Apparatus for manufacturing semiconductor and method of manufacturing semiconductor

Claim 1

An apparatus for manufacturing semiconductor, in which a predetermined treatment is performed to a major treatment surface of a semiconductor substrate by feeding reactive gas, comprising: (a) a reaction container for defining therein a reaction chamber which is capable of containing said semiconductor substrate, and further defining a reactive gas inlet hole which opens toward said reaction chamber to feed said reactive gas into said reaction chamber, an evacuation hole which opens toward said reaction chamber to evacuate gas used for reaction from said reaction chamber; (b) substrate holding means fixed in said reaction container, for defining a substrate holding surface to hold said semiconductor substrate within said reaction chamber by getting in contact with a reverse major surface of said major treatment surface of said semiconductor substrate, a pocket surrounded by said substrate holding surface to hold said semiconductor substrate by suction force, and also defining an inert gas jetting hole in a region surrounding said pocket to jet inert gas out; (c) reactive gas feeding means conducting to said reactive gas inlet hole, for feeding said reactive gas to said reactive gas inlet hole; (d) pressure reducing means conducting to said pocket, for reducing pressure in said pocket; (e) inert gas feeding means conducting to said inert gas jetting hole, for feeding said inert gas to said inert gas jetting hole; and (f) heating means fixedly coupled to said substrate holding means, for heating said substrate holding means, wherein said substrate holding means and said heating means define respective contact faces and are in contact with each other on said contact faces, wherein said substrate holding means defines therein a first inert gas jetting passage for connecting said inert gas feeding means and said inert gas jetting hole, and wherein a second inert gas jetting passage conducting to said first inert gas jetting passage for connecting said inert gas feeding means and said inert gas jetting hole is provided between said contact faces.

Claim 2

An apparatus for manufacturing semiconductor, in which a predetermined treatment is performed to a major treatment surface of a semiconductor substrate by feeding reactive gas, comprising: (a) a reaction container for defining therein a reaction chamber which is capable of containing said semiconductor substrate, and further defining a reactive gas inlet hole which opens toward said reaction chamber to feed said reactive gas into said reaction chamber, an evacuation hole which opens toward said reaction chamber to evacuate gas used for reaction from said reaction chamber; (b) substrate holding means fixed in said reaction container, for defining a substrate holding surface to hold said semiconductor substrate within said reaction chamber by getting in contact with a reverse major surface of said major treatment surface of said semiconductor substrate, a pocket surrounded by said substrate holding surface to hold said semiconductor substrate by suction force, and also defining an inert gas jetting hole in a region surrounding said pocket to jet inert gas out; (c) reactive gas feeding means conducting to said reactive gas inlet hole, for feeding said reactive gas to said reactive gas inlet hole; (d) pressure reducing means conducting to said pocket, for reducing pressure in said pocket; (e) inert gas feeding means conducting to said inert gas jetting hole, for feeding said inert gas to said inert gas jetting hole; and (f) heating means fixedly coupled to said substrate holding means, for heating said substrate holding means, wherein said substrate holding means and said heating means define respective contact faces and are in contact with each other on said contact faces, wherein said substrate holding means defines therein a first inert gas jetting passage for connecting said inert gas feeding means and said inert gas jetting hole, and wherein a second inert gas jetting passage conducting to said first inert gas jetting passage for connecting said inert gas feeding means and said inert gas jetting hole is provided between said contact faces.