Long wavelength IR photo-induced switching of a resonant tunnelling diode using the intersubband transition

Claim 2

An optical switching device comprising an asymmetrical double barrier resonant tunnelling diode (RTD) connected in series with load resistance means to a power source, means for illuminating the RTD with an infrared incident light beam, means for applying signal power to the RTD, and means for varying said signal power within the RTD.

Claim 3

A device as defined in claim 1 in which the light beam is monochromatic.

Claim 4

A device as defined in claim 2 in which the RTD is formed of a sandwich structure comprised of semiconductor material of a type having a first bandgap contained between semiconductor layers having a second bandgap which is wider than the first bandgap, whereby a quantum well is produced.

Claim 5

A device as defined in claim 3 in which the signal power is an optical signal.

Claim 6

A device as defined in claim 3 in which the signal power is received from said power source, and further including means for detecting an output signal voltage across one of said load resistance means and said RTD.

Claim 7

A device as defined in claim 5 in which the resistance of said load resistance means is sufficiently small so as to cause the RTD to oscillate, and means for varying the power of the incident light beam so as to cause the oscillation frequency of the RTD to vary.

Claim 8

A device as defined in claim 5 in which the resistance of said load resistor is sufficiently small so as to cause the RTD to oscillate, and means for chopping the incident light beam at a frequency close to a natural oscillating frequency of the RTD.

Claim 9

A device as defined in claim 5, in which the resistance of the load resistance means is approximately equal to the magnitude of a negative differential resistance of the current-voltage relationship of the RTD.

Claim 10

A device as defined in claim 5, in which the resistance of the load resistance means is greater than the magnitude of a negative differential resistance of a current-voltage relationship of the RTD, whereby a bistable device with hysteresis is formed.

Claim 11

A device as defined in claim 4 in which the resistance of said load resistance means is sufficiently small so as to cause the RTD to oscillate, and means for varying the power of the incident light beam so as to cause the oscillation frequency of the RTD to vary.

Claim 12

A device as defined in claim 4 in which the resistance of said load resistance means is sufficiently small as to cause the RTD to oscillate, and means for chopping the incident light beam at a frequency close to a natural oscillating frequency of the RTD.

Claim 13

A device as defined in claim 4, in which the resistance of the load resistance means is approximately equal to the magnitude of a negative differential resistance of the current-voltage relationship of the RTD.

Claim 14

A device as defined in claim 4, in which the resistance of the load resistance means is greater than the magnitude of a negative differential resistance of the current-voltage characteristic of the RTD, whereby a bistable device with hysteresis is formed.

Claim 15

A device as defined in claim 4, in which the resistance of the load resistance means is smaller than the magnitude of a negative differential resistance of the current-voltage characteristic of the RTD and having a load line in a positive resistance region of the current-voltage characteristic thereof, means for varying the incident light beam between minimum and maximum voltage switching points of a hysteresis voltage vs incident power characteristic of the RTD, and detecting a signal voltage across one of said load resistor and the RTD.

Claim 16

A device as defined in claim 4, in which the resistance of the load resistance means is smaller than the magnitude of a negative differential resistance of the current-voltage characteristic of the RTD, and having a load line in a positive resistance region of the current-voltage characteristic thereof, means for varying the incident light beam between predetermined minimum and maximum power levels of an intersubband absorption coefficient vs incident light beam characteristic of the RTD, whereby the intensity of optical power carried by said intermediate layer with said incident power is varied with hysteresis.

Claim 17

A device as defined in claim 15, forming a memory element.

Claim 18

A device as defined in claim 15, forming a detector.

Claim 19

A device as defined in claim 7, forming a phase locked oscillator.