US5449935A
Expired / Lapsed
US
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Semiconductor device including non-volatile memories
Assignee: Rohm Co Ltd
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Filing: 1994-07-05
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Granted: 1995-09-12
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Expires: 2014-07-05
Abstract
Abstract The present invention provides a nonvolatile semiconductor memory that comprises one-transistor cells and yet is able to read information from a selected memory cell without mistake. The memory comprise switch elements (3A,3B,3C,3D) which are arrayed in rows and columns, each of the switch element having a drain and a source, and a control electrode, first lines each (48) of which includes a main line (48H) and subsidiary lines (48A,48B) diverging from the main line, each of the subsidiary lines connecting to the drain of one of the switch elements (3A,3B) arrayed in a row, second lines each (44) of which includes a main line (44H) and subsidiary lines (44A,44C) diverging from the main line, each of the subsidiary lines connecting to the source of one of the switch elements (3A,3C) arrayed in a column, word lines each (52) of which connects to all of the control electrodes of the switch elements (3A,3C) arrayed in a column, and a diode (27 ) interposed either in the subsidiary line connecting to the drain of each of the switch elements or in the subsidiary line connecting to the source of the same switch element.
Inventors
- 👤 Takashi Nakamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:20
CPC Classifications
H; H10; H10B; H10B69/00; H10D; H10D30/00; H10D30/60; H10D30/701
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
78 words
A semiconductor device including non-volatile memories comprising: a substrate of P-type semiconductor; a first and a second region of N-type semiconductor formed in the surface of the substrate and deeming a channel region between the first region and the second region; a ferroelectric layer spanning the channel region; a control electrode on the ferroelectric layer and spanning the channel region; and a third region of P-type semiconductor within the surface of the first region, which surface is exposed.
Claim 2
Dependent Claim
78 words
A semiconductor device including non-volatile memories comprising: a substrate of P-type semiconductor; a first and a second region of N-type semiconductor formed in the surface of the substrate and deeming a channel region between the first region and the second region; a ferroelectric layer spanning the channel region; a control electrode on the ferroelectric layer and spanning the channel region; and a third region of P-type semiconductor within the surface of the first region, which surface is exposed.
Claim 3
Dependent Claim
24 words
A semiconductor device including non-volatile memories according to claim 1, wherein the first region is a source and the second region is a drain.
Claim 4
Dependent Claim
18 words
A semiconductor device including non-volatile memories according to claim 1, wherein the control electrode is made of platinum.
Claim 5
Dependent Claim
20 words
A semiconductor device including non-volatile memories according to claim 1, wherein the ferroelectric layer is made of PbTiO 3 .
Claim 6
Dependent Claim
196 words
A semiconductor device including non-volatile memories comprising: non-volatile memory elements which are arrayed in rows and columns, each of said non-volatile memory elements having a drain, a source, and a control electrode, first lines, each of which includes a first main line and first subsidiary lines stemming from said first main line, each of first subsidiary lines connecting to the drains of said non-volatile memory elements arrayed in a one of said rows, second lines, each of which includes a second main line and second subsidiary lines stemming from said second main line, each of said second subsidiary lines connecting to said sources of said non-volatile memory elements arrayed in a one of said columns, word lines each of which connects to all of said control electrodes of said non-volatile memory elements arrayed in a column, and; each of said non-volatile memory elements having a diode arranged in series connection between said one of said first subsidiary lines connecting to said drain and said drain and said one of said second subsidiary lines connecting to said source and said source, such that a flow of current through adjacent ones of the non-volatile memory elements is prevented.
Claim 7
Dependent Claim
196 words
A semiconductor device including non-volatile memories comprising: non-volatile memory elements which are arrayed in rows and columns, each of said non-volatile memory elements having a drain, a source, and a control electrode, first lines, each of which includes a first main line and first subsidiary lines stemming from said first main line, each of first subsidiary lines connecting to the drains of said non-volatile memory elements arrayed in a one of said rows, second lines, each of which includes a second main line and second subsidiary lines stemming from said second main line, each of said second subsidiary lines connecting to said sources of said non-volatile memory elements arrayed in a one of said columns, word lines each of which connects to all of said control electrodes of said non-volatile memory elements arrayed in a column, and; each of said non-volatile memory elements having a diode arranged in series connection between said one of said first subsidiary lines connecting to said drain and said drain and said one of said second subsidiary lines connecting to said source and said source, such that a flow of current through adjacent ones of the non-volatile memory elements is prevented.
Claim 8
Dependent Claim
43 words
A semiconductor device including non-volatile memories according to claim 5, further comprising: bit lines; each of the non-volatile memory elements having a well; and, each bit line connecting to the wells of the non-volatile memory elements arrayed in a one of the rows.
Claim 9
Dependent Claim
20 words
A semiconductor device including non-volatile memories according to claim 5, wherein the non-volatile memory elements are ferroelectric memory storage cells.
Claim 10
Dependent Claim
20 words
A semiconductor device including non-volatile memories according to claim 5, wherein said non-volatile memory elements are NMOS-type memory storage cells.
Claim 11
Dependent Claim
33 words
A semiconductor device including non-volatile memories according to claim 5, wherein said diode is composed of a junction between a region of one conductivity type and a region of said opposite conductivity type.
Claim 12
Dependent Claim
41 words
A semiconductor device including non-volatile memories according to claim 5, wherein the diode comprises an anode and a cathode, the diode being connected in series between the source and the second subsidiary line, and the cathode being connected to the source.
References Cited (Backward Citations)
US5032891A
Cited
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