US5370767A
Expired / Lapsed
US
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Selective dry etching method for compound semiconductor and production method of semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1993-09-24
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Granted: 1994-12-06
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Expires: 2013-09-24
Abstract
Abstract A selective ECR dry etching method for etching compound semiconductors includes dry etching an In-containing compound semiconductor material in an ECR plasma of a Cl 2 /He mixture with a Cl 2 /(He+Cl 2 ) ratio from 0.05 to 0.2 and a gas pressure below 4.0×10 -4 Torr. A selective ECR dry etching method includes dry etching a compound semiconductor material including no Al selectively with respect to a compound semiconductor material including Al using a plasma in an Cl 2 /He/O 2 mixture with a ratio of Cl 2 /(He+Cl 2 ) ratio within 0.05 to 0.2 and O 2 less than 30% of the Cl 2 gas at a gas pressure below 5.0×10 -4 Torr.
Inventors
- 👤 Shinichi Miyakuni
- 👤 Takesi Kuragaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:50
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/246
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
50 words
A selective dry etching method for etching compound semiconductors comprising: dry etching an In series compound semiconductor material in an electron cyclotron resonance plasma of a Cl 2 /He mixture having a Cl 2 /(He+Cl 2 ) ratio from 0.05 to 0.2 and a gas pressure below 4.0×10 -4 Torr.
Claim 2
Dependent Claim
50 words
A selective dry etching method for etching compound semiconductors comprising: dry etching an In series compound semiconductor material in an electron cyclotron resonance plasma of a Cl 2 /He mixture having a Cl 2 /(He+Cl 2 ) ratio from 0.05 to 0.2 and a gas pressure below 4.0×10 -4 Torr.
Claim 3
Dependent Claim
60 words
A selective dry etching method for etching compound semiconductors comprising: etching a compound semiconductor material in an electron cyclotron resonance plasma of a Cl 2 /He mixture having a Cl 2 /(He+Cl 2 ) ratio from 0.05 to 0.2 and O 2 in an amount less than 30% of the Cl 2 at a gas pressure below 5.0×10 -4 Torr.
Claim 4
Dependent Claim
60 words
A selective dry etching method for etching compound semiconductors comprising: etching a compound semiconductor material in an electron cyclotron resonance plasma of a Cl 2 /He mixture having a Cl 2 /(He+Cl 2 ) ratio from 0.05 to 0.2 and O 2 in an amount less than 30% of the Cl 2 at a gas pressure below 5.0×10 -4 Torr.
Claim 5
Dependent Claim
23 words
The selective dry etching method of claim 2 comprising selectively dry etching one of InGaAs disposed on AlGaAs and GaAs disposed on AlGaAs.
Claim 6
Dependent Claim
19 words
The selective dry etching method of claim 2 including supplying 10 to 40 W RF power to the plasma.
Claim 7
Dependent Claim
19 words
The selective dry etching method of claim 3 including supplying 10 to 40 W RF power to the plasma.
Claim 8
Independent Claim
80 words
A method of producing a field effect transistor having a structure comprising an AlGaAs layer having an Al composition ratio of at least 0.2 and an InGaAs layer having an In composition ratio of at least 0.5 successively disposed on an active layer comprising GaAs comprising: etching said InGaAs layer selectively relative to said AlGaAs layer in a reactive plasma of chlorine and oxygen; and etching said AlGaAs layer employing said InGaAs layer as a mask, thereby producing a recess.
Claim 9
Independent Claim
80 words
A method of producing a field effect transistor having a structure comprising an AlGaAs layer having an Al composition ratio of at least 0.2 and an InGaAs layer having an In composition ratio of at least 0.5 successively disposed on an active layer comprising GaAs comprising: etching said InGaAs layer selectively relative to said AlGaAs layer in a reactive plasma of chlorine and oxygen; and etching said AlGaAs layer employing said InGaAs layer as a mask, thereby producing a recess.
References Cited (Backward Citations)
US5024958A
Cited
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