US5367308A
Expired / Lapsed
US
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Thin film resonating device
Assignee: Iowa State University Research Foundation Inc
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Filing: 1992-05-29
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Granted: 1994-11-22
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Expires: 2012-05-29
Abstract
Abstract A thin film resonator (TFR) antenna is disclosed which is characterized by substantially lower effective dielectric constant for the layer of dielectric material deposited between the ground metal layer and the top metal layer (transducer) of the TFR antenna. The dielectric constant is substantially lowered by forming an array of dielectric posts in the dielectric layer. The posts support the top metal layer of the TFR antenna. The interstices between the posts are occupied by air in the preferred embodiment. The lower effective dielectric value results in reduced ohmic losses which in turn leads to enhanced gain in the TFR antenna system.
Inventors
- 👤 Robert J. Weber
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 23:22
CPC Classifications
H; H01; H01Q; H01Q1/00; H01Q1/36; H01Q1/38; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49016
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
182 words
A microelectronic antenna formed on a substrate of the type used for semiconductor devices, and adapted for operation at very high frequencies, the antenna comprising, in combination: a supporting substrate of the type used to support microelectronic circuits, a first thin film conductive layer deposited on the substrate and connected to serve as a ground plane for the antenna, an array of dielectric posts projecting from the ground plane on the order of five microns, a top thin film conductive layer supported by said posts, the top thin film conductive layer being fed as the radiating element of the antenna, and the array of dielectric posts and the first and top thin film conductive layers forming a bridge structure separating said first and top thin film conductive layers where the majority of a space between said first and top thin film conductive layers defined by the bridge structure is occupied by air, the minority of the area being occupied by the dielectric material of the posts, thereby to reduce the ohmic losses in the antenna structure and enhance the signal gain thereof.
Claim 2
Dependent Claim
182 words
A microelectronic antenna formed on a substrate of the type used for semiconductor devices, and adapted for operation at very high frequencies, the antenna comprising, in combination: a supporting substrate of the type used to support microelectronic circuits, a first thin film conductive layer deposited on the substrate and connected to serve as a ground plane for the antenna, an array of dielectric posts projecting from the ground plane on the order of five microns, a top thin film conductive layer supported by said posts, the top thin film conductive layer being fed as the radiating element of the antenna, and the array of dielectric posts and the first and top thin film conductive layers forming a bridge structure separating said first and top thin film conductive layers where the majority of a space between said first and top thin film conductive layers defined by the bridge structure is occupied by air, the minority of the area being occupied by the dielectric material of the posts, thereby to reduce the ohmic losses in the antenna structure and enhance the signal gain thereof.
Claim 3
Dependent Claim
40 words
The microelectronic antenna of claim 1 wherein said top thin film conductive layer is rectangularly shaped and grounded on a first end so that said top thin film conductive layer emits electromagnetic energy almost entirely from a second, opposing, end.
Claim 4
Dependent Claim
33 words
The microelectronic antenna of claim 2 wherein said microelectronic antenna is positioned on a wafer and coupled in cooperative configuration with a plurality of other antennas to form a phased array antenna system.
Claim 5
Dependent Claim
46 words
The microelectronic antenna of claim 1 wherein said top thin film conductive layer is dumbbell shaped and connected to an energizing source in a manner such that the top thin film conductive layer emits electromagnetic energy almost entirely from a first and a second opposing end.
Claim 6
Dependent Claim
20 words
The microelectronic antenna of claim 1 wherein said top thin film conductive layer is acoustically coupled to an excitation source.
Claim 7
Dependent Claim
32 words
The microelectronic antenna of claim 1 wherein said microelectronic antenna is positioned on a wafer and coupled in cooperative configuration with a set of antennas to form a phased array antenna system.
Claim 8
Dependent Claim
26 words
The microelectronic antenna of claim 1 wherein the posts cover no more than about 4% of the surface area of the top thin film conductive layer.
Claim 9
Independent Claim
199 words
A method of forming a microelectronic antenna comprising the steps of: depositing a thin film conductive layer on a substrate of the type used to support microelectronic circuits, and providing a connection point to the thin film layer to cause said thin film conductive layer to function as a ground plane for an antenna structure, forming a dielectric layer having a thickness on the order of 5 microns on the thin film conductive layer, patterning the dielectric layer to form an array of posts projecting from the thin film conductive layer, filling the area intermediate the posts with a sacrificial material to form a planar surface parallel with and disposed above the surface of the thin film conductive layer, depositing a second conductive layer on said planar surface, providing a coupling to the second conductive layer to cause said second conductive layer to serve as a radiating and receiving element for the antenna, removing the sacrificial material intermediate the posts after said step of depositing a second conductive layer thereby providing an air bridge structure in which the second conductive layer is supported above the ground plane by said posts while being separated therefrom primarily by an air dielectric.
