US5448208A
Expired / Lapsed
US
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Semiconductor integrated circuit having an equal propagation delay
Assignee: NEC Corp
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Filing: 1994-06-28
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Granted: 1995-09-05
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Expires: 2014-06-28
Abstract
Abstract A semiconductor integrated circuit has a parallel conductor transmission line including a plurality of signal paths branching at a node. The signal paths have phase compensation section for obtaining a phase constant of the transfer constant thereof, the phase constant being inversely proportional to the length of the signal paths. The phase compensation section is implemented by covering a microstrip line by a insulator layer having a high dielectric constant or implemented by a second ground conductor disposed opposite to the microstrip conductor with a thin insulator layer of a high dielectric constant. The integrated circuit comprises a plurality of square gate blocks having a plurality of logic gates arranged in an array. A signal source node is connected via respective input signal nodes of the gate blocks to the logic gates in the gate blocks through the respective signal paths having the phase compensation section.
Inventors
- 👤 Kazuhiko Honjo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 06:13
CPC Classifications
H; H01; H01P; H01P5/00; H01P5/12; H10; H10D; H10D89/00
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
159 words
A semiconductor integrated circuit, comprising a semi-insulating substrate, a parallel conductor transmission line including a plurality of signal paths overlying said semi-insulating substrate, said plurality of signal paths including a first signal path and a second signal path, said first signal path having a first length and a first phase constant at a certain frequency, said second signal path having a second length shorter than said first length and a second phase constant at said certain frequency larger than said first phase constant, wherein said semi-insulating substrate has a first surface and a second surface opposed to said first surface, and wherein said parallel conductor transmission line includes a first conductor layer formed on said first surface, a second conductor layer formed on said second surface, said second conductor layer implementing said plurality of signal paths, and a first insulator strip layer and a second insulator strip layer covering said first signal path and said second signal path, respectively.
Claim 2
Dependent Claim
159 words
A semiconductor integrated circuit, comprising a semi-insulating substrate, a parallel conductor transmission line including a plurality of signal paths overlying said semi-insulating substrate, said plurality of signal paths including a first signal path and a second signal path, said first signal path having a first length and a first phase constant at a certain frequency, said second signal path having a second length shorter than said first length and a second phase constant at said certain frequency larger than said first phase constant, wherein said semi-insulating substrate has a first surface and a second surface opposed to said first surface, and wherein said parallel conductor transmission line includes a first conductor layer formed on said first surface, a second conductor layer formed on said second surface, said second conductor layer implementing said plurality of signal paths, and a first insulator strip layer and a second insulator strip layer covering said first signal path and said second signal path, respectively.
Claim 3
Dependent Claim
32 words
A semiconductor integrated circuit as defined in claim 1, wherein said first insulator strip layer is different from said second insulator strip layer in at least one of width and thickness thereof.
Claim 4
Dependent Claim
35 words
A semiconductor integrated circuit as defined in claim 2, wherein a first phase delay produced by said first signal path is substantially the same as a second phase delay produced by said second signal path.
Claim 5
Dependent Claim
24 words
A semiconductor integrated circuit as defined in claim 3, wherein said first signal path and said second signal path branch at a common node.
Claim 6
Dependent Claim
29 words
A semiconductor integrated circuit as defined in claim 3, wherein said first signal path and said second signal path are connected to respective outputs of a common signal source.
Claim 7
Dependent Claim
165 words
A semiconductor integrated circuit comprising a semi-insulating substrate, a parallel conductor transmission line including a plurality of signal paths overlying said semi-insulating substrate, said plurality of signal paths including a first signal path and a second signal path, said first signal path having a first length and a first phase constant at a certain frequency, said second signal path having a second length shorter than said first length and a second phase constant at said certain frequency larger than said first phase constant, wherein said parallel conductor transmission line is implemented by a co-planar waveguide including a pair of parallel conductors formed on said substrate and implementing said plurality of signal paths and a plurality of insulator strip layers each covering a portion of said pair of conductors along one of said plurality of signal paths, said plurality of insulator strip layers including a first insulator strip layer and a second insulator strip layer covering said first signal path and said second signal path, respectively.
