US5438215A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Power MOSFET
Assignee: Infineon Technologies AG
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Filing: 1994-03-25
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Granted: 1995-08-01
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Expires: 2014-03-25
Abstract
Abstract A power MOSFET includes a semiconductor body having first and second surfaces. An inner zone of a first conduction type has a given dopant concentration. At least one base zone of a second conduction type is adjacent the inner zone and the first surface. At least one source zone is embedded in the at least one base zone. At least one drain zone is adjacent one of the surfaces. Additional zones of the second conduction type are disposed in the inner zone inside a space charge zone developing when a blocking voltage is present. At least one additional zone of the first conduction type is disposed between the additional zones of the second conduction type and is doped higher than the inner zone. The additional zones have a dopant level and the additional zones of the second conduction type are mutually spaced apart, for depleting charge carriers when a blocking voltage is applied.
Inventors
- 👤 Jenoe Tihanyi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 22:56
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D30/601; H10D30/603; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/105; H10D62/109; H10D62/111; H10D62/13; H10D62/149; H10D62/151; H10D62/156; H10D62/157; H10D62/17; H10D62/213; H10D62/221; H10D62/235; H10D62/299; H10D62/307
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
153 words
A power MOSFET, comprising a semiconductor body having: first and second surfaces; an inner zone of a first conduction type and a given dopant concentration; at least one base zone of a second conduction type being adjacent said inner zone and said first surface; at least one source zone being embedded in said at least one base zone; at least one drain zone adjacent one of said surfaces; additional zones of the second conduction type being disposed in said inner zone inside a space charge zone developing when a blocking voltage is present; and at least one additional zone of the first conduction type being disposed between said additional zones of the second conduction type and being doped higher than said inner zone; said additional zones having a dopant level and said additional zones of the second conduction type being mutually spaced apart, for depleting charge carriers when a blocking voltage is applied.
Claim 2
Dependent Claim
153 words
A power MOSFET, comprising a semiconductor body having: first and second surfaces; an inner zone of a first conduction type and a given dopant concentration; at least one base zone of a second conduction type being adjacent said inner zone and said first surface; at least one source zone being embedded in said at least one base zone; at least one drain zone adjacent one of said surfaces; additional zones of the second conduction type being disposed in said inner zone inside a space charge zone developing when a blocking voltage is present; and at least one additional zone of the first conduction type being disposed between said additional zones of the second conduction type and being doped higher than said inner zone; said additional zones having a dopant level and said additional zones of the second conduction type being mutually spaced apart, for depleting charge carriers when a blocking voltage is applied.
Claim 3
Dependent Claim
43 words
The power MOSFET according to claim 1, wherein said at least one base zone and said drain zone are spaced apart by a shortest connecting line, and said additional zones have a flat shape and are disposed parallel to said shortest connecting line.
Claim 4
Dependent Claim
43 words
The power MOSFET according to claim 1, wherein said at least one base zone and said drain zone are spaced apart by a shortest connecting line, and said additional zones have a rod-like shape and are disposed parallel to said shortest connecting line.
Claim 5
Dependent Claim
25 words
The power MOSFET according to claim 3, wherein said drain zone adjoins said second surface, and said additional zones are disposed perpendicular to said surface.
Claim 6
Dependent Claim
25 words
The power MOSFET according to claim 3, wherein said drain zone adjoins said second surface, and said additional zones are disposed perpendicular to said surface.
Claim 7
Dependent Claim
27 words
The power MOSFET according to claim 2, wherein said drain zone and said additional zones are adjacent said first surface and are disposed parallel to said surface.
Claim 8
Dependent Claim
27 words
The power MOSFET according to claim 3, wherein said drain zone and said additional zones are adjacent said first surface and are disposed parallel to said surface.
Claim 9
Dependent Claim
26 words
The power MOSFET according to claim 1, wherein said additional zones of the second conductivity type are electrically connected to said at least one base zone.
Claim 10
Dependent Claim
44 words
The power MOSFET according to claim 1, wherein said at least one base zone is a plurality of base zones, and said at least one source zone is a plurality of source zones each being embedded in a respective one of said base zones.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-07-31 | 1999-01-30 | 1999-08-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-07-31 | 2003-01-30 | 2003-08-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-07-31 | 2007-01-30 | 2007-08-01 | $7700.00 | Window Closed / Lapsed |