US5379255A
Expired / Lapsed
US
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Three dimensional famos memory devices and methods of fabricating
Assignee: Texas Instruments Inc
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Filing: 1992-12-14
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Granted: 1995-01-03
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Expires: 2012-12-14
Abstract
Abstract Memory cell transistors are provided in which pillar structures or column structures (12, 12a, 14, and 14a) are formed at the face of a semiconductor substrate (10). Floating gates (46) and control gates (52) are formed adjacent to the pillar structures or column structures (12, 12a, 14, and 14a). The floating gates (46) and control gates (52) are insulatively disposed by gate oxide layer (42) and insulating layer (50). Source regions (36, 40, and 48) are implanted in the semiconductor substrate (10). Drain regions (38) are also implanted in the pillar structures or column structures (12, 12a, 14 and 14a).
Inventors
- 👤 Pradeep L. Shah
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 00:46
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/20; H10B41/23; H10B41/27; H10B69/00; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/683; H10D30/684; H10D30/685
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
154 words
A method of forming a memory cell at a semiconductor layer of a first conductivity type, comprising the steps of: etching the semiconductor layer to form an elongate column structure, the elongate column structure having a base at a face of the semiconductor layer and further having sidewalls; implanting a source region into the face with a dopant to be of a second conductivity type opposite the first conductivity type; implanting a drain region into the elongate column structure with a dopant to be of a second conductivity type opposite the first conductivity type to define a channel area extending between the source and drain regions and within the elongate column structure; forming a floating gate on a portion of one of the sidewalls of the elongate column structure, the floating gate insulatively disposed over at least a part of the channel area; and forming a control gate insulatively disposed adjacent the floating gate.
Claim 2
Independent Claim
154 words
A method of forming a memory cell at a semiconductor layer of a first conductivity type, comprising the steps of: etching the semiconductor layer to form an elongate column structure, the elongate column structure having a base at a face of the semiconductor layer and further having sidewalls; implanting a source region into the face with a dopant to be of a second conductivity type opposite the first conductivity type; implanting a drain region into the elongate column structure with a dopant to be of a second conductivity type opposite the first conductivity type to define a channel area extending between the source and drain regions and within the elongate column structure; forming a floating gate on a portion of one of the sidewalls of the elongate column structure, the floating gate insulatively disposed over at least a part of the channel area; and forming a control gate insulatively disposed adjacent the floating gate.
Claim 3
Dependent Claim
20 words
The method of claim 1, wherein said control gate is formed in a direction perpendicular to said elongate column structure.
Claim 4
Dependent Claim
16 words
The method of claim 1, wherein said source region is a part of a source line.
Claim 5
Dependent Claim
16 words
The method of claim 1, wherein said drain region is a part of a bit line.
Claim 6
Dependent Claim
16 words
The method of claim 2, wherein said control gate is a part of a row line.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-01-02 | 1998-07-04 | 1999-01-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-01-02 | 2002-07-04 | 2003-01-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-01-02 | 2006-07-04 | 2007-01-03 | $7700.00 | Window Closed / Lapsed |