US5365192A
Expired / Lapsed
US
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AC-coupled single-ended or differential-input radio frequency amplifier integrated circuit
Assignee: Trimble Inc
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Filing: 1993-08-11
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Granted: 1994-11-15
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Expires: 2013-08-11
Abstract
Abstract An embodiment of the present invention combines, on a single integrated circuit, a first bipolar transistor in a common-emitter configuration capacitively coupled to a second bipolar transistor in a common-base configuration, together with a capacitive input coupling for a single-ended input and directly-coupled collector outputs for a differential-output for driving successive differential-input and differential-output emitter-coupled transistor pairs for multiple stages of amplifier gain.
Inventors
- 👤 Gary L. Wagner
- 👤 Chung Y. Lau
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:17
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/45; H03F3/45071; H03F3/45076; H03F3/45179; H03F3/45197; H03F3/189; H03F3/19; H03F3/4508; H03F3/45098; H03F3/45103; H03F2203/00; H03F2203/45; H03F2203/45458; H03F2203/45464
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
206 words
A single-ended input and differential-output radio frequency (RF) amplifier for fabrication within a single semiconductor integrated circuit (IC), the amplifier comprising: a radio frequency (RF) input terminal for accepting signals in excess of one gigahertz in frequency; a first bipolar transistor amplifier having a first collector, a first emitter and a first base; a first transistor current source for providing a bias to the first bipolar transistor; a first emitter decoupling capacitor connected between said first emitter and a signal common; a first capacitor network comprised of a first input capacitor connected between the RF input terminal and said first base and a first base capacitor connected between said first base and said signal common; a second bipolar transistor having a second collector, a second emitter and a second base; a second transistor current source for providing a bias to the second bipolar transistor; a second emitter decoupling capacitor connected between said second emitter and said signal common; a second capacitor network comprised of a second input capacitor connected between said signal common and said second base and a second base capacitor connected between said second base and said signal common; and a second emitter coupling capacitor connected between said signal common and said second emitter.
Claim 2
Dependent Claim
206 words
A single-ended input and differential-output radio frequency (RF) amplifier for fabrication within a single semiconductor integrated circuit (IC), the amplifier comprising: a radio frequency (RF) input terminal for accepting signals in excess of one gigahertz in frequency; a first bipolar transistor amplifier having a first collector, a first emitter and a first base; a first transistor current source for providing a bias to the first bipolar transistor; a first emitter decoupling capacitor connected between said first emitter and a signal common; a first capacitor network comprised of a first input capacitor connected between the RF input terminal and said first base and a first base capacitor connected between said first base and said signal common; a second bipolar transistor having a second collector, a second emitter and a second base; a second transistor current source for providing a bias to the second bipolar transistor; a second emitter decoupling capacitor connected between said second emitter and said signal common; a second capacitor network comprised of a second input capacitor connected between said signal common and said second base and a second base capacitor connected between said second base and said signal common; and a second emitter coupling capacitor connected between said signal common and said second emitter.
Claim 3
Dependent Claim
71 words
The amplifier of claim 1, wherein: the first capacitor network comprises a stack of first through fourth capacitive plates separated by a dielectric in which said first input capacitor is formed by said second and fourth plates connected together in opposition to said third plate and said first base capacitor is formed by said first and second plates, said first plate being the most proximate to a substrate of said IC.
Claim 4
Dependent Claim
71 words
The amplifier of claim 1, wherein: the second capacitor network comprises a stack of first through fourth capacitive plates separated by a dielectric in which said second input capacitor is formed by said second and fourth plates connected together in opposition to said third plate and said second base capacitor is formed by said first and second plates, said first plate being the most proximate to a substrate of said IC.
Claim 5
Dependent Claim
137 words
The amplifier of claim 1, wherein: the first capacitor network comprises a stack of first through fourth capacitive plates separated by a dielectric in which said first input capacitor is formed by said second and fourth plates connected together in opposition to said third plate and said first base capacitor is formed by said first and second plates, said first plate being the most proximate to a substrate of said IC; and the second capacitor network comprises a stack of fifth through eighth capacitive plates separated by a dielectric in which said second input capacitor is formed by said sixth and eighth plates connected together in opposition to said seventh plate and said second base capacitor is formed by said fifth and sixth plates, said fifth plate being the most proximate to said substrate of said IC.
Claim 6
Dependent Claim
26 words
The amplifier of claim 1, wherein: the first and second transistor current sources provide substantially the same bias currents to the first and second bipolar transistors.
Claim 7
Dependent Claim
225 words
A differential-input and differential-output amplifier for fabrication within a single semiconductor integrated circuit (IC), the amplifier comprising: a first radio frequency (RF) input terminal for accepting signals in excess of one gigahertz in frequency; a second radio frequency (RF) input terminal for accepting signals in excess of one gigahertz in frequency; a first bipolar transistor amplifier having a first collector, a first emitter and a first base; a first transistor current source for providing a bias to the first bipolar transistor; a first emitter decoupling capacitor connected between said first emitter and a signal common; a first capacitor network comprised of a first input capacitor connected between the first RF input terminal and said first base and a first base capacitor connected between said first base and said signal common; a second bipolar transistor having a second collector, a second emitter and a second base; a second transistor current source for providing a bias to the second bipolar transistor; a second emitter decoupling capacitor connected between said first emitter and the second RF input terminal; a second capacitor network comprised of a second input capacitor connected between the second RF input terminal and said second base and a second base capacitor connected between said second base and said signal common; and a second emitter coupling capacitor connected between said signal common and said second emitter.
