US5440132A
Expired / Lapsed
US
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Systems and methods for controlling the temperature and uniformity of a wafer during a SIMOX implantation process
Assignee: Texas Instruments Inc
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Filing: 1994-03-30
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Granted: 1995-08-08
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Expires: 2014-03-30
Abstract
Abstract An implantation system (10) is provided that comprises a rotating drum (12) which holds a wafer chuck (28) which in turn holds a semiconductor wafer (26). The wafer chuck (28) rotates during the implantation of oxygen from an oxygen beam (24) created by a beam generator (22). The wafer chuck (28) is rotated via shaft (30) from a motor (32). The wafer chuck (28) also holds a thermal reflector (36) which allows for control of the temperature of the wafer during the implantation process.
Inventors
- 👤 Keith A. Joyner
- 👤 James B. Hollingsworth
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:23
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/70; H10P72/76; H10P72/7604; H10P72/7618; H10P72/7621; H10P72/7626; H01; H01J; H01J2237/00; H01J2237/20; H01J2237/2001; H01J2237/30; H01J2237/317; H01J2237/31701
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
111 words
A system for implanting ions in a semiconductor wafer, comprising: a beam generator operable to generate a beam of ions; a rotating drum having a rim and a base; a wafer chuck disposed proximate the rim of the drum and rotatably fixed with respect to the rim such that the wafer chuck passes through the beam generated by the beam generator as the drum rotates; a wafer chuck rotation mechanism coupled to the wafer chuck and operable to turn the wafer chuck during the implantation process; and a thermal reflector disposed proximate the wafer chuck and operable to reflect thermal energy emitted by a semiconductor wafer disposed in the wafer chuck.
Claim 2
Independent Claim
111 words
A system for implanting ions in a semiconductor wafer, comprising: a beam generator operable to generate a beam of ions; a rotating drum having a rim and a base; a wafer chuck disposed proximate the rim of the drum and rotatably fixed with respect to the rim such that the wafer chuck passes through the beam generated by the beam generator as the drum rotates; a wafer chuck rotation mechanism coupled to the wafer chuck and operable to turn the wafer chuck during the implantation process; and a thermal reflector disposed proximate the wafer chuck and operable to reflect thermal energy emitted by a semiconductor wafer disposed in the wafer chuck.
Claim 3
Dependent Claim
12 words
The implantation system of claim 1 wherein the thermal reflector comprises aluminum.
Claim 4
Dependent Claim
12 words
The implantation system of claim 1 wherein the thermal reflector comprises silicon.
Claim 5
Dependent Claim
12 words
The implantation system of claim 1 wherein the thermal reflector comprises germanium.
Claim 6
Dependent Claim
12 words
The implantation system of claim 1 wherein the thermal reflector comprises steel.
Claim 7
Dependent Claim
12 words
The implantation system of claim 1 wherein the thermal reflector comprises tungsten.
Claim 8
Dependent Claim
12 words
The implantation system of claim 1 wherein the thermal reflector comprises carbon.
Claim 9
Dependent Claim
12 words
The implantation system of claim 1 wherein the thermal reflector comprises mirror.
Claim 10
Dependent Claim
24 words
The implantation system of claim 1 wherein the wafer chuck rotator comprises a motor and a shaft coupling the motor to the wafer chuck.
Claim 11
Dependent Claim
17 words
The implantation system of claim 9 and further comprising bearings disposed between the shaft and the rim.
Claim 12
Dependent Claim
30 words
The implantation system of claim 1 and further comprising a motor coupled to the drum and operable to rotate the drum relative to the ion beam during the implantation process.
Claim 13
Dependent Claim
37 words
The implantation system of claim 1 wherein the wafer chuck rotation mechanism comprises a system operable to rotate a wafer disposed in the wafer chuck in discreet intervals responsive to the rotation of the rim and drum.
Claim 14
Dependent Claim
31 words
The implantation system of claim 1 wherein the wafer chuck rotation mechanism comprises a spring driven clock winding system operable to unwind and rotate the wafer chuck during the implantation process.
