Abstract A real-time multi-zone semiconductor wafer temperature and process uniformity control system for use in association with a semiconductor wafer fabrication reactor comprises a multi-zone illuminator (130), a multi-point temperature sensor (132), and process control circuitry (150). The method and system of the invention significantly improved wafer (60) temperature control and process uniformity. The multi-zone illuminator module (130) selectively and controllably heats segments of the semiconductor wafer (60). Multi-point temperature sensor (132) independently performs pyrometry-based temperature measurements of predetermined points of the semiconductor wafer (60). Process control circuitry (150) operates in association with the multi-zone illuminator (130) and the multi-point temperature sensor (132) for receiving the temperature measurements and selectively controlling the illuminator module to maintain uniformity in the temperature measurements. A scatter module (116) also provides input to process control circuitry (150) for real-time emissivity compensation of the pyrometry-based temperature measurements of semiconductor wafer (60).
A method for real-time multi point semiconductor wafer temperature and process uniformity control, comprising the steps of: selectively, independently and controllably heating segments of the semiconductor wafers; independently performing temperature measurements on a plurality of points of the semiconductor wafer, said temperature measurements being made as a function of a plurality of incident and reflected coherent light beams and incoherent radiant energy-reflected from said semiconductor wafer; and receiving said temperature measurements and selectively controlling the temperature of the semiconductor wafer to maintain uniformity in said temperature measurements.
Claim 2
Independent Claim
87 words
A method for real-time multi point semiconductor wafer temperature and process uniformity control, comprising the steps of: selectively, independently and controllably heating segments of the semiconductor wafers; independently performing temperature measurements on a plurality of points of the semiconductor wafer, said temperature measurements being made as a function of a plurality of incident and reflected coherent light beams and incoherent radiant energy-reflected from said semiconductor wafer; and receiving said temperature measurements and selectively controlling the temperature of the semiconductor wafer to maintain uniformity in said temperature measurements.
Claim 3
Dependent Claim
102 words
The method of claim 1, further comprising the steps making real-time, non-invasive, in-situ temperature measurements of the semiconductor wafer, comprising: directing a plurality of incident coherent beams of optical energy to the surface of the semiconductor wafer, comprising; collecting a plurality of reflected coherent beams of optical energy resulting from the reflection of said plurality of incident coherent beams from the semiconductor wafer; collecting incoherent radiant energy emitted from a plurality of points on a semiconductor wafer; and calculating temperature values for the semiconductor wafer as a function of said plurality of incident and reflected coherent beams and said incoherent radiant energy.