Abstract A semiconductor device with an excess current prevention circuit includes a bootstrap circuit, a first NMOS transistor, a second NMOS transistor and a constant voltage element. The first NMOS transistor has a drain electrode to receive a power supply potential, a gate electrode to receive an output of the bootstrap circuit, and a source electrode connected to an output terminal to which an output load is connected. The second NMOS transistor has a gate electrode whose potential is held at the power supply potential and a source electrode connected to-the output terminal. The constant-voltage element such as a diode or a Zener diode is connected between the gate electrode of the first NMOS transistor and the drain electrode of the second NMOS transistor. A change in the output voltage of the first NMOS transistor as an output transistor is fed-back to the gate electrode of the first N-channel MOS transistor by the second N-channel MOS transistor, whereby the operation of preventing the excess current is carried out at a high speed.
A semiconductor circuit device with an excess current prevention circuit comprising: a bootstrap circuit; a first NMOS transistor having a drain electrode connected to a power supply terminal, a gate electrode connected to an output of said bootstrap circuit, and a source electrode connected to an output terminal; a second NMOS transistor having a drain electrode, a gate electrode connected to said power supply terminal and a source electrode connected to said output terminal; and a constant-voltage element connected between the gate electrode of said first NMOS transistor and the drain electrode of said second NMOS transistor.
Claim 2
Dependent Claim
97 words
A semiconductor circuit device with an excess current prevention circuit comprising: a bootstrap circuit; a first NMOS transistor having a drain electrode connected to a power supply terminal, a gate electrode connected to an output of said bootstrap circuit, and a source electrode connected to an output terminal; a second NMOS transistor having a drain electrode, a gate electrode connected to said power supply terminal and a source electrode connected to said output terminal; and a constant-voltage element connected between the gate electrode of said first NMOS transistor and the drain electrode of said second NMOS transistor.
Claim 3
Dependent Claim
43 words
A semiconductor circuit device according to claim 1, in which said constant-voltage element is a diode whose anode is connected to the gate electrode of said first NMOS transistor and whose cathode is connected to the drain electrode of said second NMOS transistor.
Claim 4
Dependent Claim
44 words
A semiconductor circuit device according to claim 1, in which said constant-voltage element is a Zener diode whose cathode is connected to the gate electrode of said first NMOS transistor and whose anode is connected to the drain electrode of said second NMOS transistor.