US5414286A
Expired / Lapsed
US
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Nonvolatile memory, method of fabricating the same, and method of reading information from the same
Assignee: Samsung Electronics Co Ltd
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Filing: 1993-03-18
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Granted: 1995-05-09
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Expires: 2013-03-18
Abstract
Abstract A nonvolatile memory including a plurality of memory cells comprising a semiconductor substrate, a first electrode formed on the substrate, a floating gate formed on the side wall of the first electrode, and a second electrode, wherein the memory cells are arranged in X and Y directions to form a matrix; the first electrodes of memory cells arranged in the Y direction are connected in common in the Y direction, the second electrodes are connected in common in the Y direction; a memory cell and one of its adjacent memory cells arranged in the X direction have a first impurity diffused layer in common; the memory cell and the other adjacent memory thereof have a second impurity diffused layer in common; and the first impurity diffused layers of the memory cells arranged in the X direction are further connected in common by a conductive layer.
Inventors
- 👤 Yoshimitsu Yamauchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 17:06
CPC Classifications
H; H10; H10B; H10B69/00; G; G11; G11C; G11C16/00; G11C16/02; G11C16/04; G11C16/0408; G11C16/0433
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
198 words
A nonvolatile memory including a plurality of memory cells comprising: a semiconductor substrate provided with a first impurity diffused layer and a second impurity diffused layer; a first electrode formed over the semiconductor substrate; a floating gate formed adjacent the side wall of the first electrode, the floating gate and the first electrode being separated by a sidewall spacer; and a second electrode overlaying at least the floating gate, the second electrode and the floating gate being separated by a spacer, wherein the said memory cells are arranged in X and Y directions to form a matrix; the first electrodes of memory cells which are arranged in the Y direction are connected in common in the Y direction, while the second electrodes thereof are connected in common in the Y direction; a memory cell and one of its adjacent memory cells which are arranged in the X direction have a first impurity diffused layer in common; the said memory cell and the other adjacent memory cell thereof have a second impurity diffused layer in common; and the said first impurity diffused layers of the memory cells arranged in the X direction are further connected by a conductive layer.
Claim 2
Dependent Claim
198 words
A nonvolatile memory including a plurality of memory cells comprising: a semiconductor substrate provided with a first impurity diffused layer and a second impurity diffused layer; a first electrode formed over the semiconductor substrate; a floating gate formed adjacent the side wall of the first electrode, the floating gate and the first electrode being separated by a sidewall spacer; and a second electrode overlaying at least the floating gate, the second electrode and the floating gate being separated by a spacer, wherein the said memory cells are arranged in X and Y directions to form a matrix; the first electrodes of memory cells which are arranged in the Y direction are connected in common in the Y direction, while the second electrodes thereof are connected in common in the Y direction; a memory cell and one of its adjacent memory cells which are arranged in the X direction have a first impurity diffused layer in common; the said memory cell and the other adjacent memory cell thereof have a second impurity diffused layer in common; and the said first impurity diffused layers of the memory cells arranged in the X direction are further connected by a conductive layer.
Claim 3
Dependent Claim
32 words
A nonvolatile memory of claim 1 wherein said first impurity diffused layers of the memory cells arranged in the X direction are connected by a conductive layer with a pullout contact layer.
Claim 4
Dependent Claim
46 words
A nonvolatile memory of claim 1 wherein said first diffused layers of the memory cells arranged in the X direction are connected by a conductive layer with a pullout contact layer, the pullout contact layer being formed individually on each of the first impurity diffused layers.
Claim 5
Dependent Claim
40 words
A nonvolatile memory of claim 1 wherein said second electrode extends over the second impurity diffusion layer and the floating gate, the second impurity diffusion layer being shared by two adjacent memory cells which are arranged in the X direction.
Claim 6
Dependent Claim
110 words
A nonvolatile memory including a plurality of memory cells formed as a matrix on a substrate, each memory cell comprising: a source region formed in the substrate; a drain region formed in the substrate; an auxiliary gate formed over the substrate; a floating gate formed over the substrate; a control gate formed over at least a portion of the auxiliary gate and over at least a portion of the floating gate; wherein two adjacent memory cells in an X direction share a common source region or a common drain region; and wherein two adjacent memory cells in a Y direction share a common auxiliary gate and a common control gate.
Claim 7
Dependent Claim
110 words
A nonvolatile memory including a plurality of memory cells formed as a matrix on a substrate, each memory cell comprising: a source region formed in the substrate; a drain region formed in the substrate; an auxiliary gate formed over the substrate; a floating gate formed over the substrate; a control gate formed over at least a portion of the auxiliary gate and over at least a portion of the floating gate; wherein two adjacent memory cells in an X direction share a common source region or a common drain region; and wherein two adjacent memory cells in a Y direction share a common auxiliary gate and a common control gate.
Claim 8
Dependent Claim
20 words
A nonvolatile memory of claim 5 wherein the auxiliary gate and the floating gate are separated by an insulating film.
Claim 9
Dependent Claim
20 words
A nonvolatile memory of claim 5 wherein the floating gate and the control gate are separated by an insulating film.
Claim 10
Dependent Claim
21 words
A nonvolatile memory of claim 5 wherein the source region is connected to a conductive layer with a pullout contact layer.
Claim 11
Dependent Claim
43 words
A nonvolatile memory of claim 5 wherein the source region of the memory cells arranged in the X direction are connected to a conductive layer with a pullout contact layer, the pullout contact layer being formed individually on each of the source regions.
Claim 12
Dependent Claim
15 words
A nonvolatile memory of claim 5 wherein the control gate entirely covers the floating gate.
Claim 13
Dependent Claim
22 words
A nonvolatile memory of claim 5 wherein a distance separating auxiliary gates of adjacent cells in an X direction is 0.6 μm.
Claim 14
Dependent Claim
33 words
A nonvolatile memory of claim 4 wherein said second electrode extends over the second impurity diffusion layer and the floating gates of two adjacent memory cells which are adjacent in the X direction.
References Cited (Backward Citations)
US5338952A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-05-08 | 1998-11-07 | 1999-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-05-08 | 2002-11-07 | 2003-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-05-08 | 2006-11-07 | 2007-05-09 | $7700.00 | Window Closed / Lapsed |