Semiconductor device including a first chip having an active element and a second chip having a passive element

Claim 2

A semiconductor device comprising: a first chip having a first semiconductor substrate including a first surface and an opposite second surface, at least one active element without passive elements fabricated on said first surface, a second chip having a second semiconductor substrate including a third surface which has at least one passive element without active elements, and wherein the first chip is mounted on a grounding electrode formed on the third surface of the second semiconductor substrate so that the second surface of the first semiconductor substrate makes direct contact to the grounding electrode, and the active element of the first chip is coupled to a reverse surface electrode, which is electrically connected to the grounding electrode, through a via-hole conductor provided in the semiconductor substrate of the first chip, and at least the active element of the first chip is electrically connected by a bonding conductor to the passive element of the second chip.

Claim 3

A semiconductor device according to claim 1, wherein the grounding electrode and a second reverse surface electrode formed on a reverse surface of the semiconductor substrate of the second chip are electrically connected through a via-hole conductor provided in the semiconductor substrate of the second chip.

Claim 4

A semiconductor device comprising: at least one first chip having a first GaAs substrate including a first surface and an opposing second surface, at least one transistor is fabricated on said first surface containing at least a source electrode, a second chip having a second GaAs substrate including a third surface on which at least one inductor, at least one capacitor and at least one grounding electrode are formed, said first chip being mounted on said second chip so that the second surface of said first GaAs substrate makes direct contact to the third surface of said second GaAs substrate, said transistor being electrically connected by a bonding conductor to at least one of said inductor and said capacitor, and said source electrode of said transistor being electrically connected to said grounding electrode of said second chip through a via-hole conductor provided in the GaAs substrate of said first chip.

Claim 5

A semiconductor device comprising: at least one first chip having a first GaAs substrate including a first surface and an opposing second surface, at least one transistor is fabricated on said first surface containing at least a source electrode, a second chip having a second GaAs substrate including a third surface on which at least one inductor, at least one capacitor and at least one grounding electrode are formed, said first chip being mounted on said second chip so that the second surface of said first GaAs substrate makes direct contact to the third surface of said second GaAs substrate, said transistor being electrically connected by a bonding conductor to at least one of said inductor and said capacitor, and said source electrode of said transistor being electrically connected to said grounding electrode of said second chip through a via-hole conductor provided in the GaAs substrate of said first chip.

Claim 6

A semiconductor device according to claim 3, wherein the grounding electrode formed on the surface of the second chip is electrically connected to a reverse surface electrode formed on a reverse surface of the second chip through a via-hole conductor, provided in the GaAs substrate of said second chip.

Claim 7

A semiconductor device comprising: a first chip having a first semiconductor substrate including a first surface and an opposite second surface, at least one active element without passive elements fabricated on said first surface, a second chip having a second semiconductor substrate including a third surface which has at least one passive element without active elements, and a grounding electrode is formed on the third surface of the second semiconductor substrate, and wherein the first chip is mounted on the second chip so that the second surface of the first semiconductor substrate makes direct contact to the third surface of the second semiconductor substrate, and the active element of the first chip is coupled to a reverse surface electrode, which is electrically connected to the grounding electrode, through a via-hole conductor provided in the semiconductor substrate of the first chip, and at least the active element of the first chip is electrically connected by a bonding conductor to the passive element of the second chip.

Claim 8

A semiconductor device comprising: a first chip having a first semiconductor substrate including a first surface and an opposite second surface, at least one active element without passive elements fabricated on said first surface, a second chip having a second semiconductor substrate including a third surface which has at least one passive element without active elements, and a grounding electrode is formed on the third surface of the second semiconductor substrate, and wherein the first chip is mounted on the second chip so that the second surface of the first semiconductor substrate makes direct contact to the third surface of the second semiconductor substrate, and the active element of the first chip is coupled to a reverse surface electrode, which is electrically connected to the grounding electrode, through a via-hole conductor provided in the semiconductor substrate of the first chip, and at least the active element of the first chip is electrically connected by a bonding conductor to the passive element of the second chip.

Claim 9

A semiconductor device according to claim 5, wherein the grounding electrode and a second reverse surface electrode formed on a reverse surface of the semiconductor substrate of the second chip are electrically connected through a via-hole conductor provided in the semiconductor substrate of the second chip.