Method for fabricating a thin film transistor

Abstract

Abstract A method for fabricating a thin film transistor using a polysilicon with a double junction structure. The method includes the steps of: forming a first insulation film, a semiconductor layer and a second insulation film on a transparent substrate, in this order; patterning the second insulation film and the semiconductor layer to remain only on a channel region; forming a first conductivity type of semiconductor layer having a low concentration and a first conductivity type of semiconductor layer having a high concentration on the whole surface, in this order, so that they are coupled to the remaining semiconductor layer; removing the first conductivity type of semiconductor layer having a low concentration and the first conductivity type of semiconductor layer having a high concentration which are located in the channel region selectively using the remaining second insulation film as an etch stopper, to define a source region and a drain region; removing the exposed portion of remaining second insulation film and then forming a gate insulation film on the whole surface; forming a gate electrode on the gate insulation film located over the channel region and the drain region; and forming a source electrode and a drain electrode, so that they are coupled to the source region and the drain region, respectively.

Inventors

• 👤 Gee S. Chae

Bibliographic Details