US5377136A
Expired / Lapsed
US
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Semiconductor integrated circuit device with built-in memory circuit group
Assignee: Hitachi Microcomputer System Ltd
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Filing: 1993-06-15
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Granted: 1994-12-27
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Expires: 2013-06-15
Abstract
Abstract A semiconductor integrated circuit device with a built-in memory circuit group is disclosed, wherein wiring is started from a data terminal position near a data exchange portion of a memory circuit group to reduce the length of a wiring. Accordingly, an operation speed can be improved by the reduction of wiring capacitance and a ratio of unwired wirings can be reduced by reduction of an occupying ratio of wiring channels.
Inventors
- 👤 Yoji Nishio
- 👤 Fumio Murabayashi
- 👤 Shoichi Kotoku
- 👤 Akira Uragami
- 👤 Manabu Shibata
- 👤 Yoshitatsu Kojima
- 👤 Fumiaki Matsuzaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 08:30
CPC Classifications
G; G11; G11C; G11C8/00; G11C8/16; G11C5/00; G11C5/06; G11C5/063
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
203 words
A semiconductor device formed on a semiconductor substrate, comprising: a memory having a plurality of memory cells, formed at a predetermined portion of said substrate; a basic cell region formed at another predetermined portion of said semiconductor substrate adjacent to a predetermined side of said memory; a first input/output port having a plurality of terminals, located at said predetermined side of said memory to permit coupling of said memory to said basic cell region and to a predetermined element other than said basic cell region; and a second input/output port having a plurality of terminals, located on another side of said memory to permit coupling of said memory to said basic cell region and said predetermined element other than said basic cell region, wherein both said first and second input/output ports are accessible to all of said plurality of memory cells, and wherein each data input/output operation from said memory cells of said memory to said basic cell region or said predetermined element is made using either said first or second ports based upon a determination of which of said first and second ports is nearer to said basic cell region or said predetermined element which is used for the data input/output operation.
Claim 2
Dependent Claim
203 words
A semiconductor device formed on a semiconductor substrate, comprising: a memory having a plurality of memory cells, formed at a predetermined portion of said substrate; a basic cell region formed at another predetermined portion of said semiconductor substrate adjacent to a predetermined side of said memory; a first input/output port having a plurality of terminals, located at said predetermined side of said memory to permit coupling of said memory to said basic cell region and to a predetermined element other than said basic cell region; and a second input/output port having a plurality of terminals, located on another side of said memory to permit coupling of said memory to said basic cell region and said predetermined element other than said basic cell region, wherein both said first and second input/output ports are accessible to all of said plurality of memory cells, and wherein each data input/output operation from said memory cells of said memory to said basic cell region or said predetermined element is made using either said first or second ports based upon a determination of which of said first and second ports is nearer to said basic cell region or said predetermined element which is used for the data input/output operation.
Claim 3
Dependent Claim
42 words
A semiconductor device according to claim 1, wherein said data input/output operation from said memory cells of said memory to said basic cell region is made using said first port which is nearer to said basic cell region than said second port.
Claim 4
Dependent Claim
40 words
A semiconductor device according to claim 1, wherein said data input/output operation from said memory cells of said memory to said predetermined element is made using said second port which is nearer to said predetermined element than said first port.
Claim 5
Dependent Claim
15 words
A semiconductor device according to claim 1, wherein said predetermined element comprises an input/output buffer.
Claim 6
Dependent Claim
23 words
A semiconductor device according to claim 1, wherein said another side of said memory is adjacent to said predetermined side of said memory.
Claim 7
Dependent Claim
23 words
A semiconductor device according to claim 1, wherein said another side of said memory is adjacent to said predetermined side of said memory.
Claim 8
Dependent Claim
204 words
A semiconductor device formed on a semiconductor substrate, comprising: a memory having a number of cells, formed at a predetermined portion of said substrate; a basic cell region formed at another predetermined portion of said semiconductor substrate adjacent to a predetermined side of said memory; a first input/output port having a plurality of terminals, located at said predetermined side of said memory to couple said memory to said basic cell region; and a second input/output port having a plurality of terminals, located on another side of said memory to couple said memory to a predetermined element other than said basic cell region, wherein both said first and second input/output ports are accessible to all of said plurality of said memory cells, wherein each data input/output operation from said memory cells of said memory to said basic cell region is made using said first input/output port, wherein each data input/output operation from said memory cells of said memory to said predetermined element is made using said second input/output port, wherein said basic cell region is closer to said first input/output port than to said second input/output port, and wherein said predetermined element is closer to said second input/output port than to said first input/output port.
Claim 9
Dependent Claim
204 words
A semiconductor device formed on a semiconductor substrate, comprising: a memory having a number of cells, formed at a predetermined portion of said substrate; a basic cell region formed at another predetermined portion of said semiconductor substrate adjacent to a predetermined side of said memory; a first input/output port having a plurality of terminals, located at said predetermined side of said memory to couple said memory to said basic cell region; and a second input/output port having a plurality of terminals, located on another side of said memory to couple said memory to a predetermined element other than said basic cell region, wherein both said first and second input/output ports are accessible to all of said plurality of said memory cells, wherein each data input/output operation from said memory cells of said memory to said basic cell region is made using said first input/output port, wherein each data input/output operation from said memory cells of said memory to said predetermined element is made using said second input/output port, wherein said basic cell region is closer to said first input/output port than to said second input/output port, and wherein said predetermined element is closer to said second input/output port than to said first input/output port.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-26 | 1998-06-27 | 1998-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-26 | 2002-06-27 | 2002-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-26 | 2006-06-27 | 2006-12-27 | $7700.00 | Window Closed / Lapsed |