US5376942A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Receiving device with separate substrate surface
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1992-08-12
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Granted: 1994-12-27
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Expires: 2012-08-12
Abstract
Abstract A plane antenna 2 and a receiving circuit 5 are formed on one and the same semiconductor substrate 1. Both can be connected by a microstrip line 7, and so on. Resultantly the receiving device as a whole can be small-sized and light. Furthermore, the plane antenna, the receiving circuit, and the microstrip line can be integrated by the common IC process, and the fabrication cost can be drastically reduced.
Inventors
- 👤 Nobuo Shiga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 17:34
CPC Classifications
H; H01; H01Q; H01Q21/00; H01Q21/06; H01Q21/061; H01Q21/065; H01Q1/00; H01Q1/12; H01Q1/22; H01Q1/24; H01Q1/247; H01Q21/0087; H01Q21/0093
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
46 words
A microwave receiving device, comprising: a semiconductor substrate; a plane antenna including an antenna element formed on said semiconductor substrate; a compound semiconductor layer formed on said semiconductor substrate; and a receiving circuit formed on said compound semiconductor layer and electrically connected to said plane antenna.
Claim 2
Dependent Claim
46 words
A microwave receiving device, comprising: a semiconductor substrate; a plane antenna including an antenna element formed on said semiconductor substrate; a compound semiconductor layer formed on said semiconductor substrate; and a receiving circuit formed on said compound semiconductor layer and electrically connected to said plane antenna.
Claim 3
Dependent Claim
16 words
A microwave receiving device according to claim 1, wherein said semiconductor substrate is a silicon substrate.
Claim 4
Dependent Claim
64 words
A microwave receiving device according to claim 2, wherein said compound semiconductor layer has been crystal-grown at a region on a surface of said silicon substrate; said receiving circuit has been formed on said compound semiconductor layer; and said antenna element has been formed on a region of said silicon substrate other than said region on which said compound semiconductor layer has been formed.
Claim 5
Dependent Claim
22 words
A microwave receiving device according to claim 2, wherein said plane antenna and said receiving circuit are connected by a microstrip line.
Claim 6
Dependent Claim
26 words
A microwave receiving device according to claim 2, wherein said receiving circuit includes a low-noise amplifying circuit for amplifying a signal received by said plane antenna.
Claim 7
Dependent Claim
30 words
A microwave receiving device according to claim 5, wherein said receiving circuit includes a frequency converting circuit for down-converting a frequency of an output signal of said low-noise amplifying circuit.
Claim 8
Dependent Claim
88 words
A microwave receiving device comprising: a semiconductor substrate; a plane antenna including an antenna element formed on a first predetermined portion of one surface of said semiconductor substrate; and a receiving unit formed on a compound semiconductor layer provided on a second predetermined portion of another surface of said semiconductor substrate and connected to said plane antenna through a via hole formed in said semiconductor substrate, said first and second predetermined portions being arranged so as not to face each other along plane parallel with said semiconductor substrate.
Claim 9
Dependent Claim
88 words
A microwave receiving device comprising: a semiconductor substrate; a plane antenna including an antenna element formed on a first predetermined portion of one surface of said semiconductor substrate; and a receiving unit formed on a compound semiconductor layer provided on a second predetermined portion of another surface of said semiconductor substrate and connected to said plane antenna through a via hole formed in said semiconductor substrate, said first and second predetermined portions being arranged so as not to face each other along plane parallel with said semiconductor substrate.
Claim 10
Dependent Claim
15 words
A microwave receiving device according to claim 7, wherein said semiconductor substrate is silicon substrate.
Claim 11
Dependent Claim
17 words
A microwave receiving device according to claim 7, wherein said compound semiconductor substrate is a GaAs substrate.
Claim 12
Dependent Claim
22 words
A microwave receiving device according to claim 7, wherein said plane antenna and said receiving circuit are connected by a microstrip line.
Claim 13
Dependent Claim
26 words
A microwave receiving device according to claim 7, wherein said receiving circuit includes a low-noise amplifying circuit for amplifying a signal received by said plane antenna.
Claim 14
Dependent Claim
30 words
A microwave receiving device according to claim 11, wherein said receiving circuit includes a frequency converting circuit for down-converting a frequency of an output signal of said low-noise amplifying circuit.
Claim 15
Dependent Claim
66 words
A microwave receiving device comprising: a semiconductor substrate; a plurality of plane antennas, each of said plane antennas including an antenna element formed on said semiconductor substrate; a compound semiconductor layer formed on said semiconductor substrate; and a plurality of low-noise amplifying circuits formed on said compound semiconductor layer, each of said low-noise amplifying circuits being connected to each of said plane antennas in one-to-one correspondence.
Claim 16
Dependent Claim
66 words
A microwave receiving device comprising: a semiconductor substrate; a plurality of plane antennas, each of said plane antennas including an antenna element formed on said semiconductor substrate; a compound semiconductor layer formed on said semiconductor substrate; and a plurality of low-noise amplifying circuits formed on said compound semiconductor layer, each of said low-noise amplifying circuits being connected to each of said plane antennas in one-to-one correspondence.
Claim 17
Dependent Claim
16 words
A microwave receiving device according to claim 13, wherein said semiconductor substrate is a silicon substrate.
Claim 18
Dependent Claim
63 words
A microwave receiving device according to claim 14, wherein said compound semiconductor layer has been crystal-grown at a region on a surface of said silicon substrate; said low-noise amplifying circuits are formed on said compound semiconductor layer; and said plane antennas are formed in a region of said silicon substrate other than said region where said compound semiconductor layer region has been formed.
Claim 19
Dependent Claim
85 words
A microwave receiving apparatus comprising: a dielectric substrate; a plurality of microwave receiving devices, each of said microwave receiving devices comprising: a semiconductor substrate mounted on said dielectric substrate; a plane antenna including an antenna element formed on said semiconductor substrate; a compound semiconductor layer mounted on said semiconductor substrate; a low-noise amplifying circuit formed on said compound semiconductor layer and connected to said plane antenna, and a microstrip line circuit formed on said dielectric substrate for connecting a plurality of said microwave receiving devices.
Claim 20
Dependent Claim
85 words
A microwave receiving apparatus comprising: a dielectric substrate; a plurality of microwave receiving devices, each of said microwave receiving devices comprising: a semiconductor substrate mounted on said dielectric substrate; a plane antenna including an antenna element formed on said semiconductor substrate; a compound semiconductor layer mounted on said semiconductor substrate; a low-noise amplifying circuit formed on said compound semiconductor layer and connected to said plane antenna, and a microstrip line circuit formed on said dielectric substrate for connecting a plurality of said microwave receiving devices.
Claim 21
Dependent Claim
16 words
A microwave receiving apparatus according to claim 16, wherein said semiconductor substrate is a silicon substrate.
Claim 22
Dependent Claim
65 words
A microwave receiving apparatus according to claim 17, wherein said compound semiconductor layer has been crystal-grown at a region on a surface of said silicon substrate; said low-noise amplifying circuits have been formed on said compound semiconductor layer; and said plane antenna has been formed in a region of said silicon substrate other than said region where said compound semiconductor layer region has been formed.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-26 | 1998-06-27 | 1998-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-26 | 2002-06-27 | 2002-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-26 | 2006-06-27 | 2006-12-27 | $7700.00 | Window Closed / Lapsed |