US5392238A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Nonvolatile semiconductor memory device
Assignee: Toshiba Corp
•
Filing: 1994-04-11
•
Granted: 1995-02-21
•
Expires: 2014-04-11
Abstract
Abstract A semiconductor nonvolatile memory device according to the invention comprises a first cell block having with a current path and a plurality of memory cells, a second cell block having with a current path and a plurality of memory cells, the current path of the second cell block has an end connected to a corresponding end of the current path of the first cell block, a first line electrically connected to the other end of the current path of the first cell block, and a second line electrically connected to the other end of the current path of the second cell block. The first and second lines are made to operate a bit line and a source line, or vise versa, depending on which one of said cell blocks is selected for data retrieval.
Inventors
- 👤 Ryouhei Kirisawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 06:53
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/04; G11C16/0491; G11C16/0483
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
129 words
A semiconductor nonvolatile memory device comprising: a first cell block having a current path and a plurality of memory cells; a second cell block having a current path and a plurality of memory cells, said current path of said second cell block having an end connected to a corresponding end of said current path of said first cell block; a first line electrically connected to the other end of the current path of said first cell block; a second line electrically connected to the other end of the current path of said second cell block; and switch means for causing said first and second lines to operate as a bit line and a source line, respectively, depending on which one of said cell blocks is selected for data retrieval.
Claim 2
Dependent Claim
129 words
A semiconductor nonvolatile memory device comprising: a first cell block having a current path and a plurality of memory cells; a second cell block having a current path and a plurality of memory cells, said current path of said second cell block having an end connected to a corresponding end of said current path of said first cell block; a first line electrically connected to the other end of the current path of said first cell block; a second line electrically connected to the other end of the current path of said second cell block; and switch means for causing said first and second lines to operate as a bit line and a source line, respectively, depending on which one of said cell blocks is selected for data retrieval.
Claim 3
Dependent Claim
44 words
A semiconductor nonvolatile memory device according to claim 1, wherein said switch means causes the first and second lines to operate as a source line and a bit line, respectively, for retrieving data from one of the memory cells of said first cell block.
Claim 4
Dependent Claim
63 words
A semiconductor nonvolatile memory device according to claim 2, wherein the memory cells of said first cell block are connected in series between said first line and an end of the current path of said second cell block, and the memory cells of said second cell block are connected in series between said second line and an end of said first cell block.
Claim 5
Dependent Claim
38 words
A semiconductor nonvolatile memory device according to claim 3, wherein all memory cells of said second cell block are made electrically conductive while data is being retrieved from one of the memory cells of said first cell block.
Claim 6
Dependent Claim
54 words
A semiconductor nonvolatile memory device according to claim 1, wherein each of the memory cells of said first and second cell blocks is constituted by a gate insulation layer and an insulated gate field effect transistor comprising an electric charge storage layer arranged in the gate insulation film, for regulating a threshold voltage level.
Claim 7
Dependent Claim
22 words
A semiconductor nonvolatile memory device according to claim 5, wherein each of the insulated gate field effect transistors has a control gate.
Claim 8
Dependent Claim
20 words
A semiconductor nonvolatile memory device according to claim 6, wherein said control gates are electrically connected to different word lines.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-02-20 | 1998-08-22 | 1999-02-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-02-20 | 2002-08-22 | 2003-02-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-02-20 | 2006-08-22 | 2007-02-21 | $7700.00 | Window Closed / Lapsed |