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US5372647A Expired / Lapsed US ⏱️ 0.0 years remaining

Apparatus for forming thin film

Assignee: Foundation for Advancement of International Science
•
Filing: 1991-12-27
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Granted: 1994-12-13
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Expires: 2011-12-27
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Abstract

Abstract An apparatus for forming a thin film without spoiling contact resistances and breakdown voltage characteristics. The apparatus is so designed that at least one of first, second and third transferring means are kept in an atmosphere of an inert gas or of air of 10 ppb or less in moisture concentration, the first means being for transferring semiconductor substrate bodies from a device for exposing the surfaces of semiconductor substrate bodies to a device for forming conductive thin films on the exposed surfaces, the second means being for transferring substrate bodies from the device for exposing the surface of substrate bodies to a device for forming thermaloxidation films on the exposed surfaces, and the third means being for transferring substrate bodies from a device for exposing the surfaces of metallic wirings formed on substrate bodies to a device for forming a conductive thin film on the surfaces of the metallic wirings.

Inventors

  • 👤 Tadahiro Ohmi

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 05:00
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; C; C23; C23C; C23C8/00; C23C8/06; C23C8/08; C23C8/10; H10W; H10W20/00; H10W20/01

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 141 words
An apparatus for forming a thin film, wherein a first transferring means for transferring semiconductor substrate bodies from a device for exposing surfaces of said semiconductor substrates to a device for forming conductive thin films on exposed surfaces, a second transferring means for transferring semiconductor substrate bodies from said device for exposing surfaces of semiconductor substrate bodies to a device for forming thermal oxidation films on exposed surfaces, and a third transferring means for transferring substrate bodies from a device for exposing surfaces of metallic wirings formed on said substrate bodies to a device for forming a conductive thin film on surfaces of said metallic wirings, are provided, and at least 1 of said first, second, and third transferring means are maintained in an atmosphere of an inert gas or of air having a moisture concentration of 10 ppb or less.
Claim 2
Independent Claim 141 words
An apparatus for forming a thin film, wherein a first transferring means for transferring semiconductor substrate bodies from a device for exposing surfaces of said semiconductor substrates to a device for forming conductive thin films on exposed surfaces, a second transferring means for transferring semiconductor substrate bodies from said device for exposing surfaces of semiconductor substrate bodies to a device for forming thermal oxidation films on exposed surfaces, and a third transferring means for transferring substrate bodies from a device for exposing surfaces of metallic wirings formed on said substrate bodies to a device for forming a conductive thin film on surfaces of said metallic wirings, are provided, and at least 1 of said first, second, and third transferring means are maintained in an atmosphere of an inert gas or of air having a moisture concentration of 10 ppb or less.
Claim 3
Dependent Claim 42 words
An apparatus for forming a thin film in accordance with claim 1, wherein at least 1 of said transferring means is capable of transferring said substrate bodies in a floating manner by means of jetting of a gas onto said substrate bodies.
Claim 4
Dependent Claim 46 words
An apparatus for forming a thin film in accordance claim 1, wherein said process for exposing surfaces of semiconductor substrate bodies is a process for exposing surfaces of N + regions formed on semiconductor substrate body surfaces covered by means of insulation films or resist films.
Claim 5
Dependent Claim 34 words
An apparatus for forming a thin film in accordance with claim 3, wherein said N + region is a source/drain region of an MOS transistor, or is an emitting region of a bipolar transistor.

References Cited (Backward Citations)

JPS55163879A Cited
US4498416A Cited
JPS59501727A Cited
JPS62104134A Cited
JPS62198122A Cited
US5292393A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-12-12 1998-06-13 1998-12-13 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-12-12 2002-06-13 2002-12-13 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-12-12 2006-06-13 2006-12-13 $7700.00 Window Closed / Lapsed

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