US5420449A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Capacitor for a semiconductor device
Assignee: Rohm Co Ltd
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Filing: 1994-04-13
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Granted: 1995-05-30
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Expires: 2014-04-13
Abstract
Abstract A semiconductor device having a capacitor of a large capacitance in spite of its small area, is composed of a first insulating film formed on a semiconductor substrate, a first polysilicon film, a second insulating film and a second polysilicon film which are formed in that order on the first insulating film. The second polysilicon film is connected to the semiconductor substrate by means of a metal film to function as one electrode while the first polysilicon film functions as the other electrode. The first and second insulating film are each made of a dielectric material.
Inventors
- 👤 Hiroshi Oji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 22:13
CPC Classifications
H; H10; H10B; H10B69/00
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
139 words
A semiconductor device having a capacitor comprising: a semiconductor substrate; a first insulating film formed on said semiconductor substrate in an area of said semiconductor substrate which is interposed between field oxide films, said area being free of a pn junction; a first polysilicon film formed on said first insulating film; a second insulating film formed on said first polysilicon film; and a second polysilicon film which is formed on the second insulating film, wherein the second polysilicon film is connected to the semiconductor substrate in a region which is free of said first and second polysilicon films by means of a metal film to function as one electrode of the capacitor while the first polysilicon film functions as another electrode of the capacitor, and wherein the first and second insulating films are each made of a dielectric material.
Claim 2
Dependent Claim
139 words
A semiconductor device having a capacitor comprising: a semiconductor substrate; a first insulating film formed on said semiconductor substrate in an area of said semiconductor substrate which is interposed between field oxide films, said area being free of a pn junction; a first polysilicon film formed on said first insulating film; a second insulating film formed on said first polysilicon film; and a second polysilicon film which is formed on the second insulating film, wherein the second polysilicon film is connected to the semiconductor substrate in a region which is free of said first and second polysilicon films by means of a metal film to function as one electrode of the capacitor while the first polysilicon film functions as another electrode of the capacitor, and wherein the first and second insulating films are each made of a dielectric material.
Claim 3
Dependent Claim
15 words
A semiconductor device of claim 1, further including a flash memory having a floating gate.
Claim 4
Dependent Claim
32 words
A semiconductor device of claim 1, wherein the second insulating film comprises a silicon oxide film, a silicon nitride film and a silicon oxide film so as to have a three-layered structure.
Claim 5
Dependent Claim
32 words
A semiconductor device of claim 2, wherein the second insulating film comprises a silicon oxide film, a silicon nitride film and a silicon oxide film so as to have a three-layered structure.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-05-29 | 1998-11-28 | 1999-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-05-29 | 2002-11-28 | 2003-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-05-29 | 2006-11-28 | 2007-05-30 | $7700.00 | Window Closed / Lapsed |