Claim 8
Dependent Claim
225 words
A differential-input and differential-output amplifier for fabrication within a single semiconductor integrated circuit (IC), the amplifier comprising: a first radio frequency (RF) input terminal for accepting signals in excess of one gigahertz in frequency; a second radio frequency (RF) input terminal for accepting signals in excess of one gigahertz in frequency; a first bipolar transistor amplifier having a first collector, a first emitter and a first base; a first transistor current source for providing a bias to the first bipolar transistor; a first emitter decoupling capacitor connected between said first emitter and a signal common; a first capacitor network comprised of a first input capacitor connected between the first RF input terminal and said first base and a first base capacitor connected between said first base and said signal common; a second bipolar transistor having a second collector, a second emitter and a second base; a second transistor current source for providing a bias to the second bipolar transistor; a second emitter decoupling capacitor connected between said first emitter and the second RF input terminal; a second capacitor network comprised of a second input capacitor connected between the second RF input terminal and said second base and a second base capacitor connected between said second base and said signal common; and a second emitter coupling capacitor connected between said signal common and said second emitter.
Claim 9
Dependent Claim
71 words
The amplifier of claim 6, wherein: the first capacitor network comprises a stack of first through fourth capacitive plates separated by a dielectric in which said first input capacitor is formed by said second and fourth plates connected together in opposition to said third plate and said first base capacitor is formed by said first and second plates, said first plate being the most proximate to a substrate of said IC.
Claim 10
Dependent Claim
71 words
The amplifier of claim 6, wherein: the second capacitor network comprises a stack of first through fourth capacitive plates separated by a dielectric in which said second input capacitor is formed by said second and fourth plates connected together in opposition to said third plate and said second base capacitor is formed by said first and second plates, said first plate being the most proximate to a substrate of said IC.
Claim 11
Dependent Claim
137 words
The amplifier of claim 6, wherein: the first capacitor network comprises a stack of first through fourth capacitive plates separated by a dielectric in which said first input capacitor is formed by said second and fourth plates connected together in opposition to said third plate and said first base capacitor is formed by said first and second plates, said first plate being the most proximate to a substrate of said IC; and the second capacitor network comprises a stack of fifth through eighth capacitive plates separated by a dielectric in which said second input capacitor is formed by said sixth and eighth plates connected together in opposition to said seventh plate and said second base capacitor is formed by said fifth and sixth plates, said fifth plate being the most proximate to said substrate of said IC.
Claim 12
Dependent Claim
26 words
The amplifier of claim 6, wherein: the first and second transistor current sources provide substantially the same bias currents to the first and second bipolar transistors.
Claim 13
Dependent Claim
194 words
A single-ended input and differential-output radio frequency (RF) amplifier for fabrication within a single semiconductor integrated circuit (IC), the amplifier comprising: a radio frequency (RF) input terminal for accepting signals in excess of one gigahertz in frequency; a first bipolar transistor amplifier having a first collector, a first emitter and a first base; a first transistor current source connected to provide a bias to the first bipolar transistor; a first emitter decoupling capacitor connected between said first emitter and a signal common; a first capacitor network comprised of a first input capacitor connected between the RF input terminal and said first base; a second bipolar transistor having a second collector, a second emitter and a second base; a second transistor current source connected to provide a bias to the second bipolar transistor; a second emitter decoupling capacitor connected between said second emitter and said signal common; a second capacitor network comprised of a second input capacitor connected between said signal common and said second base and a second base capacitor connected between said second base and said signal common; and a second emitter coupling capacitor connected between said signal common and said second emitter.
Claim 14
Dependent Claim
194 words
A single-ended input and differential-output radio frequency (RF) amplifier for fabrication within a single semiconductor integrated circuit (IC), the amplifier comprising: a radio frequency (RF) input terminal for accepting signals in excess of one gigahertz in frequency; a first bipolar transistor amplifier having a first collector, a first emitter and a first base; a first transistor current source connected to provide a bias to the first bipolar transistor; a first emitter decoupling capacitor connected between said first emitter and a signal common; a first capacitor network comprised of a first input capacitor connected between the RF input terminal and said first base; a second bipolar transistor having a second collector, a second emitter and a second base; a second transistor current source connected to provide a bias to the second bipolar transistor; a second emitter decoupling capacitor connected between said second emitter and said signal common; a second capacitor network comprised of a second input capacitor connected between said signal common and said second base and a second base capacitor connected between said second base and said signal common; and a second emitter coupling capacitor connected between said signal common and said second emitter.
References Cited (Backward Citations)
US5250911A
Cited
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