Semiconductor memory device having redundancy memory cells for replacing defective

Claim 2

A semiconductor memory device comprising: a memory cell having an address and a redundant memory cell, each having a select terminal and providing data read out; a main word line for said memory cell; a sub word line corresponding to said main word line and coupled to the select terminal of said memory cell; sub word drive means for driving said sub word line on the basis of a signal to be transmitted to said main word line and a sub word select signal; a redundant main word line for said redundant memory cell; a redundant sub word line corresponding to said redundant main word line and coupled to the select terminal of said redundant memory cell; redundant sub word line drive means for driving said redundant sub word line on the basis of a signal to be transmitted to said redundant main word line and a redundant select signal; address compare means for comparing the address of said memory cell and an input address to provide an output; redundant main word line drive means for maintaining said redundant main word line to a select level during a chip selecting state; and select means for selecting either of the data read out of said memory cell and the data read out of said redundant memory cell, on the basis of the output of said address compare means.

Claim 3

A semiconductor memory device according to claim 1, wherein said redundant main word line drive means sets said redundant main word line to the select level in accordance with a memory enable state.

Claim 4

A semiconductor memory device according to claim 2, wherein said select means includes: a first sense amplifier for receiving and amplifying the data read out of said memory cell; and a second sense amplifier for receiving and amplifying the data read out from said redundant memory cell, and wherein said first and second sense amplifiers are selectively driven.

Claim 5

A semiconductor memory device according to claim 2, wherein said select means includes: a first sense amplifier for receiving and amplifying the data read out of said memory cell; a second sense amplifier for receiving and amplifying the data read out from said redundant memory cell; and first and second data output buffers corresponding to said first and second sense amplifiers, respectively, and wherein said first and second data output buffers have their output terminals coupled to a data outputting single external terminal.

Claim 6

A semiconductor memory device according to claim 4, wherein said select means operates on the basis of both a first control signal for instructing which of a first memory mat containing said memory cell and a second memory mat containing said redundant memory cell is to be selected and a second control signal indicating the state in which said redundant sub word line is to be selected.

Claim 7

A semiconductor memory device comprising: a main word line; a sub word line corresponding to said main word line and coupled to the select terminal of a memory cell; sub word drive means for driving said sub word line on the basis of a signal to be transmitted to said main word line and a sub word select signal; a redundant main word line; a redundant sub word line corresponding to said redundant main word line and coupled to the select terminal of a redundant memory cell; redundant sub word line drive means for driving said redundant sub word line on the basis of a signal to be transmitted to said redundant main word line and a redundant select signal; address compare means for comparing the address of said memory cell and an input address; redundant main word line drive means for driving said redundant main word line to a select level not depending upon the output of said address compare means; select means for selecting either of the data read out of said memory cell and the data read out of said redundant memory cell, on the basis of the output of said address compare means; wherein said redundant main word line drive means sets said redundant main word line to the select level in accordance with a memory enable state; wherein said select means includes: a first sense amplifier for receiving and amplifying the data read out of said memory cell; a second sense amplifier for receiving and amplifying the data read out from said redundant memory cell; and first and second data output buffers corresponding to said first and second sense amplifiers, respectively, and wherein said first and second data output buffers have their output terminals coupled to a data outputting single external terminal; wherein said select means operates on the basis of both a first control signal for instructing which of a first memory mat containing said memory cell and a second memory mat containing said redundant memory cell is to be selected and a second control signal indicating the state in which said redundant sub word line is to be selected; and a plurality of externally connected electrodes which are disposed at the center portion of a semiconductor substrate and across which are arranged said first memory mat and said second memory mat; wherein said redundant main and sub word lines are arranged in parallel to the center portion on which said plurality of externally connected electrodes are disposed; and wherein data lines are disposed perpendicular to said redundant main and sub word lines.

