Image sensor providing output image signal with reduced offset

Claim 2

An image sensor comprising: photo sensing elements, having charge storage capability, for transducing received light into electrical quantities; first switching elements, each having a first source electrode, a first gate electrode and a first drain electrode with the first source and drain electrodes overlapping the first gate electrode to provide overlap capacity, for transferring charge stored in the photo sensing elements; second switching elements, each having a second source electrode, a second gate electrode and a second drain electrode with the second source and drain electrodes overlapping the second gate electrode to provide overlap capacity for resetting the photo sensing elements by removing the charge still left in the photo sensing elements after the charge transfer; first gate pulse generator for generating a first pulse signal to be applied to the first switching elements; and a second gate pulse generator for generating a second pulse signal to be applied to the second switching elements, the amplitude of the second pulse signal being different from that of the first pulse signal based on the difference between the overlap capacity of the first switching elements and the overlap capacity of the second switching elements.

Claim 3

The image sensor according to claim 1, in which the first and second switching elements respectively have the first electrodes and the second electrodes layered in an overlapping manner and respective insulating layers interlayered between adjacent electrodes, thereby providing overlap capacitance for storing the charge.

Claim 4

The image sensor according to claim 1, in which the first pulse signal is larger in amplitude than the second pulse signal.

Claim 5

The image sensor according to claim 1, in which the first pulse signal is smaller in amplitude than the second pulse signal.

Claim 6

An image sensor comprising: photo sensing elements, having charge storage capability, for transducing received light into electrical quantities; first switching elements, each having a first source electrode, a first gate electrode and a first drain electrode with the first source and drain electrodes overlapping the first gate electrode to provide overlap capacity, for transferring charge stored in the photo sensing elements; second switching elements, each having a second source electrode, a second gate electrode and a second drain electrode with the second source and drain electrodes overlapping the second gate electrode to provide overlap capacity for resetting the photo sensing elements by removing the charge still left in the photo sensing elements after the charge transfer; the first and second switching elements having the respective first electrodes and second electrodes thereof arrayed such that the first and second source electrodes of the first and second switching elements being aligned in a vertical scan direction, and the first and second drain electrodes also being aligned in the vertical scan direction; and the amplitude of the second pulse signal being different from that of the first pulse signal based on difference between the overlap capacity of the first switching elements and the overlap capacity of the second switching elements.

Claim 7

An image sensor comprising: photo sensing elements, having charge storage capability, for transducing received light into electrical quantities; first switching elements, each having a first source electrode, a first gate electrode and a first drain electrode with the first source and drain electrodes overlapping the first gate electrode to provide overlap capacity, for transferring charge stored in the photo sensing elements; second switching elements, each having a second source electrode, a second gate electrode and a second drain electrode with the second source and drain electrodes overlapping the second gate electrode to provide overlap capacity for resetting the photo sensing elements by removing the charge still left in the photo sensing elements after the charge transfer; the first and second switching elements having the respective first electrodes and second electrodes thereof arrayed such that the first and second source electrodes of the first and second switching elements being aligned in a vertical scan direction, and the first and second drain electrodes also being aligned in the vertical scan direction; and the amplitude of the second pulse signal being different from that of the first pulse signal based on difference between the overlap capacity of the first switching elements and the overlap capacity of the second switching elements.

Claim 8

An image sensor comprising: photo sensing elements, having charge storage capability, for transducing received light into electrical quantities; first switching elements, having first source, gate and drain electrodes and having charge storage capability, for transferring the charge stored in the photo sensing elements; second switching elements, having second source, gate and drain electrodes and having charge storage capability, for resetting the photo sensing elements by removing the charge still left in the photo sensing elements after the charge transfer: wherein, in each of the first and second switching elements, the source electrode overlaps with the gate electrode, and the drain electrode also overlaps with the gate electrode, thereby forming overlap capacitance, and the overlap capacitance of the second switching element is larger than that of the first switching element.

Claim 9

An image sensor comprising: photo sensing elements, having charge storage capability, for transducing received light into electrical quantities; first switching elements, having first source, gate and drain electrodes and having charge storage capability, for transferring the charge stored in the photo sensing elements; second switching elements, having second source, gate and drain electrodes and having charge storage capability, for resetting the photo sensing elements by removing the charge still left in the photo sensing elements after the charge transfer: wherein, in each of the first and second switching elements, the source electrode overlaps with the gate electrode, and the drain electrode also overlaps with the gate electrode, thereby forming overlap capacitance, and the overlap capacitance of the second switching element is larger than that of the first switching element.

Claim 10

The image sensor according to claim 6, in which when the ratio of W/L of the first switching element is 9, the ratio of W/L of the second switching element is within 12 to 15 where W indicates the length of the gate electrode as viewed in a main horizontal scan direction, and L indicates the length of each of the source and the drain electrodes as viewed in a vertical scan direction.

Claim 11

An image sensor comprising: photo sensing elements, having charge storage capability, for transducing received light into electrical quantities; first switching elements, each having a first source electrode, a first gate electrode and a first drain electrode with the first source and drain electrodes overlapping the first gate electrode to provide overlapping capacity, for transferring charge stored in the photo sensing elements; second switching elements, each having a second source electrode, a second gate electrode and a second drain electrode with the second source and drain electrodes overlapping the second gate electrode to provide overlapping capacity for resetting the photo sensing elements by removing the charge still left in the photo sensing elements after the charge transfer; wherein a potential applied to the source electrodes of the second switching elements is not equal to the ground potential based on difference between the overlap capacity of the first switching elements and the overlap capacity of the second switching elements.

Claim 12

An image sensor comprising: photo sensing elements, having charge storage capability, for transducing received light into electrical quantities; first switching elements, each having a first source electrode, a first gate electrode and a first drain electrode with the first source and drain electrodes overlapping the first gate electrode to provide overlapping capacity, for transferring charge stored in the photo sensing elements; second switching elements, each having a second source electrode, a second gate electrode and a second drain electrode with the second source and drain electrodes overlapping the second gate electrode to provide overlapping capacity for resetting the photo sensing elements by removing the charge still left in the photo sensing elements after the charge transfer; wherein a potential applied to the source electrodes of the second switching elements is not equal to the ground potential based on difference between the overlap capacity of the first switching elements and the overlap capacity of the second switching elements.

Claim 13

The image sensor according to claim 8, in which the potential applied to the second source electrodes of the second switching elements is lower than the ground potential.

Claim 14

The image sensor according to claim 8, in which the potential applied to the second source electrodes of the second switching elements is higher than the ground potential.