US5387459A
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Multilayer structure having an epitaxial metal electrode
Assignee: Eastman Kodak Co
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Filing: 1992-12-17
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Granted: 1995-02-07
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Expires: 2012-12-17
Abstract
Abstract A multilayer structure comprising in order: an oriented single crystal substrate, an epitaxial buffer layer, an epitaxial metal electrode, and an epitaxial metal oxide upper layer deposited on the metal electrode. The substrate is a semiconductor selected from the group consisting of Si compounds, Ge compounds, and compounds having at least one element selected from the group consisting of Al, Ga, and In and at least one element selected from the group consisting of N, P, As, and Sb.
Inventors
- 👤 Liang-Sun Hung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:12
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D62/00; H10D62/80; H10D62/82; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24917
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
108 words
A multilayer structure comprising in order: an oriented single crystal semiconductor substrate; an epitaxial buffer layer, wherein said buffer layer has a 1 to 1 sublattice mismatch to said semiconductor substrate of less than 15 percent, and said buffer layer defines a buffer layer superlattice dimension equal to 3 times the sublattice spacing of said buffer layer; an epitaxial metal electrode, wherein said metal electrode defines an electrode superlattice dimension equal to 4 times a sublattice spacing of said metal electrode, said metal electrode superlattice dimension being within 15 percent of said buffer layer superlattice dimension; and an epitaxial metal oxide upper layer deposited on said metal electrode.
Claim 2
Dependent Claim
108 words
A multilayer structure comprising in order: an oriented single crystal semiconductor substrate; an epitaxial buffer layer, wherein said buffer layer has a 1 to 1 sublattice mismatch to said semiconductor substrate of less than 15 percent, and said buffer layer defines a buffer layer superlattice dimension equal to 3 times the sublattice spacing of said buffer layer; an epitaxial metal electrode, wherein said metal electrode defines an electrode superlattice dimension equal to 4 times a sublattice spacing of said metal electrode, said metal electrode superlattice dimension being within 15 percent of said buffer layer superlattice dimension; and an epitaxial metal oxide upper layer deposited on said metal electrode.
Claim 3
Dependent Claim
70 words
The multilayer structure of claim 1, wherein said substrate is doped or undoped and comprises at least one material selected from the group consisting of Si compound, Ge compounds, and compounds having (i) and (ii), wherein (i) is at least one element selected from the group consisting of Al, Ga and In and (ii) is at least one element selected from the group consisting of N, P, As, and Sb.
Claim 4
Dependent Claim
17 words
The multilayer structure of claim 1, wherein said semiconductor substrate has a (111 ) or (100) orientation.
Claim 5
Dependent Claim
18 words
The multilayer structure of claim 1, wherein said buffer layer comprises alkaline earth metal fluoride or metal oxide.
Claim 6
Dependent Claim
36 words
The multilayer structure of claim 4, wherein said buffer layer comprises a material selected from the group consisting of BaF 2 and Ca x Sr 1-x F 2 , where x ranges from 0 to 1.
Claim 7
Dependent Claim
25 words
The multilayer structure of claim 4, wherein said buffer layer comprises a material selected from the group consisting of CeO 2 and ZrO 2 .
Claim 8
Dependent Claim
26 words
The multilayer structure of claim 1, wherein said metal electrode comprises at least one material selected from the group consisting of Pd, Pt, Au, and Ag.
Claim 9
Dependent Claim
30 words
The multilayer structure of claim 7, wherein said metal electrode comprises a Pd electrode layer deposited on said buffer layer and a Pt electrode layer deposited on said Pd layer.
Claim 10
Dependent Claim
32 words
The multilayer structure of claim 1, wherein said metal electrode comprises a material selected from the group consisting of CoPt 3 , AuPt 3 , Ag 3 Pt, and Au 3 Pt.
Claim 11
Dependent Claim
69 words
The multilayer structure of claim 9, wherein said upper layer comprises a material selected from the group consisting of SrTiO 3 , BaTiO 3 , PbTiO 3 , KNbO 3 , KTa 0 .35 Nb 0 .65 O 3 , Ba 0 .25 Sr 0 .75 Nb 2 O 6 , and PbLa x Zr y Ti 1- (x+y) O 3 , where x+y ranges from 0 to 1.
Claim 12
Dependent Claim
18 words
The multilayer structure of claim 1, wherein said single crystal semiconductor substrate has a zinc blend crystal structure.
Claim 13
Dependent Claim
17 words
The multilayer structure of claim 1, wherein said single crystal semiconductor substrate has a diamond crystal structure.
Claim 14
Dependent Claim
17 words
The multilayer structure of claim 1, wherein said semiconductor substrate comprises a compound selected from Group IVa.
