Abstract An SOI semiconductor device, for example, a DRAM device, wherein a dummy pattern layer of substantially the same thickness as a charge storage layer constituting part of a capacitor is formed by the same material as the layer in a cell nonformation region wherein memory cells are not formed around a cell formation region where memory cells are formed in an array. As a result, the large step-difference between the cell formation region and the cell nonformation region disappears, the surface of the smoothing layer formed under the charge storage layer and dummy pattern layer become smooth, air bubbles do not become entrained between the smoothing layer and supporting substrate, and the bonding of the smoothing layer and the supporting substrate becomes better. The dummy pattern layer preferably is fixed to a predetermined potential in a range from the ground level to the power source voltage. Further, the dummy pattern layer preferably is electrically connected to a cell plate layer stacked on the charge storage layer through a capacitor insulating film layer.
A process for producing an SOI type semiconductor memory device comprising the steps of: forming an insulating layer with contact hole on one surface of a semiconductor layer; forming a circuit element formation layer having circuit elements in a projecting manner on said insulating layer; forming a thickness adjusting layer to a thickness approximately the same as the said circuit element formation layer on said insulating layer around a region where said circuit elements are formed; forming a second insulating layer on at least the circuit element; forming a conductive layer on the second insulating layer and said thickness adjustment layer; forming a smoothing layer on the conductive layer; and cladding a supporting layer to the smoothing layer.
Claim 2
Dependent Claim
118 words
A process for producing an SOI type semiconductor memory device comprising the steps of: forming an insulating layer with contact hole on one surface of a semiconductor layer; forming a circuit element formation layer having circuit elements in a projecting manner on said insulating layer; forming a thickness adjusting layer to a thickness approximately the same as the said circuit element formation layer on said insulating layer around a region where said circuit elements are formed; forming a second insulating layer on at least the circuit element; forming a conductive layer on the second insulating layer and said thickness adjustment layer; forming a smoothing layer on the conductive layer; and cladding a supporting layer to the smoothing layer.
Claim 3
Dependent Claim
51 words
A process according to claim 1, which subsequent to cladding, including grinding and polishing an exposed surface of the semiconductor layer to form another surface and then forming a gate insulating layer on the other surface of said semiconductor layer, and forming a gate electrode layer on said gate insulating layer.
Claim 4
Dependent Claim
44 words
A process according to claim 1 wherein the steps of forming the circuit element formation layer and the adjusting layer are performed simultaneously and the step of forming a second insulating coating applies the coating to both the circuit elements and the adjuster layer.
Claim 5
Dependent Claim
33 words
A process for producing an SOI type semiconductor memory device as set forth in claim 1, wherein said circuit element formation layer and said thickness adjusting layer are formed by the same step.
Claim 6
Dependent Claim
48 words
A process for producing an SOI type semiconductor memory device as set forth in claim 4, further including a step of forming a gate insulating layer on the other surface of said semiconductor layer, and a step of forming a gate electrode layer on said gate insulating layer.