US5367765A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating integrated circuit chip package
Assignee: NEC Electronics Corp
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Filing: 1992-12-23
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Granted: 1994-11-29
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Expires: 2012-12-23
Abstract
Abstract A method of fabricating an integrated circuit chip package is provided in which a multi-chip module is formed by mounting a plurality of IC chips on a single silicon circuit board by means of flip-chip interconnection. Compared with a conventional multi-chip module in which, in order to obtain a uniform gap between IC chips and a silicon circuit board, metal bumps provided on both the silicon circuit board and the IC chips are used, such gap is defined in the present method by thicknesses of organic insulating films formed on both the IC chips and the circuit board. That is, height of metal bumps is selected such that it is smaller than a sum of the thicknesses of the insulating films and that closed spaces due to melting of solder for metal bump connection is prevented from being formed between the organic insulating films.
Inventors
- 👤 Teruo Kusaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 12:52
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/611; H10W70/67; H10W70/69; H10W70/698; H10W90/00; H10W90/401; H10W72/00; H10W72/071; H10W72/072; H10W72/07231; H10W72/07236; H10W72/20; H10W72/251; H10W72/252; H10W72/851; H10W72/874; H10W72/877; H10W90/701; H10W90/721; H10W90/724; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49004; Y10T29/49117; Y10T29/49124; Y10T29/4913; Y10T29/49144
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
301 words
A method of fabricating an integrated circuit chip package forming a multi-chip module including a plurality of IC chips each having a plurality of metal bumps formed on one surface thereof and connected to a single, flat silicon circuit board having in at least a portion of its surface a predetermined wiring pattern through said metal bumps by means of flip-chip interconnection, said method comprising the steps of: forming a first flat film of an organic insulating material on said one surfaces of said IC chips up to a first thickness; forming a plurality of first through-holes in said first flat film at predetermined positions, and forming said metal bumps within said first through-holes; forming a second flat film of an organic insulating material on a surface of said silicon circuit board up to a second thickness; forming in said second flat film a plurality of second through-holes, said second through-holes being located at positions corresponding respectively to said metal bumps of said IC chips; filling said second through-holes with solder metal, respectively; coating at least one of said first flat film and said second flat film with adhesive of thermosetting organic insulating material; placing said IC chips on said silicon circuit board such that each of said metal bumps of said IC chips mates with a corresponding solder metal, said adhesive of thermosetting organic insulating material thereby adhering said first flat film on said IC chips and said second flat film on said silicon circuit board to each other and surrounding each of said metal bumps of said IC chips in contact therewith; and performing a heat treatment to connect each of said metal bumps and said solder metal by melting said solder metal and to bond said first and second flat films to each other by thermosetting said adhesive.
Claim 2
Independent Claim
301 words
A method of fabricating an integrated circuit chip package forming a multi-chip module including a plurality of IC chips each having a plurality of metal bumps formed on one surface thereof and connected to a single, flat silicon circuit board having in at least a portion of its surface a predetermined wiring pattern through said metal bumps by means of flip-chip interconnection, said method comprising the steps of: forming a first flat film of an organic insulating material on said one surfaces of said IC chips up to a first thickness; forming a plurality of first through-holes in said first flat film at predetermined positions, and forming said metal bumps within said first through-holes; forming a second flat film of an organic insulating material on a surface of said silicon circuit board up to a second thickness; forming in said second flat film a plurality of second through-holes, said second through-holes being located at positions corresponding respectively to said metal bumps of said IC chips; filling said second through-holes with solder metal, respectively; coating at least one of said first flat film and said second flat film with adhesive of thermosetting organic insulating material; placing said IC chips on said silicon circuit board such that each of said metal bumps of said IC chips mates with a corresponding solder metal, said adhesive of thermosetting organic insulating material thereby adhering said first flat film on said IC chips and said second flat film on said silicon circuit board to each other and surrounding each of said metal bumps of said IC chips in contact therewith; and performing a heat treatment to connect each of said metal bumps and said solder metal by melting said solder metal and to bond said first and second flat films to each other by thermosetting said adhesive.
Claim 3
Dependent Claim
33 words
The method claimed in claim 1, wherein said organic insulating material forming said first film and said second film is thermoset polyimide and said adhesive in said coating step is polyimide before thermosetting.
Claim 4
Dependent Claim
16 words
The method claimed in claim 2, wherein said first film is thinner than said second film.