Claim 15
Dependent Claim
11 words
The multilayer structure of claim 13, wherein said compound comprises Si.
Claim 16
Dependent Claim
11 words
The multilayer structure of claim 13, wherein said compound comprises Ge.
Claim 17
Dependent Claim
30 words
The multilayer structure of claim 1, wherein said semiconductor substrate comprises a compound having at least one element selected from Group IIIa and at least one element from Group Va.
Claim 18
Dependent Claim
105 words
A multilayer structure comprising in order: an oriented single crystal semiconductor substrate, wherein said substrate defines a substrate superlattice dimension equal to 3 times the sublattice spacing of said substrate; an epitaxial buffer layer, wherein said buffer layer defines a buffer layer superlattice dimension equal to 4 times a sublattice spacing of said buffer layer, said buffer layer superlattice dimension being within 15 percent of said substrate superlattice dimension; an epitaxial metal electrode, wherein said metal electrode has a 1 to 1 sublattice mismatch to said buffer layer of less than 15 percent; and an epitaxial metal oxide upper layer deposited on said metal electrode.
Claim 19
Dependent Claim
105 words
A multilayer structure comprising in order: an oriented single crystal semiconductor substrate, wherein said substrate defines a substrate superlattice dimension equal to 3 times the sublattice spacing of said substrate; an epitaxial buffer layer, wherein said buffer layer defines a buffer layer superlattice dimension equal to 4 times a sublattice spacing of said buffer layer, said buffer layer superlattice dimension being within 15 percent of said substrate superlattice dimension; an epitaxial metal electrode, wherein said metal electrode has a 1 to 1 sublattice mismatch to said buffer layer of less than 15 percent; and an epitaxial metal oxide upper layer deposited on said metal electrode.
Claim 20
Dependent Claim
70 words
The multilayer structure of claim 17, wherein said substrate is doped or undoped and comprises at least one material selected from the group consisting of Si compound, Ge compounds, and compounds having (i) and (ii), wherein (i) is at least one element selected from the group consisting of Al, Ga and In and (ii) is at least one element selected from the group consisting of N, P, As, and Sb.
Claim 21
Dependent Claim
16 words
The multilayer structure of claim 17, wherein said semiconductor substrate has a (111) or (100) orientation.
Claim 22
Dependent Claim
13 words
The multilayer structure of claim 17, wherein said buffer layer comprises metal oxide.
Claim 23
Dependent Claim
24 words
The multilayer structure of claim 20, wherein said buffer layer comprises a material selected from the group consisting of MgO and SrTiO 3 .
Claim 24
Dependent Claim
26 words
The multilayer structure of claim 17, wherein said metal electrode comprises at least one material selected from the group consisting of Pd, Pt, Au, and Ag.
Claim 25
Dependent Claim
30 words
The multilayer structure of claim 22, wherein said metal electrode comprises a Pd electrode layer deposited on said buffer layer and a Pt electrode layer deposited on said Pd layer.
Claim 26
Dependent Claim
32 words
The multilayer structure of claim 17, wherein said metal electrode comprises a material selected from the group consisting of CoPt 3 , AuPt 3 , Ag 3 Pt, and Au 3 Pt.
Claim 27
Dependent Claim
68 words
The multilayer structure of claim 17, wherein upper layer comprises a material selected from the group consisting of SrTiO 3 , BaTiO 3 , PbTiO 3 , KNbO 3 , KTa 0 .35 Nb 0 .65 O 3 , Ba 0 .25 Sr 0 .75 Nb 2 O 6 , and PbLa x Zr y Ti 1- (x+y) O 3 , where x+y ranges from 0 to 1.
Claim 28
Dependent Claim
18 words
The multilayer structure of claim 17, wherein said single crystal semiconductor substrate has a zinc blend crystal structure.
Claim 29
Dependent Claim
17 words
The multilayer structure of claim 17, wherein said single crystal semiconductor substrate has a diamond crystal structure.
Claim 30
Dependent Claim
17 words
The multilayer structure of claim 17, wherein said semiconductor substrate comprises a compound selected from Group IVa.
Claim 31
Dependent Claim
11 words
The multilayer structure of claim 28, wherein said compound comprises Si.
Claim 32
Dependent Claim
11 words
The multilayer structure of claim 28, wherein said compound comprises Ge.
Claim 33
Dependent Claim
30 words
The multilayer structure of claim 17, wherein said semiconductor substrate comprises a compound having at least one element selected from Group IIIa and at least one element from Group Va.
References Cited (Backward Citations)
US4260663A
Cited
US4490429A
Cited
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