room temperature for 1 to 10 minutes in order to remove said deionized water after said wafer is cleaned in said deionized water being added with CO 2 gas.
Claim 5
Dependent Claim
55 words
A method of forming a via contact hole of a semiconductor device claimed in claim 1, wherein the temperature range of said stripper solution for removing said polymer layer on the sidewall of said via contact hole and said photoresist layer on said SiO 2 layer is from 50 ° C. to 100 ° C.
Claim 6
Dependent Claim
56 words
A method of forming a via contact hole of a semiconductor device claimed in claim 1, wherein the time taken for removing said polymer layer on the sidewall of said via contact hole and a portion of said photoresist layer on said SiO 2 layer by using said stripper solution is from 5 to 30 minutes.
Claim 7
Dependent Claim
36 words
A method of forming a via contact hole of a semiconductor device claimed in claim 1, wherein said protecting film formed on the bottom of said via contact hole consists of Al 2 O 3 .
Claim 8
Independent Claim
204 words
A method of forming a via contact hole of a semiconductor device having a metal layer comprising the steps of: forming a metal layer on a wafer; forming a SiO 2 layer on said metal layer; forming a photoresist pattern after a photoresist layer is coated on said SiO 2 layer; forming a via contact hole by an etching process employing said photoresist pattern as a mask; cleaning the wafer in deionized water being added with CO 2 gas after said etching process is completed, thereby forming a protecting film on the bottom of said via contact hole; removing a polymer layer on the sidewall of said via contact hole and a part of said photoresist layer on said SiO 2 layer by using a stripper solution after the process of cleaning said wafer in said deionized water is completed; cleaning said wafer in isopropyl alcohol at room temperature for 1 to 10 minutes in order to remove said stripper solution; cleaning said wafer in said deionized water being added with 0.2 to 3 l/min. of CO 2 gas for 1 to 10 minutes; drying said wafer by a spin dryer; and removing the residual of said photoresist layer on said SiO 2 layer.
Claim 9
Independent Claim
204 words
A method of forming a via contact hole of a semiconductor device having a metal layer comprising the steps of: forming a metal layer on a wafer; forming a SiO 2 layer on said metal layer; forming a photoresist pattern after a photoresist layer is coated on said SiO 2 layer; forming a via contact hole by an etching process employing said photoresist pattern as a mask; cleaning the wafer in deionized water being added with CO 2 gas after said etching process is completed, thereby forming a protecting film on the bottom of said via contact hole; removing a polymer layer on the sidewall of said via contact hole and a part of said photoresist layer on said SiO 2 layer by using a stripper solution after the process of cleaning said wafer in said deionized water is completed; cleaning said wafer in isopropyl alcohol at room temperature for 1 to 10 minutes in order to remove said stripper solution; cleaning said wafer in said deionized water being added with 0.2 to 3 l/min. of CO 2 gas for 1 to 10 minutes; drying said wafer by a spin dryer; and removing the residual of said photoresist layer on said SiO 2 layer.
Claim 10
Dependent Claim
23 words
A method of forming a via contact hole of a semiconductor device claimed in claim 7, wherein said metal layer consists of Aluminum.
Claim 11
Dependent Claim
57 words
A method of forming a via contact hole of a semiconductor claimed in claim 7, further comprising the step of cleaning said wafer in the isopropyl alcohol at room temperature for 1 to 10 minutes in order to remove said deionized wafer after said wafer is cleaned in said deionized water being added with CO 2 gas.
Claim 12
Dependent Claim
53 words
A method of forming a via contact hole of a semiconductor device claimed in claim 7, wherein the temperature range of said stripper solution for removing said polymer layer on the sidewall of said via contact hole and said photoresist layer on said SiO 2 layer is from 50° C. to 100° C.
Claim 13
Dependent Claim
56 words
A method of forming a via contact hole of a semiconductor device claimed in claim 7, wherein the time taken for removing said polymer layer on the sidewall of said via contact hole and a portion of said photoresist layer on said SiO 2 layer by using said stripper solution is from 5 to 30 minutes.
Claim 14
Dependent Claim
36 words
A method of forming a via contact hole of a semiconductor device claimed in claim 7, wherein said protecting film formed on the bottom of said via contact hole consists of Al 2 O 3 .
Claim 15
Independent Claim
222 words
A method of forming a via contact hole of a semiconductor device comprising the steps of: forming a metal layer on a wafer; forming a SiO 2 layer on said metal layer; forming a photoresist pattern after a photoresist layer is coated on said SiO 2 layer; forming a via contact hole by an etching process employing said photoresist pattern as a mask; cleaning the wafer in deionized water being added with CO 2 gas after said etching process is completed, thereby forming a protecting film on the bottom of said via contact hole; cleaning said wafer in isopropyl alcohol at room temperature for 1 to 10 minutes in order to remove said deionized water; removing a polymer layer on the sidewall of said via contact hole and a part of said photoresist layer on said SiO 2 layer by using a stripper solution after the process of cleaning said wafer in said deionized water is completed; cleaning said wafer in said isopropyl alcohol at room temperature for 1 to 10 minutes in order to remove said stripper solution; cleaning said wafer in said deionized water being added with 0.2 to 3 l/min. of CO 2 gas for 1 to 10 minutes; drying said wafer by a spin dryer; and removing the residual of said photoresist layer on said SiO 2 layer.