Claim 5
Dependent Claim
50 words
The method claimed in claim 1 or 2, wherein said step of filling said second through-holes with said solder metal comprises a first step of filling said second through-holes with relatively high melting point metal and a second step of filling said second through-holes with relatively low melting point metal.
Claim 6
Dependent Claim
30 words
The method claimed in claim 1 or 2, wherein a sum of thicknesses of said first film and said second film is larger than a height of said metal bump.
Claim 7
Dependent Claim
50 words
The method claimed in claim 1 or 2, further comprising the step of disposing on surfaces of said IC chips opposite to said one surfaces thereof a heat sink member with a surface of said heat sink member being in intimate contact with said opposite surfaces of said IC chips.
Claim 8
Dependent Claim
23 words
The method claimed in claim 6, further comprising, before the step of disposing, the step of painting said opposite surfaces with thermal grease.
Claim 9
Dependent Claim
59 words
The method claimed in claim 4, wherein the step of performing a heat treatment comprises a pre-heating step of melting said los melting point metal and a main heating step of melting said high melting point metal so that, after the pre-heating step is completed, electrical connection between said silicon circuit board and said IC chips can be checked.
Claim 10
Independent Claim
331 words
A method of fabricating an integrated circuit chip package forming a multi-chip module, said multi-chip module including a plurality of IC chips mounted on a silicon circuit board, said method comprising the steps of: forming a first flat film of an organic insulating material on a surface of each of said IC chips up to a first thickness; forming a plurality of first through-holes in said first flat film to expose respective terminals of a corresponding one of said IC chips, each of said first through-holes having a first size; forming metal bumps on said respective terminals of the corresponding one of said IC chips exposed by said first through-holes; forming a second flat film of an organic insulating material on a surface of said silicon circuit board up to a second thickness; forming a plurality of second through-holes in said second flat film, each of said second through-holes being located at a position corresponding to an associated one of said metal bumps of said IC chips and having a second size that is smaller than said first size; forming solder metal into said second through-holes, respectively; coating adhesive of thermosetting organic insulating material on said second flat film and said solder metal such that said adhesive of thermosetting organic insulating material has a uniform, flat surface and fills respective ones of said second through-holes; placing said IC chips on said silicon circuit board such that each of said metal bumps of said IC chips mates with the corresponding solder metal by penetrating said adhesive, said adhesive thereby adhering said first flat film on said IC chips and said second flat film on said silicon circuit board to each other and surrounding each of said metal bumps of said IC chips in contact therewith; and performing a heat treatment to connect each of said metal bumps and said solder metal by melting said solder metal and to bond said first and second flat film to each other by thermosetting said adhesive.
Claim 11
Independent Claim
331 words
A method of fabricating an integrated circuit chip package forming a multi-chip module, said multi-chip module including a plurality of IC chips mounted on a silicon circuit board, said method comprising the steps of: forming a first flat film of an organic insulating material on a surface of each of said IC chips up to a first thickness; forming a plurality of first through-holes in said first flat film to expose respective terminals of a corresponding one of said IC chips, each of said first through-holes having a first size; forming metal bumps on said respective terminals of the corresponding one of said IC chips exposed by said first through-holes; forming a second flat film of an organic insulating material on a surface of said silicon circuit board up to a second thickness; forming a plurality of second through-holes in said second flat film, each of said second through-holes being located at a position corresponding to an associated one of said metal bumps of said IC chips and having a second size that is smaller than said first size; forming solder metal into said second through-holes, respectively; coating adhesive of thermosetting organic insulating material on said second flat film and said solder metal such that said adhesive of thermosetting organic insulating material has a uniform, flat surface and fills respective ones of said second through-holes; placing said IC chips on said silicon circuit board such that each of said metal bumps of said IC chips mates with the corresponding solder metal by penetrating said adhesive, said adhesive thereby adhering said first flat film on said IC chips and said second flat film on said silicon circuit board to each other and surrounding each of said metal bumps of said IC chips in contact therewith; and performing a heat treatment to connect each of said metal bumps and said solder metal by melting said solder metal and to bond said first and second flat film to each other by thermosetting said adhesive.
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| 3.5 Years (Year 4) | 1997-11-28 | 1998-05-30 | 1998-11-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-28 | 2002-05-30 | 2002-11-29 | $3760.00 | Window Closed / Lapsed |
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