Abstract An object of the subject invention is to offer a MOS semiconductor device capable of suppressing hot carrier degradation, improving driving capabilities and also enabling miniaturization to the submicron region and smaller; and methods for its fabrication. By forming the gate electrode 5 through the medium of gate oxide film 4 on one main surface of the first conductivity type semiconductor substrate 1 between the second conductivity type low concentration diffusion layers 3, the effective channel length is made roughly equal to the gate length, and miniaturization to the submicron region and smaller is accomplished. Also, by forming the second conductivity type diffusion layer 7A on the sides of the gate electrode 5 through the medium of the thin insulating film 6 to be above the low concentration diffusion layer 3 and further contacting the low concentration diffusion layer 3, the high electrical field within the low concentration diffusion layer 3 is sufficiently ameliorated, generation of hot carriers is suppressed, and resistance to degradation is improved. Moreover, by controlling the high resistance second conductivity typetype diffusion layer 7 A at the sides of the gate electrode 5, the source resistance is decreased and driving capabilities are improved. At the same time the contact region of the source-drain electrode is miniaturized.
A MOS semiconductor device comprising: a semiconductor substrate of a first conductivity type and having a main surface; two high concentration source-drain diffusion regions of a second conductivity type formed on the main surface of the semiconductor substrate, each one of said two high concentration source-drain diffusion regions having a side; two low concentration diffusion regions of the second conductivity type contacting the main surface of the semiconductor substrate between the source-drain diffusion regions, each one of said two low concentration diffusion regions contacting the side of a respective one of the source-drain diffusion regions; a gate insulating film formed on the main surface between the two low concentration diffusion regions; a gate electrode formed on the gate insulating film, the gate electrode having two sides; a thin insulating film formed on the sides of the gate electrode; and two sidewall regions of the second conductivity type formed on the respective sides of the gate electrode above and directly in contact with the low concentration diffusion regions and free of any other material between the two sidewall regions and the low concentration diffusion regions.
Claim 2
Dependent Claim
184 words
A MOS semiconductor device comprising: a semiconductor substrate of a first conductivity type and having a main surface; two high concentration source-drain diffusion regions of a second conductivity type formed on the main surface of the semiconductor substrate, each one of said two high concentration source-drain diffusion regions having a side; two low concentration diffusion regions of the second conductivity type contacting the main surface of the semiconductor substrate between the source-drain diffusion regions, each one of said two low concentration diffusion regions contacting the side of a respective one of the source-drain diffusion regions; a gate insulating film formed on the main surface between the two low concentration diffusion regions; a gate electrode formed on the gate insulating film, the gate electrode having two sides; a thin insulating film formed on the sides of the gate electrode; and two sidewall regions of the second conductivity type formed on the respective sides of the gate electrode above and directly in contact with the low concentration diffusion regions and free of any other material between the two sidewall regions and the low concentration diffusion regions.
Claim 3
Dependent Claim
14 words
A MOS semiconductor device of claim 1, wherein the sidewall regions have low concentration.