Claim 8

A semiconductor memory device comprising: a main word line; a sub word line corresponding to said main word line and coupled to the select terminal of a memory cell; sub word drive means for driving said sub word line on the basis of a signal to be transmitted to said main word line and a sub word select signal; a redundant main word line; a redundant sub word line corresponding to said redundant main word line and coupled to the select terminal of a redundant memory cell; redundant sub word line drive means for driving said redundant sub word line on the basis of a signal to be transmitted to said redundant main word line and a redundant select signal; address compare means for comparing the address of said memory cell and an input address; redundant main word line drive means for driving said redundant main word line to a select level not depending upon the output of said address compare means; select means for selecting either of the data read out of said memory cell and the data read out of said redundant memory cell, on the basis of the output of said address compare means; wherein said redundant main word line drive means sets said redundant main word line to the select level in accordance with a memory enable state; wherein said select means includes: a first sense amplifier for receiving and amplifying the data read out of said memory cell; a second sense amplifier for receiving and amplifying the data read out from said redundant memory cell; and first and second data output buffers corresponding to said first and second sense amplifiers, respectively, and wherein said first and second data output buffers have their output terminals coupled to a data outputting single external terminal; wherein said select means operates on the basis of both a first control signal for instructing which of a first memory mat containing said memory cell and a second memory mat containing said redundant memory cell is to be selected and a second control signal indicating the state in which said redundant sub word line is to be selected; and a plurality of externally connected electrodes which are disposed at the center portion of a semiconductor substrate and across which are arranged said first memory mat and said second memory mat; wherein said redundant main and sub word lines are arranged in parallel to the center portion on which said plurality of externally connected electrodes are disposed; and wherein data lines are disposed perpendicular to said redundant main and sub word lines.

Claim 9

A semiconductor memory device according to claim 6, wherein the redundant memory cells contained in said first memory mat and said second memory mat are arranged relatively close to said externally connected electrodes.

Claim 10

A semiconductor memory device, comprising: a plurality of main memory cells, each having an address, and a plurality of redundant memory cells, each of said main memory cells and said redundant memory cells having a select terminal and providing data read out; a main word line for said plurality of main memory cells; a plurality of sub word lines corresponding to said main word line and respectively coupled to the select terminals of different groupings of said main memory cells; main word line drive means for driving said main word line to a select level; a plurality of sub word drive means for respectively driving said sub word lines to a select level on the basis of a sub word select signal; a redundant main word line for said redundant memory cells; a plurality of redundant sub word lines corresponding to said redundant main word line and coupled to the select terminals of said redundant memory cells, respectively; program means settable to logically replace a defective one of said main memory cells with one of said redundant memory cells by providing a redundant memory cell select signal in response to an address for the defective one of said main memory cells; redundant sub word line drive means responsive to said redundant memory cell select signal for driving said redundant sub word lines to a select level, respectively; redundant main word line drive means for driving said redundant main word line to a select level substantially in parallel with the driving of said main word line driving means and independently of the redundant memory cell select signal; and select means for selecting the data read out of the one of said redundant memory cells in preference to the data read out of the defective one of said memory cells in response to the redundant memory cell select signal, so that the redundant main word line is driven to the select level without waiting for the redundant memory cell select signal.

Claim 11

A semiconductor memory device, comprising: a plurality of main memory cells, each having an address, and a plurality of redundant memory cells, each of said main memory cells and said redundant memory cells having a select terminal and providing data read out; a main word line for said plurality of main memory cells; a plurality of sub word lines corresponding to said main word line and respectively coupled to the select terminals of different groupings of said main memory cells; main word line drive means for driving said main word line to a select level; a plurality of sub word drive means for respectively driving said sub word lines to a select level on the basis of a sub word select signal; a redundant main word line for said redundant memory cells; a plurality of redundant sub word lines corresponding to said redundant main word line and coupled to the select terminals of said redundant memory cells, respectively; program means settable to logically replace a defective one of said main memory cells with one of said redundant memory cells by providing a redundant memory cell select signal in response to an address for the defective one of said main memory cells; redundant sub word line drive means responsive to said redundant memory cell select signal for driving said redundant sub word lines to a select level, respectively; redundant main word line drive means for driving said redundant main word line to a select level substantially in parallel with the driving of said main word line driving means and independently of the redundant memory cell select signal; and select means for selecting the data read out of the one of said redundant memory cells in preference to the data read out of the defective one of said memory cells in response to the redundant memory cell select signal, so that the redundant main word line is driven to the select level without waiting for the redundant memory cell select signal.

