US5374835A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Field effect transistor using compound semiconductor
Assignee: Toshiba Corp
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Filing: 1993-05-20
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Granted: 1994-12-20
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Expires: 2013-05-20
Abstract
Abstract A compound semiconductor device such as HEMTs (High Electron Mobility Transistors), metal semiconductor field effect transistors, and the like includes a compound semiconductor substrate having an active region, an insulating film provided over the semiconductor substrate, source and drain electrodes provided on the active region, and a gate electrode located between the source and drain electrodes. In the structure, the gate electrode has a lower electrode portion for providing a Schottky barrier contact with the active region through an opening of the insulating film, and an upper electrode portion provided on the insulating film to extend toward only the drain electrode.
Inventors
- 👤 Kizashi Shimada
- 👤 Mayumi Kamura
- 👤 Tatsuo Akiyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 10:46
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/40; H10D30/47; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
126 words
A compound semiconductor device comprising: a compound semiconductor substrate having an active region; an insulating film on the active region; a recess having a bottom surface formed in the active region through an opening in the insulating film, a length of the bottom surface measured between the sidewalls of the recess substantially defining a gate length; source and drain electrodes on the active region; a gate electrode located between the source and drain electrodes, and including lower and upper gate electrode portions; the lower gate electrode portion having said gate length being in the recess of the active region to form a Schottky barrier contact with the active region, and the upper gate electrode portion on the insulating film and extending only toward the drain electrode.
Claim 2
Dependent Claim
126 words
A compound semiconductor device comprising: a compound semiconductor substrate having an active region; an insulating film on the active region; a recess having a bottom surface formed in the active region through an opening in the insulating film, a length of the bottom surface measured between the sidewalls of the recess substantially defining a gate length; source and drain electrodes on the active region; a gate electrode located between the source and drain electrodes, and including lower and upper gate electrode portions; the lower gate electrode portion having said gate length being in the recess of the active region to form a Schottky barrier contact with the active region, and the upper gate electrode portion on the insulating film and extending only toward the drain electrode.
Claim 3
Dependent Claim
27 words
The compound semiconductor device according to claim 1, wherein the upper gate electrode portion has an asymmetric cross-sectional shape with respect to the lower gate electrode portion.
Claim 4
Dependent Claim
19 words
The compound semiconductor device according to claim 2, wherein channel area formed under the recess of the active region.
References Cited (Backward Citations)
US4673960A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-12-19 | 1998-06-20 | 1998-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-19 | 2002-06-20 | 2002-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-19 | 2006-06-20 | 2006-12-20 | $7700.00 | Window Closed / Lapsed |