US5412679A
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Optical waveguide epitaxially grown on semiconductors for upconversion
Assignee: Eastman Kodak Co
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Filing: 1994-02-14
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Granted: 1995-05-02
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Expires: 2014-02-14
Abstract
Abstract A multilayer structure is disclosed which includes a single crystal semiconductor substrate. On the substrate is an epitaxial buffer layer, and on the buffer is an epitaxial fluoride outer layer exhibiting upconversion excitation upon red or infrared irradiation.
Inventors
- 👤 Liang-Sun Hung
- 👤 Gustavo R. Paz-Pujalt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 03:41
CPC Classifications
H; H01; H01S; H01S3/00; H01S3/05; H01S3/06; H01S3/063; H01S3/0632; H01S3/14; H01S3/16; H01S3/1601; H01S3/1603; H01S5/00; H01S5/02; H01S5/026
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
56 words
A multilayer structure comprising: a single crystal semiconductor substrate; an epitaxial buffer layer overlaying the substrate; and an epitaxial fluoride outer film layer exhibiting upconversion excitation upon red or infrared irradiation wherein said epitaxially fluoride layer is BaY 2 F 8 , BaYYbF 8 , or YLiF 4 doped with Ho, Er, Nd, Tm, or Pr.
Claim 2
Dependent Claim
56 words
A multilayer structure comprising: a single crystal semiconductor substrate; an epitaxial buffer layer overlaying the substrate; and an epitaxial fluoride outer film layer exhibiting upconversion excitation upon red or infrared irradiation wherein said epitaxially fluoride layer is BaY 2 F 8 , BaYYbF 8 , or YLiF 4 doped with Ho, Er, Nd, Tm, or Pr.
Claim 3
Dependent Claim
52 words
The multilayer structure according to claim 1 wherein said substrate is selected from Group III-Group V compounds such as GaAs, GaP, InAs, GaSb, InSb, and Al x Ga 1-x As, and selected from Group IV such as Si, Ge, and Si x Ge 1-x , where x is from 0 to 1.
Claim 4
Dependent Claim
17 words
The multilayer structure according to claim 2 wherein said substrate is undoped, lightly doped, or heavily doped.
Claim 5
Dependent Claim
32 words
The multilayer structure according to claim 1 wherein said buffer layer structurally matches both said substrate and upconversion layer, and has an index of refraction lower than that of said upconversion layer.
Claim 6
Dependent Claim
15 words
The multilayer structure according to claim 4 wherein said buffer layer is a metal fluoride.
Claim 7
Dependent Claim
41 words
The multilayer structure according to claim 5 wherein said buffer layer is selected from CaF 2 , SrF 2 , Ca x Sr 1-x F 2 , BaF 2 , MgF 2 or LiF, where x is from 0 to 1.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-05-01 | 1998-10-31 | 1999-05-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-05-01 | 2002-10-31 | 2003-05-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-05-01 | 2006-10-31 | 2007-05-02 | $7700.00 | Window Closed / Lapsed |