Claim 15
Independent Claim
121 words
A system for performing a SIMOX implantation process on a semiconductor substrate to create a silicon-on-insulator substrate comprising: a rotating drum; an oxygen beam generator fixed with respect to the rotating drum and operable to generate a beam of high energy oxygen ions; a plurality of wafer chucks disposed on the periphery of the rotating drum such that the wafer chucks periodically pass through the beam generated by the beam generator; a motor coupled to the drum and operable to rotate the drum; and a thermal reflector disposed in each of the plurality of wafer chucks and operable to reflect thermal energy emitted by a semiconductor substrate placed in each of the thermal chucks back to each of the semiconductor substrates.
Claim 16
Independent Claim
121 words
A system for performing a SIMOX implantation process on a semiconductor substrate to create a silicon-on-insulator substrate comprising: a rotating drum; an oxygen beam generator fixed with respect to the rotating drum and operable to generate a beam of high energy oxygen ions; a plurality of wafer chucks disposed on the periphery of the rotating drum such that the wafer chucks periodically pass through the beam generated by the beam generator; a motor coupled to the drum and operable to rotate the drum; and a thermal reflector disposed in each of the plurality of wafer chucks and operable to reflect thermal energy emitted by a semiconductor substrate placed in each of the thermal chucks back to each of the semiconductor substrates.
Claim 17
Dependent Claim
31 words
The system of claim 14 and further comprising a wafer chuck rotation mechanism coupled to each of the wafer chucks and operable to rotate the wafer chucks during the implantation process.
Claim 18
Dependent Claim
11 words
The system of claim 14 wherein the thermal reflector comprises aluminum.
Claim 19
Dependent Claim
111 words
An ion implantation process for forming a silicon-on-insulator substrate comprising the steps of: generating a beam of oxygen ions; disposing a plurality of semiconductor substrates on wafer chucks; disposing the wafer chucks around the periphery of a drum; rotating the drum such that the wafer chucks periodically pass through the oxygen beam; rotating the wafer chucks with respect to the drum such that the position of the substrate with respect to the beam changes each time a particular semiconductor substrate passes through the beam as the drum rotates; and reflecting thermal energy emitted by a semiconductor substrate during the implantation process back to the semiconductor substrate using a thermal reflector material.
Claim 20
Dependent Claim
111 words
An ion implantation process for forming a silicon-on-insulator substrate comprising the steps of: generating a beam of oxygen ions; disposing a plurality of semiconductor substrates on wafer chucks; disposing the wafer chucks around the periphery of a drum; rotating the drum such that the wafer chucks periodically pass through the oxygen beam; rotating the wafer chucks with respect to the drum such that the position of the substrate with respect to the beam changes each time a particular semiconductor substrate passes through the beam as the drum rotates; and reflecting thermal energy emitted by a semiconductor substrate during the implantation process back to the semiconductor substrate using a thermal reflector material.
Claim 21
Dependent Claim
25 words
The method of claim 17 wherein the step of reflecting thermal energy comprises the step of reflecting thermal energy using a thermal reflector comprising aluminum.
Claim 22
Dependent Claim
49 words
The method of claim 17 wherein the step of reflecting thermal energy comprises the step of reflecting thermal energy using a thermal reflector made of a thermally reflecting material selected from the group consisting of silicon, germanium, stainless steel, tungsten, carbon, gallium arsenide and glass with a mirror finish.
Claim 23
Dependent Claim
25 words
The method of claim 17 additionally including the step of selecting the polish finish of the thermal reflector to provide a different thermal reflectivity therefor.
References Cited (Backward Citations)
US4831270A
Cited
US5084624A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-08-07 | 1999-02-06 | 1999-08-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-08-07 | 2003-02-06 | 2003-08-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-08-07 | 2007-02-06 | 2007-08-08 | $7700.00 | Window Closed / Lapsed |