US5391906A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device provided with capacitor
Assignee: Yamaha Corp
•
Filing: 1994-06-22
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Granted: 1995-02-21
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Expires: 2014-06-22
Abstract
Abstract A semiconductor integrated circuit including a MOSFET having a polycide gate structure, a resistor and a capacitor thereon is manufactured. Polycrystalline silicon film and a dielectric film are consecutively deposited. After processes of patterning and etching the dielectric film, the remaining dielectric films are used as a etching protection mask for the resistor and a capacitor insulating film for the capacitor. Then, a refractory metal silicide for a polycide gate is uniformly deposited over the remaining dielectric films. Then, the refractory metal silicide and polycrystalline silicon are consecutively etched over a patterned resist and the remaining dielectric films to simultaneously form the polycide gate, resistor and capacitor. Thus, a resistor having a precise resistance value is manufactured in a MOSFET device having a polycide gate without excessive steps.
Inventors
- 👤 Kiyoshi Natsume
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:38
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10D1/60; H10D1/68; H10D88/00; Y; Y10; Y10S; Y10S148/00; Y10S148/136
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
105 words
A semiconductor integrated circuit comprising: a thin insulating film and a thick insulating film formed on the surface of a semiconductor substrate; a gate electrode formed on said thin insulating film, said gate electrode having a laminated structure of a polycrystalline silicon layer and a refractory metal silicide layer; a capacitor element formed on said thick insulating film, said capacitor element having a laminated structure of said polycrystalline silicon layer, a dielectric film, and said refractory metal silicide layer; and a resistor element formed on said thick insulating film, said resistor element having a laminated structure of said polycrystalline silicon layer and said dielectric film.
Claim 2
Dependent Claim
105 words
A semiconductor integrated circuit comprising: a thin insulating film and a thick insulating film formed on the surface of a semiconductor substrate; a gate electrode formed on said thin insulating film, said gate electrode having a laminated structure of a polycrystalline silicon layer and a refractory metal silicide layer; a capacitor element formed on said thick insulating film, said capacitor element having a laminated structure of said polycrystalline silicon layer, a dielectric film, and said refractory metal silicide layer; and a resistor element formed on said thick insulating film, said resistor element having a laminated structure of said polycrystalline silicon layer and said dielectric film.
Claim 3
Dependent Claim
32 words
A semiconductor integrated circuit device according to claim 1, wherein said dielectric film is a silicon oxide film or a laminated layer of a silicon nitride film and a silicon oxide film.
Claim 4
Dependent Claim
29 words
A semiconductor integrated circuit device according to claim 1, wherein said refractory metal silicide layer comprises a substance from a group consisting of WSi x and MoSi x .
Claim 5
Dependent Claim
147 words
A semiconductor device comprising: a semiconductor substrate having a gate region thereon and a field insulating film thereon; a field effect transistor formed in the gate region, the field effect transistor having a gate electrode comprising polycrystalline silicon and refractory metal silicide layers; a resistor element formed don the field insulating film, the resistor element comprising a polycrystalline silicon layer having a first thickness and a dielectric film having a second thickness thereon; a capacitor element formed on the film insulating film, the capacitor element comprising: a lower electrode layer comprising a polycrystalline silicon layer having a thickness identical to the first thickness of the resistor element; a dielectric layer having thick and thin portions, wherein the thin portion having a thickness identical to the second thickness of the dielectric film formed on the resistor element; and an upper electrode layer comprising a refractory metal silicide layer.
Claim 6
Dependent Claim
147 words
A semiconductor device comprising: a semiconductor substrate having a gate region thereon and a field insulating film thereon; a field effect transistor formed in the gate region, the field effect transistor having a gate electrode comprising polycrystalline silicon and refractory metal silicide layers; a resistor element formed don the field insulating film, the resistor element comprising a polycrystalline silicon layer having a first thickness and a dielectric film having a second thickness thereon; a capacitor element formed on the film insulating film, the capacitor element comprising: a lower electrode layer comprising a polycrystalline silicon layer having a thickness identical to the first thickness of the resistor element; a dielectric layer having thick and thin portions, wherein the thin portion having a thickness identical to the second thickness of the dielectric film formed on the resistor element; and an upper electrode layer comprising a refractory metal silicide layer.