Claim 12

A semiconductor memory device according to claim 8, wherein said select means include data output buffers respectively assigned to said main memory cells and said redundant memory cells and being activated to select either the data read out of the defective one of said main memory cells or the data read out of the one of said redundant memory cells.

Claim 13

A semiconductor memory device according to claim 8, further including a common output buffer shared by said main memory cells and said redundant memory cells; and wherein said select means includes a plurality of sense amplifiers between said common output buffer and each of said main memory cells and said redundant memory cells, respectively, and said sense amplifiers being selectively activated to select the data read out.

Claim 14

A semiconductor memory device according to claim 8, constructed entirely on a single chip and including a plurality of data input output bonding pads; and wherein said redundant memory cells are arranged closer to said bonding pads than said main memory cells so that a transmission passage of the data read out from the redundant memory cells is shorter than the longest transmission passage of the data read out from the main memory cells.

Claim 15

A semiconductor memory device according to claim 8, wherein said main memory cells and redundant memory cells are divided into a plurality of memory array areas, with each memory array area including a plurality of main memory cells and a plurality of redundant memory cells; each memory array area having a main word line, a redundant main word line, a plurality of sub word lines, and a plurality of redundant sub word lines; and said program means assigning a redundant memory cell of one memory array area to the address of a defective memory cell of only another memory array area.

Claim 16

A semiconductor memory device according to claim 12, wherein within each memory array area a main memory cell and a redundant memory cell are commonly connected with complimentary bit lines.

Claim 17

A semiconductor memory device according to claim 8, wherein said program means includes a plurality of fuses selectively cuttable to program.

Claim 18

A semiconductor memory device according to claim 12, constructed entirely on a single chip and including a plurality of data input output bonding pads; and wherein said redundant memory cells are arranged closer to said bonding pads than said main memory cells so that a transmission passage of the data read out from the redundant memory cells is shorter than the longest transmission passage of the data read out from the main memory cells.

Claim 19

A semiconductor memory device according to claim 13, wherein said program means includes a plurality of fuses selectively cuttable to program.

Claim 20

A semiconductor memory device according to claim 13, further including a common output buffer shared by said main memory cells and said redundant memory cells; and wherein said select means includes a plurality of sense amplifiers between said common output buffer and each of said main memory cells and said redundant memory cells, respectively, and said sense amplifiers being selectively activated to select the data read out.

Claim 21

A semiconductor memory device according to claim 13, constructed entirely on a single chip and including a plurality of data input output bonding pads; and wherein said redundant memory cells are arranged closer to said bonding pads than said main memory cells so that a transmission passage of the data read out from the redundant memory cells is shorter than the longest transmission passage of the data read out from the main memory cells.

Claim 22

A semiconductor memory device according to claim 13, wherein said select means include data output buffers respectively assigned to said main memory cells and said redundant memory cells and being activated to select either the data read out of the defective one of said main memory cells or the data read out of the one of said redundant memory cells.

Claim 23

A semiconductor memory device according to claim 16, constructed entirely on a single chip and including a plurality of data input output bonding pads; and wherein said redundant memory cells are arranged closer to said bonding pads than said main memory cells so that a transmission passage of the data read out from the redundant memory cells is shorter than the longest transmission passage of the data read out from the main memory cells.