US5381125A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Spinodally decomposed magnetoresistive devices
Assignee: AT&T Inc
•
Filing: 1993-07-20
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Granted: 1995-01-10
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Expires: 2013-07-20
Abstract
Abstract A magnetoresistive medium for sensing magnetic fields is formed by a metallic alloy that contains spinodally decomposed ferromagnetic particles having at least one thickness dimension equal to or less than approximately 0.01 mu m.
Inventors
- 👤 Li-Han Chen
- 👤 Sungho Jin
- 👤 Thomas H. Tiefel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 09:21
CPC Classifications
H; H10; H10N; H10N50/00; H10N50/10
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
54 words
A magnetoresistive device comprising a magnetoresistor for sensing magnetic fields, the magnetoresistor being a metallic alloy medium in which there are embedded an effective number of spinodally decomposed ferromagnetic particles each having at least one dimension equal to or less than approximately 0.01 μm, whereby the magnetoresistance of the alloy medium is significantly enhanced.
Claim 2
Dependent Claim
54 words
A magnetoresistive device comprising a magnetoresistor for sensing magnetic fields, the magnetoresistor being a metallic alloy medium in which there are embedded an effective number of spinodally decomposed ferromagnetic particles each having at least one dimension equal to or less than approximately 0.01 μm, whereby the magnetoresistance of the alloy medium is significantly enhanced.
Claim 3
Dependent Claim
22 words
The device of claim 1 in which the particles have at least two dimensions equal to or less than approximately 0.01 μm.
Claim 4
Dependent Claim
15 words
The device of claim 2 in which the alloy medium comprises copper, nickel, and iron.
Claim 5
Dependent Claim
15 words
The device of claim 2 in which the alloy medium comprises copper, nickel, and cobalt.
Claim 6
Dependent Claim
15 words
The device of claim 2 in which the alloy medium comprises aluminum, iron, and nickel.
Claim 7
Dependent Claim
14 words
The device of claim 2 in which the alloy medium comprises iron and chromium.
Claim 8
Dependent Claim
15 words
The device of claim 2 in which the alloy medium comprises iron, chromium, and cobalt.
Claim 9
Dependent Claim
16 words
The device of claim 2 in which the alloy medium comprises aluminum, nickel, cobalt, and iron.
Claim 10
Dependent Claim
15 words
The device of claim 1 in which the alloy medium comprises copper, nickel, and iron.
Claim 11
Dependent Claim
15 words
The device of claim 1 in which the alloy medium comprises copper, nickel, and cobalt.
Claim 12
Dependent Claim
15 words
The device of claim 1 in which the alloy medium comprises aluminum, iron, and nickel.
Claim 13
Dependent Claim
14 words
The device of claim 1 in which the alloy medium comprises iron and chromium.
Claim 14
Dependent Claim
15 words
The device of claim 1 in which the alloy medium comprises iron, chromium, and cobalt.
Claim 15
Dependent Claim
16 words
The device of claim 1 in which the alloy medium comprises aluminum, nickel, cobalt, and iron.
Claim 16
Dependent Claim
23 words
The device of claim 1 in which the alloy medium has first and second perpendicular dimensions in a ratio of at least two.
Claim 17
Dependent Claim
15 words
The device of claim 1 in which the dimension is less than approximately 0.005 μm.
Claim 18
Dependent Claim
20 words
The device of claim 1, 2, 15, or 16 further comprising a source of electrical current connected to the medium.
Claim 19
Dependent Claim
14 words
The device of claim 17 further comprising a voltage sensor connected to the medium.
Claim 20
Dependent Claim
33 words
An array of magnetoresistive devices each in accordance with claim 1, 2, 15, or 16, each of the magnetoresistors in the nearest neighboring devices being located at a prescribed distance from one another.
Claim 21
Dependent Claim
17 words
A magnetoresistive device in accordance with claim 18 in which the voltage sensor comprises an integrated circuit.
Claim 22
Dependent Claim
37 words
An array of magnetoresistive devices, each in accordance with claim 20, whereby an assembly of such devices is formed, each of the magnetoresistors in the nearest neighboring devices being located at a prescribed distance from one another.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-01-09 | 1998-07-11 | 1999-01-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-01-09 | 2002-07-11 | 2003-01-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-01-09 | 2006-07-11 | 2007-01-10 | $7700.00 | Window Closed / Lapsed |