Claim 8
Dependent Claim
165 words
A semiconductor integrated circuit comprising a semi-insulating substrate, a parallel conductor transmission line including a plurality of signal paths overlying said semi-insulating substrate, said plurality of signal paths including a first signal path and a second signal path, said first signal path having a first length and a first phase constant at a certain frequency, said second signal path having a second length shorter than said first length and a second phase constant at said certain frequency larger than said first phase constant, wherein said parallel conductor transmission line is implemented by a co-planar waveguide including a pair of parallel conductors formed on said substrate and implementing said plurality of signal paths and a plurality of insulator strip layers each covering a portion of said pair of conductors along one of said plurality of signal paths, said plurality of insulator strip layers including a first insulator strip layer and a second insulator strip layer covering said first signal path and said second signal path, respectively.
Claim 9
Dependent Claim
32 words
A semiconductor integrated circuit as defined in claim 6, wherein said first insulator strip layer is different from said second insulator strip layer in at least one of width and thickness thereof.
Claim 10
Dependent Claim
35 words
A semiconductor integrated circuit as defined in claim 7, wherein a first phase delay produced by said first signal path is substantially the same as a second phase delay produced by said second signal path.
Claim 11
Dependent Claim
23 words
A semiconductor integrated circuit as defined in claim 8, wherein said first signal path and said second signal path branch at a node.
Claim 12
Dependent Claim
28 words
A semiconductor integrated circuit as defined in claim 8, wherein said first signal path and said second signal path are connected to respective outputs of a signal source.
Claim 13
Dependent Claim
133 words
A semiconductor integrated circuit comprising a semi-insulating substrate, a parallel conductor transmission line including a plurality of signal paths overlying said semi-insulating substrate, said plurality of signal paths including a first signal path and a second signal path, said first signal path having a first length and a first phase constant at a certain frequency, said second signal path having a second length shorter than said first length and a second phase constant at said certain frequency larger than said first phase constant, wherein said parallel conductor transmission line is implemented by a ground conductor formed on said semi-insulating substrate, an insulator layer formed on said ground conductor, and a microstrip conductor formed on said insulator layer and including a plurality of portions each corresponding to one of said plurality of signal paths.
Claim 14
Dependent Claim
133 words
A semiconductor integrated circuit comprising a semi-insulating substrate, a parallel conductor transmission line including a plurality of signal paths overlying said semi-insulating substrate, said plurality of signal paths including a first signal path and a second signal path, said first signal path having a first length and a first phase constant at a certain frequency, said second signal path having a second length shorter than said first length and a second phase constant at said certain frequency larger than said first phase constant, wherein said parallel conductor transmission line is implemented by a ground conductor formed on said semi-insulating substrate, an insulator layer formed on said ground conductor, and a microstrip conductor formed on said insulator layer and including a plurality of portions each corresponding to one of said plurality of signal paths.
Claim 15
Dependent Claim
26 words
A semiconductor integrated circuit as defined in claim 11, wherein said insulator layer has a dielectric constant higher than the dielectric constant of said semi-insulating substrate.
Claim 16
Dependent Claim
34 words
A semiconductor integrated circuit as defined in claim 12, wherein sa phase delay produced by said first signal path is substantially the same as a second phase delay produced by said second signal path.
Claim 17
Dependent Claim
23 words
A semiconductor integrated circuit as defined in claim 13, wherein said first signal path and said second signal path branch at a node.
Claim 18
Dependent Claim
28 words
A semiconductor integrated circuit as defined in claim 13, wherein said first signal path and said second signal path are connected to respective outputs of a signal source.
References Cited (Backward Citations)
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