Abstract A switching power circuit with a redundant structure comprises a back-current obstructing element provided at an output side of the switching power circuit, error amplifiers provided at an output side (the load side) and internal side (the switching power circuit side) of the back-current obstructing element, respectively, to control both the voltages at the output side and inside of the back-current obstructing element, a field effect transistor used as the back-current obstructing element so that a source electrode and a drain electrode are connected in a forward direction with respect to an output current, and a voltage detecting circuit for detecting an output voltage of the error amplifier for inside of the switching circuit to produce an output signal on the basis of which a gate voltage of the field effect transistor is controlled.
A switching power circuit with a redundant structure, comprising: a back-current obstructing element provided at an output side of said switching power circuit; a primary error amplifier connected to an output side of said back-current obstructing element to control a voltage at an output side of said back-current obstructing element; a secondary error amplifier connected to an internal side of said back-current obstructing element to control a voltage at an internal side of said back-current obstructing element; a field effect transistor being used as said back-current obstructing element so that a source electrode and a drain electrode are connected in a forward direction with respect to an output current; and a voltage detecting circuit for detecting an output voltage of said secondary error amplifier to produce an output signal for controlling a gate voltage of said field effect transistor.
Claim 2
Dependent Claim
139 words
A switching power circuit with a redundant structure, comprising: a back-current obstructing element provided at an output side of said switching power circuit; a primary error amplifier connected to an output side of said back-current obstructing element to control a voltage at an output side of said back-current obstructing element; a secondary error amplifier connected to an internal side of said back-current obstructing element to control a voltage at an internal side of said back-current obstructing element; a field effect transistor being used as said back-current obstructing element so that a source electrode and a drain electrode are connected in a forward direction with respect to an output current; and a voltage detecting circuit for detecting an output voltage of said secondary error amplifier to produce an output signal for controlling a gate voltage of said field effect transistor.
Claim 3
Dependent Claim
72 words
A switching power circuit with a redundant structure as claimed in claim 1, further comprising a mixture circuit for mixing the output signal of said primary error amplifier with the output signal of said secondary error amplifier; and a voltage control circuit having a pulse width modulation control circuit which inputs the output signal of said mixture circuit and outputs a signal on the basis of which a switching transistor is controlled.