US5362960A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photoelectric transducing device having a self-exciting oscillating mechanism
Assignee: Terumo Corp
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Filing: 1993-01-29
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Granted: 1994-11-08
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Expires: 2013-01-29
Abstract
Abstract A photoelectric transducer advantageously usable as an electrical energy source for driving units of work modules and sensors of a micromachine is provided. This photoelectric transducer is characterized by having a photoelectric transducing element, a self-exciting oscillating circuit, and voltage transformer and optionally further a storage mechanism formed on one substrate. It is further characterized by producing electrical power by the exposure of the photoelectric transducing element to a continuous light.
Inventors
- 👤 Kiyoshi Komatsu
- 👤 Takehisa Mori
- 👤 Takeshi Kudo
- 👤 Hitomi Kadono
- 👤 Mitsuteru Kimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 18:25
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/103; H02; H02M; H02M3/00; H02M3/22; H02M3/24; H02M3/28; H02M3/325; H02M3/335; H02M3/338; H02M3/3381; H02M7/00; H02M7/02; H02M7/04; H02M7/05
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
75 words
A photoelectric transducing device comprising: a photoelectric transducing element for converting an irradiated continuous light to a direct electric current; a self-exciting oscillating mechanism for receiving said direct electric current; and a thin film voltage transformer including a coil and a condenser for generating a resonance frequency matched to a switching action of a field-effect transistor, said photoelectric transducing element, said self-exciting oscillating mechanism and said thin film voltage transformer being formed on one substrate.
Claim 2
Dependent Claim
75 words
A photoelectric transducing device comprising: a photoelectric transducing element for converting an irradiated continuous light to a direct electric current; a self-exciting oscillating mechanism for receiving said direct electric current; and a thin film voltage transformer including a coil and a condenser for generating a resonance frequency matched to a switching action of a field-effect transistor, said photoelectric transducing element, said self-exciting oscillating mechanism and said thin film voltage transformer being formed on one substrate.
Claim 3
Dependent Claim
28 words
A photoelectric transducing device according to claim 1, wherein said photoelectric transducing element, said self-exciting oscillating circuit, and said voltage transformer are integrally formed on an epitaxial layer.
Claim 4
Dependent Claim
53 words
A photoelectric transducing device according to claim 2, wherein a light receiving part of said photoelectric transducing element is obtained by forming a p type layer on said epitaxial layer thereby giving rise to a pn junction for a photoelectric cell and forming an anti-reflection preventing film on the surface of said junction.
Claim 5
Dependent Claim
63 words
A photoelectric transducing device according to claim 2, wherein the FET of said self-exciting oscillating circuit is obtained by patterning in a P-well region inserted in said epitaxial layer an n+ layer destined to form a source and a drain of a MOS transistor, injecting phosphorus by ion implantation or thermally diffusing arsenic, and forming a gate oxide film and a polysilicon gate.
Claim 6
Dependent Claim
38 words
A photoelectric transducing device according to claim 2, wherein said transducer is obtained by superposing a coil layer on a silicon oxide film overlying said epitaxial layer and covering said coil layer with a magnetic thin film core.
Claim 7
Dependent Claim
40 words
A photoelectric transducing device according to claim 1, further comprising: a storage mechanism, provided on a secondary output side of said thin film voltage transformer, and formed on said one substrate, for increasing power output of the photoelectric transducing device.
Claim 8
Dependent Claim
95 words
A photoelectric transducing device comprising: a photoelectric transducing element for converting an irradiated continuous light to a direct electric current; a self-exciting oscillating mechanism for receiving said direct electric current; a thin film voltage transformer having a coil and a condenser for generating a resonance frequency matched to a switching action of a field-effect transistor; and a storage mechanism for increasing power output of the photoelectric transducing device used to drive a load, said photoelectric transducing element, said self-exciting oscillating mechanism, said thin film voltage transformer and said storage mechanism being formed on one substrate.
Claim 9
Dependent Claim
95 words
A photoelectric transducing device comprising: a photoelectric transducing element for converting an irradiated continuous light to a direct electric current; a self-exciting oscillating mechanism for receiving said direct electric current; a thin film voltage transformer having a coil and a condenser for generating a resonance frequency matched to a switching action of a field-effect transistor; and a storage mechanism for increasing power output of the photoelectric transducing device used to drive a load, said photoelectric transducing element, said self-exciting oscillating mechanism, said thin film voltage transformer and said storage mechanism being formed on one substrate.
Claim 10
Dependent Claim
31 words
A photoelectric transducing device according to claim 7, wherein said photoelectric transducing element, said self-exciting oscillating circuit, said voltage transformer, and said storage mechanism are integrally formed on an epitaxial layer.
Claim 11
Dependent Claim
53 words
A photoelectric transducing device according to claim 8, wherein a light receiving part of said photoelectric transducing element is obtained by forming a p type layer on said epitaxial layer thereby giving rise to a pn junction for a photoelectric cell and forming an anti-reflection preventing film on the surface of said junction.
Claim 12
Dependent Claim
63 words
A photoelectric transducing device according to claim 8, wherein the FET of said self-exciting oscillating circuit is obtained by patterning in a P-well region inserted in said epitaxial layer an n+ layer destined to form a source and a drain of a MOS transistor, injecting phosphorus by ion implantation or thermally diffusing arsenic, and forming a gate oxide film and a polysilicon gate.
Claim 13
Dependent Claim
38 words
A photoelectric transducing device according to claim 8, wherein said transducer is obtained by superposing a coil layer on a silicon oxide film overlying said epitaxial layer and covering said coil layer with a magnetic thin film core.
Claim 14
Dependent Claim
47 words
A photoelectric transducing device according to claim 8, wherein said storage mechanism is obtained by forming a dielectric layer on the surface of a p+ silicon layer superposed on said epitaxial n type layer and utilizing a conductive layer formed on said dielectric as one of electrodes.
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