Claim 10
Independent Claim
199 words
A method of forming a microelectronic antenna comprising the steps of: depositing a thin film conductive layer on a substrate of the type used to support microelectronic circuits, and providing a connection point to the thin film layer to cause said thin film conductive layer to function as a ground plane for an antenna structure, forming a dielectric layer having a thickness on the order of 5 microns on the thin film conductive layer, patterning the dielectric layer to form an array of posts projecting from the thin film conductive layer, filling the area intermediate the posts with a sacrificial material to form a planar surface parallel with and disposed above the surface of the thin film conductive layer, depositing a second conductive layer on said planar surface, providing a coupling to the second conductive layer to cause said second conductive layer to serve as a radiating and receiving element for the antenna, removing the sacrificial material intermediate the posts after said step of depositing a second conductive layer thereby providing an air bridge structure in which the second conductive layer is supported above the ground plane by said posts while being separated therefrom primarily by an air dielectric.
Claim 11
Dependent Claim
33 words
The method of claim 8 wherein said patterning step comprises removing dielectric material so that the remaining posts occupy no more than 4% of the surface area of the thin film conductive layer.
Claim 12
Dependent Claim
100 words
A thin film resonator (TFR) device for high frequency operation constructed upon a semiconductor substrate comprising: a semiconductor substrate, a ground plane layer deposited on the semiconductor substrate, a top conductive layer extending in two dimensions for radiating and receiving electromagnetic signals from a propagation medium, and bridge means projecting from said ground plane layer and supporting said top conductive layer, said bridge means having a height on the order of 5 microns to form a volume between said ground plane layer and said top conductive layer having a relatively low dielectric value, thereby reducing ohmic losses for the TFR.
Claim 13
Dependent Claim
100 words
A thin film resonator (TFR) device for high frequency operation constructed upon a semiconductor substrate comprising: a semiconductor substrate, a ground plane layer deposited on the semiconductor substrate, a top conductive layer extending in two dimensions for radiating and receiving electromagnetic signals from a propagation medium, and bridge means projecting from said ground plane layer and supporting said top conductive layer, said bridge means having a height on the order of 5 microns to form a volume between said ground plane layer and said top conductive layer having a relatively low dielectric value, thereby reducing ohmic losses for the TFR.
Claim 14
Dependent Claim
38 words
The TFR device of claim 10 wherein said bridge means comprises a plurality of spaced posts composed of a dielectric material arranged over a surface area of the ground plane layer, said posts supporting said top conductive layer.
Claim 15
Dependent Claim
18 words
The TFR device of claim 11 wherein said plurality of posts are arranged in a two dimensional array.
Claim 16
Dependent Claim
13 words
The TFR device of claim 11 wherein said posts are 5 microns tall.
Claim 17
Dependent Claim
23 words
The TFR device of claim 13 wherein each of said posts has a top surface area of approximately 10 microns by 10 microns.
Claim 18
Dependent Claim
32 words
The TFR device of claim 11 wherein the combined top surface area of said plurality of spaced posts covers less than 4 percent of the surface area of said top conductive layer.
Claim 19
Dependent Claim
31 words
The TFR structure of claim 11 wherein the ratio of the height of a one of said plurality of posts to the width of said one is approximately 1 to 2.
Claim 20
Dependent Claim
23 words
The TFR structure of claim 11 wherein each of said posts has a top surface area of approximately 5 microns by 5 microns.
Claim 21
Dependent Claim
31 words
The TFR structure of claim 17 wherein the combined top surface area of said plurality of spaced posts covers about 1 percent of the surface area of said top conductive layer.
Claim 22
Dependent Claim
31 words
The TFR structure of claim 11 wherein the ratio of the height of a one of said plurality of posts to the width of said one is approximately 1 to 1.
Claim 23
Dependent Claim
27 words
The TFR structure of claim 11 wherein the space between said posts in said volume between said ground plane layer and said top metal layer comprises air.
Claim 24
Dependent Claim
20 words
The microelectronic antenna of claim 10 wherein said top thin film conductive layer is acoustically coupled to an excitation source.
References Cited (Backward Citations)
US4366484A
Cited
US4633262A
Cited
US4623893A
Cited
JPS60182203A
Cited
US4642508A
Cited
US5182564A
Cited
US4851855A
Cited
JPH0199302A
Cited
US5055019A
Cited
US5034753A
Cited
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