Claim 7
Dependent Claim
28 words
A semiconductor device according to claim 4, wherein the refractory metal silicide layer comprises a substance selected from a group consisting of WSi x and MoSi x .
Claim 8
Dependent Claim
34 words
A semiconductor device according to claim 4, wherein the dielectric film and the dielectric layer comprises a silicon oxide film or a laminated layer of a silicon nitride film and a silicon oxide film.
Claim 9
Dependent Claim
29 words
A semiconductor device according to claim 4, wherein the gate electrode, the resistor element and the upper and lower electrode layers of the capacitor element have side wall spacers.
Claim 10
Dependent Claim
19 words
A semiconductor device according to claim 4, wherein the lower electrode electrically contacts metal wiring through the dielectric layer.
Claim 11
Dependent Claim
25 words
A semiconductor device according to claim 4, wherein the thin portion in the dielectric layer of the capacitor element corresponds to the lower electrode layer.
Claim 12
Dependent Claim
25 words
A semiconductor device according to claim 4, wherein the thick portion in the dielectric layer of the capacitor element corresponds to the upper electrode layer.
Claim 13
Dependent Claim
142 words
A semiconductor device formed on a semiconductor substrate having a gate region thereon and a field insulating film thereon comprising: a field effect transistor formed in the gate region, the field effect transistor having a gate electrode comprising polycrystalline silicon and refractory metal silicide layers; a first analog element formed on the field insulating film, the first analog element comprising a first conductive layer and a dielectric film thereon; a second analog element formed on the field insulating film, the second analog element comprising: a lower electrode layer comprising a polycrystalline silicon layer coplanar to the top surface of the first conductive layer on the first analog element; a dielectric layer having thick and thin portions, wherein the thin portion being coplanar to the dielectric film of the first analog element; and an upper electrode layer comprising a refractory metal silicide layer.
Claim 14
Dependent Claim
142 words
A semiconductor device formed on a semiconductor substrate having a gate region thereon and a field insulating film thereon comprising: a field effect transistor formed in the gate region, the field effect transistor having a gate electrode comprising polycrystalline silicon and refractory metal silicide layers; a first analog element formed on the field insulating film, the first analog element comprising a first conductive layer and a dielectric film thereon; a second analog element formed on the field insulating film, the second analog element comprising: a lower electrode layer comprising a polycrystalline silicon layer coplanar to the top surface of the first conductive layer on the first analog element; a dielectric layer having thick and thin portions, wherein the thin portion being coplanar to the dielectric film of the first analog element; and an upper electrode layer comprising a refractory metal silicide layer.
Claim 15
Dependent Claim
25 words
A semiconductor device according to claim 11, wherein the first analog element is a resistor element and a second analog element is a capacitor element.
Claim 16
Dependent Claim
28 words
A semiconductor device according to claim 11, wherein the refractory metal silicide layer comprises a substance selected from a group consisting of WSi x and MoSi x .
Claim 17
Dependent Claim
34 words
A semiconductor device according to claim 11, wherein the dielectric film and the dielectric layer comprises a silicon oxide film or a laminated layer of a silicon nitride film and a silicon oxide film.
Claim 18
Dependent Claim
29 words
A semiconductor device according to claim 11, wherein the edges of the thin portion in the dielectric layer of the second analog element corresponds to the lower electrode layer.
Claim 19
Dependent Claim
28 words
A semiconductor device according to claim 11, wherein edges of the thick portion in the dielectric layer of the second analog element corresponds to the upper electrode layer.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1998-02-20 | 1998-08-22 | 1999-02-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-02-20 | 2002-08-22 | 2003-02-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-02-20 | 2006-08-22 | 2007-02-21 | $7700.00 | Window Closed / Lapsed |