US5387809A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated circuit device capable of outputting a plurality of interface levels
Assignee: Hitachi Ltd
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Filing: 1992-01-13
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Granted: 1995-02-07
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Expires: 2012-01-13
Abstract
Abstract A semiconductor integrated circuit device includes an interface corresponding to a relatively high signal level; an interface corresponding to a relatively low signal level; and an internal circuit made responsive to a signal through either interface for generating a signal to be transmitted to the other interface. The interface corresponding to a relatively high level, the internal circuit, and a drive control circuit constituting the input circuit and output circuit of the interface corresponding to a relatively low level are operated by an operating voltage corresponding to the relatively high level. An output element of the output circuit in the interface corresponding to a relatively low level, which is to be driven by the drive control circuit, is operated by an operating voltage corresponding to the relatively low level.
Inventors
- 👤 Mikio Yamagishi
- 👤 Kazuo Koide
- 👤 Tetsuo Nakano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 21:52
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/90; H10D84/998; H03; H03K; H03K19/00; H03K19/0175; H03K19/0185; H03K19/018507; H03K19/018521
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
143 words
A semiconductor integrated circuit device, comprising: an internal logic circuit coupled to receive a first power supply voltage and which outputs a first output signal, one potential level of the first output signal representing said first power supply voltage; and an output circuit including a drive control circuit which is coupled to said internal logic circuit and to receive said first power supply voltage, and an output element which is coupled to said drive control circuit and to receive a second power supply voltage that is smaller than said first power supply voltage and which includes a push-pull type amplifier circuit comprising series-connected N-channel type MOSFETs, a second output signal being delivered from a common connected point of the series-connected N-channel type MOSFETs, one potential level of the second output signal representing said second power supply voltage, responsive to said first output signal.
Claim 2
Dependent Claim
143 words
A semiconductor integrated circuit device, comprising: an internal logic circuit coupled to receive a first power supply voltage and which outputs a first output signal, one potential level of the first output signal representing said first power supply voltage; and an output circuit including a drive control circuit which is coupled to said internal logic circuit and to receive said first power supply voltage, and an output element which is coupled to said drive control circuit and to receive a second power supply voltage that is smaller than said first power supply voltage and which includes a push-pull type amplifier circuit comprising series-connected N-channel type MOSFETs, a second output signal being delivered from a common connected point of the series-connected N-channel type MOSFETs, one potential level of the second output signal representing said second power supply voltage, responsive to said first output signal.
Claim 3
Dependent Claim
43 words
A semiconductor integrated circuit device according to claim 1, wherein the potential level of said second output signal that represents said second power supply voltage is smaller than the potential level of said first output signal that represents said first power supply voltage.
Claim 4
Dependent Claim
90 words
A semiconductor integrated circuit device according to claim 5, wherein at least one of said drive control circuit and an internal circuit included in said internal logic circuit has a first conductivity-type MOSFET formed on a semiconductor substrate and a second conductivity-type MOSFET formed on a first well region on the semiconductor substrate, and wherein the series-connected N-channel type MOSFETs are second conductivity-type MOSFETs which are formed on a second well region on the semiconductor substrate, and wherein the second well region is electrically isolated from the first well region.
Claim 5
Dependent Claim
33 words
A semiconductor integrated circuit device according to claim 3, wherein each of said first conductivity-type MOSFETs is a P-channel type MOSFET and each of said second conductivity-type MOSFETs is an N-channel type MOSFET.
Claim 6
Dependent Claim
83 words
A semiconductor integrated circuit device according to claim 2, wherein at least one of said drive control circuit and an internal circuit included in said internal logic circuit has a first conductivity-type MOSFET formed on a semiconductor substrate and a second conductivity-type MOSFET formed on a first well region on the semiconductor substrate, and wherein the series-connected N-channel type MOSFETs are formed on a second well region on the semiconductor substrate, the second well region being electrically isolated from the first well region.
Claim 7
Dependent Claim
31 words
A semiconductor integrated circuit device according to claim 5, wherein said first conductivity-type MOSFET is a P-channel type MOSFET and each of said second conductivity-type MOSFETs is an N-channel type MOSFET.
Claim 8
Dependent Claim
178 words
A semiconductor integrated circuit device, comprising: a first input circuit and a first output circuit; a second input circuit and a second output circuit; and an internal logic circuit responsive to signals received from said first and second input circuits for sending corresponding data conversion signals to the second and first output circuits, respectively, said first and second output circuits each including a drive control circuit for receiving the corresponding data conversion signal and for outputting a drive signal corresponding to the received data conversion signal; wherein said first input circuit and said first output circuit, said internal logic circuit, and the drive control circuit of said second output circuit are all operated by a first power supply voltage, and wherein said second output circuit further includes an output element that receives the drive signal from the drive control circuit of the second output circuit and outputs an output signal representing the level of the received drive signal, the output element being operated by a second power supply voltage that is lower than the first power supply voltage.
Claim 9
Dependent Claim
178 words
A semiconductor integrated circuit device, comprising: a first input circuit and a first output circuit; a second input circuit and a second output circuit; and an internal logic circuit responsive to signals received from said first and second input circuits for sending corresponding data conversion signals to the second and first output circuits, respectively, said first and second output circuits each including a drive control circuit for receiving the corresponding data conversion signal and for outputting a drive signal corresponding to the received data conversion signal; wherein said first input circuit and said first output circuit, said internal logic circuit, and the drive control circuit of said second output circuit are all operated by a first power supply voltage, and wherein said second output circuit further includes an output element that receives the drive signal from the drive control circuit of the second output circuit and outputs an output signal representing the level of the received drive signal, the output element being operated by a second power supply voltage that is lower than the first power supply voltage.
Claim 10
Dependent Claim
70 words
A semiconductor integrated circuit device according to claim 7, wherein said semiconductor integrated circuit device is composed of P-channel type MOSFETs formed over an N-type substrate and N-channel type MOSFETs formed in a P-type well region, and wherein the output element of the second output circuit for generating the output signal at a relatively low level is a push-pull circuit comprising N-channel type MOSFETs formed in an independent well region.
Claim 11
Dependent Claim
29 words
A semiconductor integrated circuit device according to claim 8, wherein the second output circuit receives the first power supply voltage and a reference voltage via independent internal wiring lines.
Claim 12
Dependent Claim
152 words
A semiconductor integrated circuit device according to claim 9, wherein the semiconductor integrated circuit device is formed on a semiconductor chip; wherein said second output circuit has at least two independent power supply wiring lines formed by suitably cutting a closed power supply wiring line along the outer periphery of the chip, said second output circuit being supplied with said first power supply voltage via one of the independent power supply wiring lines; wherein said closed power supply wiring line is equipped with a plurality of bonding pads; wherein said one of the independent power supply wiring lines is equipped with at least one bonding pad receiving the first power supply voltage to be supplied to said second output circuit; and wherein another of the independent power supply wiring lines is equipped with at least one bonding pad receiving the second power supply voltage to be supplied to said second output circuit.
References Cited (Backward Citations)
JPS5360188A
Cited
JPS57176585A
Cited
JPS57199250A
Cited
JPS61264747A
Cited
JPS6431438A
Cited
JPH0239455A
Cited
JPH0247843A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-02-06 | 1998-08-08 | 1999-02-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-02-06 | 2002-08-08 | 2003-02-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-02-06 | 2006-08-08 | 2007-02-07 | $7700.00 | Window Closed / Lapsed |