US5364811A
Expired / Lapsed
US
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Method of manufacturing a semiconductor memory device with multiple device forming regions
Assignee: Renesas Electronics Corp
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Filing: 1993-02-16
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Granted: 1994-11-15
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Expires: 2013-02-16
Abstract
Abstract A dynamic random access memory (DRAM) is disclosed that can effectively prevent the formation of steps in the boundary region of a memory cell array 101 and a peripheral circuit 102, even in high integrated devices. This DRAM includes a double peripheral wall 20 of peripheral walls 20a and 20b at the boundary region of the memory cell array 101 and the peripheral circuit 102 of a P type silicon substrate 1, extending vertically upwards from the P type silicon substrate 1. The upper surfaces of the devices formed on the memory cell array and the peripheral circuit 102 in forming devices on the memory cell array 101 and the peripheral circuit 102 are substantially planarized, by virture of the double peripheral wall 20, to effectively prevent steps from being generated in the boundary region of the memory cell array 101 and the peripheral circuit 102, even in high integrated devices.
Inventors
- 👤 Natsuo Ajika
- 👤 Hideaki Arima
- 👤 Kaoru Motonami
- 👤 Atsushi Hachisuka
- 👤 Tomonori Okudaira
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:47
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/31; H10B12/318; H10B12/01; H10B12/02; H10B12/03
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
326 words
A method (i) of forming a semiconductor memory device comprising a first conductive layer formed on a first device forming region of a semiconductor substrate with an insulating film therebetween, and a second conductive layer formed on a second device forming region adjacent to said first device forming region with an insulating film therebetween, wherein the upper surface thereof is substantially equal distance from the substrate surface as the upper surface of the upper portion of said first conductive layer, and (ii) for removing the upper portion of said first conductive layer in a state where said second conductive layer remains, after forming an etch back film on said first and second conductive layers, said method comprising the steps of: forming said first conductive layer on said first device forming region with an insulating film therebetween; forming said second conductive layer on said second device forming region, wherein the upper surface of the second conductive layer is substantially equal distance from the substrate surface as the upper surface of the upper portion of said first conductive layer; forming an opposing pair of peripheral walls with a distance therebetween along the boundary region of said first and second device forming regions, wherein each said wall extends vertically upwards from the substrate surface and has an upper surface substantially equal distance from the substrate surface as the upper surface of the upper portion of said first conductive layer; forming an etch back film all over said first and second device forming regions, having thick portions and thin portions of film thickness, and a stepped portion in the region between said pair of peripheral walls, so that the upper surface of the film formed on said second device forming region is further from the substrate surface than the upper surface of the film formed on said first device forming region; and removing the upper portion of said first conductive layer in a state where said second conductive layer remains.
Claim 2
Independent Claim
326 words
A method (i) of forming a semiconductor memory device comprising a first conductive layer formed on a first device forming region of a semiconductor substrate with an insulating film therebetween, and a second conductive layer formed on a second device forming region adjacent to said first device forming region with an insulating film therebetween, wherein the upper surface thereof is substantially equal distance from the substrate surface as the upper surface of the upper portion of said first conductive layer, and (ii) for removing the upper portion of said first conductive layer in a state where said second conductive layer remains, after forming an etch back film on said first and second conductive layers, said method comprising the steps of: forming said first conductive layer on said first device forming region with an insulating film therebetween; forming said second conductive layer on said second device forming region, wherein the upper surface of the second conductive layer is substantially equal distance from the substrate surface as the upper surface of the upper portion of said first conductive layer; forming an opposing pair of peripheral walls with a distance therebetween along the boundary region of said first and second device forming regions, wherein each said wall extends vertically upwards from the substrate surface and has an upper surface substantially equal distance from the substrate surface as the upper surface of the upper portion of said first conductive layer; forming an etch back film all over said first and second device forming regions, having thick portions and thin portions of film thickness, and a stepped portion in the region between said pair of peripheral walls, so that the upper surface of the film formed on said second device forming region is further from the substrate surface than the upper surface of the film formed on said first device forming region; and removing the upper portion of said first conductive layer in a state where said second conductive layer remains.
Claim 3
Dependent Claim
126 words
A method of manufacturing a semiconductor memory device according to claim 1, wherein said step of forming said etch back film comprises the steps of: forming an etch back film all over said first and second device forming regions; etching back said etch back film to expose the upper surface of the upper portion of said first conductive layer; forming a resist on said second device forming region and on the region between said pair of peripheral walls to have a stepped portion on the region between said pair of peripheral walls; and said step of removing the upper portion of said first conductive layer comprises the step of removing the upper portion of said first conductive layer by etching, using said resist as a mask.
Claim 4
Independent Claim
264 words
A method of manufacturing a semiconductor memory device formed on a semiconductor substrate having a capacitor forming region and a peripheral MOS circuit region, said capacitor forming region and said peripheral MOS circuit region isolated by a device isolation region , said method comprising the steps of: forming a first conductive layer constituting said capacitor on said capacitor forming region with an insulating film therebetween; forming a second conductive layer on said peripheral MOS circuit region, wherein the upper surface thereof is substantially equal distance from the substrate surface as the upper surface of the upper portion of said first conductive layer; forming an opposing pair of peripheral walls with a distance therebetween along the boundary region of said capacitor forming region and said peripheral MOS circuit region, wherein each of said walls (i) has an upper surface substantially equal distance from the substrate surface as the upper surface of the upper portion of said first conductive layer, and (ii) extends vertically upwards from the substrate surface; forming an etch back film all over said capacitor forming region and said peripheral MOS circuit region; etching back said etch back film to expose the upper surface of the upper portion of said first conductive layer and the upper surface of said second conductive layer; forming a resist on said peripheral MOS circuit region and on the region between said pair of peripheral walls to have a stepped portion in the region between said pair of peripheral walls; and removing the upper portion of said first conductive layer by etching, using said resist as a mask.
Claim 5
Independent Claim
264 words
A method of manufacturing a semiconductor memory device formed on a semiconductor substrate having a capacitor forming region and a peripheral MOS circuit region, said capacitor forming region and said peripheral MOS circuit region isolated by a device isolation region , said method comprising the steps of: forming a first conductive layer constituting said capacitor on said capacitor forming region with an insulating film therebetween; forming a second conductive layer on said peripheral MOS circuit region, wherein the upper surface thereof is substantially equal distance from the substrate surface as the upper surface of the upper portion of said first conductive layer; forming an opposing pair of peripheral walls with a distance therebetween along the boundary region of said capacitor forming region and said peripheral MOS circuit region, wherein each of said walls (i) has an upper surface substantially equal distance from the substrate surface as the upper surface of the upper portion of said first conductive layer, and (ii) extends vertically upwards from the substrate surface; forming an etch back film all over said capacitor forming region and said peripheral MOS circuit region; etching back said etch back film to expose the upper surface of the upper portion of said first conductive layer and the upper surface of said second conductive layer; forming a resist on said peripheral MOS circuit region and on the region between said pair of peripheral walls to have a stepped portion in the region between said pair of peripheral walls; and removing the upper portion of said first conductive layer by etching, using said resist as a mask.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-14 | 1998-05-16 | 1998-11-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-14 | 2002-05-16 | 2002-11-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-14 | 2006-05-16 | 2006-11-15 | $7700.00 | Window Closed / Lapsed |