Claim 16
Independent Claim
222 words
A method of forming a via contact hole of a semiconductor device comprising the steps of: forming a metal layer on a wafer; forming a SiO 2 layer on said metal layer; forming a photoresist pattern after a photoresist layer is coated on said SiO 2 layer; forming a via contact hole by an etching process employing said photoresist pattern as a mask; cleaning the wafer in deionized water being added with CO 2 gas after said etching process is completed, thereby forming a protecting film on the bottom of said via contact hole; cleaning said wafer in isopropyl alcohol at room temperature for 1 to 10 minutes in order to remove said deionized water; removing a polymer layer on the sidewall of said via contact hole and a part of said photoresist layer on said SiO 2 layer by using a stripper solution after the process of cleaning said wafer in said deionized water is completed; cleaning said wafer in said isopropyl alcohol at room temperature for 1 to 10 minutes in order to remove said stripper solution; cleaning said wafer in said deionized water being added with 0.2 to 3 l/min. of CO 2 gas for 1 to 10 minutes; drying said wafer by a spin dryer; and removing the residual of said photoresist layer on said SiO 2 layer.
Claim 17
Dependent Claim
27 words
A method of forming a via contact hole of a semiconductor device having a metal layer claimed in claim 13, wherein said metal layer consists of Aluminum.
Claim 18
Dependent Claim
61 words
A method of forming a via contact hole of a semiconductor having a metal layer claimed in claim 13, further comprising the step of cleaning said wafer in the isopropyl alcohol at room temperature for 1 to 10 minutes in order to remove said deionized water after said wafer is cleaned in said deionized water being added with CO 2 gas.
Claim 19
Dependent Claim
57 words
A method of forming a via contact hole of a semiconductor device having a metal layer claimed in claim 13, wherein the temperature range of said stripper solution for removing said polymer layer on the sidewall of said via contact hole and said photoresist layer on said SiO 2 layer is from 50° C. to 100° C.
Claim 20
Dependent Claim
60 words
A method of forming a via contact hole of a semiconductor device having a metal layer claimed in claim 13, wherein the time taken for removing said polymer layer on the sidewall of said via contact hole and a portion of said photoresist layer on said SiO 2 layer by using said stripper solution is from 5 to 30 minutes.
Claim 21
Dependent Claim
36 words
A method of forming a via contact hole of a semiconductor device claimed in claim 13, wherein said protecting film formed on the bottom of said via contact hole consists of Al 2 O 3 .
Claim 22
Independent Claim
162 words
A method of forming a via contact hole of a semiconductor device comprising the steps of: forming a metal layer on a wafer; forming a SiO 2 layer on said metal layer; forming a photoresist pattern after a photoresist layer is coated on said SiO 2 layer; forming a via contact hole by an etching process employing said photoresist pattern as a mask; forming a protective film of oxide of metal of said metal layer on the bottom of said via contact hole by cleaning the wafer with said via contact hole in deionized water being added with CO 2 gas after said etching process is completed; removing a polymer layer on the sidewall of said via contact hole and a part of said photoresist layer on said SiO 2 layer by using a stripper solution after the process of cleaning said wafer in said deionized water is completed; and removing the residual of said photoresist layer on said SiO 2 layer.
Claim 23
Independent Claim
162 words
A method of forming a via contact hole of a semiconductor device comprising the steps of: forming a metal layer on a wafer; forming a SiO 2 layer on said metal layer; forming a photoresist pattern after a photoresist layer is coated on said SiO 2 layer; forming a via contact hole by an etching process employing said photoresist pattern as a mask; forming a protective film of oxide of metal of said metal layer on the bottom of said via contact hole by cleaning the wafer with said via contact hole in deionized water being added with CO 2 gas after said etching process is completed; removing a polymer layer on the sidewall of said via contact hole and a part of said photoresist layer on said SiO 2 layer by using a stripper solution after the process of cleaning said wafer in said deionized water is completed; and removing the residual of said photoresist layer on said SiO 2 layer.
Claim 24
Dependent Claim
28 words
A method of forming a via contact hole of a semiconductor device claimed in claim 19, wherein the oxide of the metal is Al 2 O 3 .
References Cited (Backward Citations)
JPH03295257A
Cited
US5175124A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-09-18 | 1999-03-20 | 1999-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-09-18 | 2003-03-20 | 2003-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-09-18 | 2007-03-20 | 2007-09-19 | $7700.00 | Window Closed / Lapsed |