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US5395495A Expired / Lapsed US ⏱️ 0.0 years remaining

Fabrication of ferroelectric domain reversals

Assignee: Fujifilm Holdings Corp
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Filing: 1993-04-09
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Granted: 1995-03-07
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Expires: 2013-04-09
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Abstract

Abstract The fabrication method for ferroelectric domain reversals wherein domain reversals are definitely produced in the vicinity of the surface of a ferroelectric by radiating a charged particle beam onto the ferroelectric. An SiO 2 film 2 whose electrical resistance is higher than that of LiNbO 3 is deposited on the surface of a substrate which is exposed to an electron beam, thereby fabricating domain reversals which extend along the direction an electron beam radiation.

Inventors

  • 👤 Nobuharu Nozaki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 06:50
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/35; G02F1/355; G02F1/3558

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 80 words
An improved fabrication method for ferroelectric domain reversals in which domain reversals are formed to extend in a direction defined by a charged particle beam of radiation characterized by the step of irradiating the charged particle beam onto a unipolarized ferroelectric through a high resistance layer having an electrical resistance higher than that of the ferroelectric, said high resistance layer having been previously deposited on the surface of the ferroelectric which is to be exposed to the charged particle beam.
Claim 2
Dependent Claim 80 words
An improved fabrication method for ferroelectric domain reversals in which domain reversals are formed to extend in a direction defined by a charged particle beam of radiation characterized by the step of irradiating the charged particle beam onto a unipolarized ferroelectric through a high resistance layer having an electrical resistance higher than that of the ferroelectric, said high resistance layer having been previously deposited on the surface of the ferroelectric which is to be exposed to the charged particle beam.
Claim 3
Dependent Claim 40 words
The fabrication method for ferroelectric domain reversals as defined in claim 1, wherein each time a target area of the surface is exposed to the charge particle beam for a given period, the ferroelectric is transferred with a given pitch.
Claim 4
Dependent Claim 45 words
The fabrication method for ferroelectric domain reversals as defined in claim 1, wherein photoresist which acts as a barrier to the beam is deposited over the high resistance layer with given pitches, and the ferroelectric with the photoresist is exposed to the charged particle beam.
Claim 5
Dependent Claim 75 words
In a fabrication method for ferroelectric domain reversals in which domain reversals are formed to extend along the direction of a charged particle beam radiation by irradiating the charged particle beam onto a unipolarized ferroelectric, an improvement comprising the steps of: (a) depositing a high resistance layer having an electrical resistance higher than that of the ferroelectric; (b) exposing said high resistance layer to a charged particle beam; and (c) removing said high resistance layer.
Claim 6
Dependent Claim 75 words
In a fabrication method for ferroelectric domain reversals in which domain reversals are formed to extend along the direction of a charged particle beam radiation by irradiating the charged particle beam onto a unipolarized ferroelectric, an improvement comprising the steps of: (a) depositing a high resistance layer having an electrical resistance higher than that of the ferroelectric; (b) exposing said high resistance layer to a charged particle beam; and (c) removing said high resistance layer.
Claim 7
Dependent Claim 41 words
The improved fabrication method for ferroelectric domain reversals as recited in clam 4, wherein each time a target area of the surface is exposed to the charge particle beam for a given period, the ferroelectric is transferred with a given pitch.
Claim 8
Dependent Claim 41 words
The improved fabrication method for ferroelectric domain reversals as recited in clam 4, wherein each time a target area of the surface is exposed to the charge particle beam for a given period, the ferroelectric is transferred with a given pitch.
Claim 9
Dependent Claim 46 words
The improved fabrication method for ferroelectric domain reversals as defined in claim 4, wherein photoresist which acts as a barrier to the beam is deposited over the high resistance layer with given pitches, and the ferroelectric with the photoresist is exposed to a charged particle beam.
Claim 10
Dependent Claim 59 words
The improved fabrication method for ferroelectric domain reversals as defined in claim 4, wherein said method step (c) comprises the step etching and removing said high resistance layer and wherein said improved method further comprises the step of (d) optically inspecting at least one surface of said ferroelectric for surface variations indicative of formation of said ferroelectric domain reversals.
Claim 11
Dependent Claim 68 words
In a fabrication method for ferroelectric domain reversals in which domain reversals are formed to extend along the direction of a charged particle beam radiation by irradiating the charged particle beam onto a unipolarized ferroelectric, an improvement comprising the steps of: (a) depositing a high resistance layer having an electrical resistance higher than that of the ferroelectric; (b) exposing said high resistance layer to a charged particle beam.
Claim 12
Dependent Claim 68 words
In a fabrication method for ferroelectric domain reversals in which domain reversals are formed to extend along the direction of a charged particle beam radiation by irradiating the charged particle beam onto a unipolarized ferroelectric, an improvement comprising the steps of: (a) depositing a high resistance layer having an electrical resistance higher than that of the ferroelectric; (b) exposing said high resistance layer to a charged particle beam.

References Cited (Backward Citations)

US5036220A Cited
US5036220B1 Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1998-03-06 1998-09-05 1999-03-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2002-03-06 2002-09-05 2003-03-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2006-03-06 2006-09-05 2007-03-07 $7700.00 Window Closed / Lapsed

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