US5431964A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of pretreating the deposition chamber and/or the substrate for the selective deposition of tungsten
Assignee: Chartoleaux KG LLC
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Filing: 1993-08-26
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Granted: 1995-07-11
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Expires: 2013-08-26
Abstract
Abstract The invention relates to the method of pretreating a deposition chamber intended to be used for the selective vapor deposition of tungsten, characterized in that a plasma of fluorine-containing gas, optionally combined with an inert diluting gas, is induced in the said deposition chamber. Advantageously, the same fluorine treatment is applied to the substrate intended to receive the selective tungsten deposition.
Inventors
- 👤 Maurice Rivoire
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 05:07
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0227; C23C16/0245; C23C16/04; C23C16/44; C23C16/4401; C23C16/4405; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
68 words
A method of pretreating for enhancing the selective deposition of tungsten, consisting essentially of the steps: (a) pretreating a deposition chamber with a plasma of a fluorine-containing gas such that traces of residual fluorine remain in said deposition chamber; and (b) depositing tungsten by chemical vapor deposition on a substrate in said deposition chamber with said traces of residual fluorine at a temperature of 250° C. or more.
Claim 2
Independent Claim
68 words
A method of pretreating for enhancing the selective deposition of tungsten, consisting essentially of the steps: (a) pretreating a deposition chamber with a plasma of a fluorine-containing gas such that traces of residual fluorine remain in said deposition chamber; and (b) depositing tungsten by chemical vapor deposition on a substrate in said deposition chamber with said traces of residual fluorine at a temperature of 250° C. or more.
Claim 3
Dependent Claim
17 words
The method of claim 1, wherein said pretreating is carried out at a temperature of 250°-500° C.
Claim 4
Dependent Claim
26 words
The method of claim 2, wherein said pretreating is carried out a temperature of 300°-400° C., and at a pressure of 150 millitorr to 1 torr.
Claim 5
Dependent Claim
26 words
The method of claim 2, wherein said pretreating is performed for 5-120 seconds, with a flow rate of said fluorine-containing gas of 10-200 cm 3 /min.
Claim 6
Dependent Claim
13 words
The method of claim 1, wherein said substrate comprises silicon oxide and tungsten.
Claim 7
Dependent Claim
26 words
The method of claim 1, wherein said fluorine-containing gas is selected from the group consisting of NF 3 , SF 6 , CF 4 and HF.
Claim 8
Dependent Claim
19 words
The method of claim 1, wherein said pretreating is carried out after introducing said substrate into said deposition chamber.
Claim 9
Dependent Claim
20 words
The method of claim 1, wherein said pretreating is carried out before introducing of said substrate into said deposition chamber.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-07-10 | 1999-01-09 | 1999-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-07-10 | 2003-01-09 | 2003-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-07-10 | 2007-01-09 | 2007-07-11 | $7700.00 | Window Closed / Lapsed |