US5357133A
Expired / Lapsed
US
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Semiconductor memory device having improved write characteristic
Assignee: Toshiba Corp
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Filing: 1992-11-30
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Granted: 1994-10-18
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Expires: 2012-11-30
Abstract
Abstract The present invention comprises a groove formed in a semiconductor substrate, a buried element isolation region formed in the groove, source and drain diffusion regions formed inside the buried element isolation region, an electrode wiring layer connected the buried element isolation region across the diffusion regions and constituted by a two-layered structure consisting of a control gate and a floating gate, and a side-wall diffusion region which extends along the groove, is in contact with the source and drain diffusion regions, and is formed at a position corresponding to at least the electrode wiring layer. As a result, the write characteristic of a non-volatile memory can be improved, and at the same time, the non-volatile memory can be micropatterned.
Inventors
- 👤 Shigeru Morita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 18:11
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/684; H10D30/685; H10D30/01; H10D30/021; H10D30/0411; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0144; H10P; H10P30/00; H10P30/20
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
191 words
A semiconductor device comprising: a semiconductor substrate of a first conductivity type; a groove formed in said semiconductor substrate; a buried element isolation region formed in said groove; source and drain diffusion regions of a second conductivity type formed inside said buried element isolation region; an electrode wiring layer disposed above a portion of said buried element isolation region and said diffusion regions, wherein said electrode wiring layer comprises a two-layered structure consisting of a control gate and a floating gate; and a side-wall diffusion region of the first conductivity type extending along a portion of said groove, wherein said side-wall diffusion region contacts said source and drain diffusion regions and wherein said side-wall diffusion region is formed at a position corresponding to at least said electrode wiring layer, wherein a surface of said buried element isolation region is formed as a recessed portion to have a level lower than that of a surface of said semiconductor substrate, an end of said floating gate being formed in said recessed portion of said buried element isolation region, whereby electric field concentration easily occurs between said side-wall diffusion region and said floating gate.
Claim 2
Dependent Claim
191 words
A semiconductor device comprising: a semiconductor substrate of a first conductivity type; a groove formed in said semiconductor substrate; a buried element isolation region formed in said groove; source and drain diffusion regions of a second conductivity type formed inside said buried element isolation region; an electrode wiring layer disposed above a portion of said buried element isolation region and said diffusion regions, wherein said electrode wiring layer comprises a two-layered structure consisting of a control gate and a floating gate; and a side-wall diffusion region of the first conductivity type extending along a portion of said groove, wherein said side-wall diffusion region contacts said source and drain diffusion regions and wherein said side-wall diffusion region is formed at a position corresponding to at least said electrode wiring layer, wherein a surface of said buried element isolation region is formed as a recessed portion to have a level lower than that of a surface of said semiconductor substrate, an end of said floating gate being formed in said recessed portion of said buried element isolation region, whereby electric field concentration easily occurs between said side-wall diffusion region and said floating gate.
Claim 3
Dependent Claim
58 words
A device according to claim 1, wherein said side-wall diffusion region is formed such that an impurity of the first conductivity type is doped in a side wall of said groove by oblique ion implantation to set an impurity concentration in the side wall to be higher than that of each of other portions of said semiconductor substrate.
Claim 4
Dependent Claim
29 words
A device according to claim 1, further comprising an inversion preventing region of the first conductivity type which is formed in the bottom of said buried element isolation region.
Claim 5
Dependent Claim
27 words
A device according to claim 3, wherein an impurity concentration of said side-wall diffusion layer is set to be higher than that of said element isolation region.
Claim 6
Dependent Claim
179 words
A semiconductor device comprising: a semiconductor substrate of a first conductivity type; a groove formed in said semiconductor substrate; a buried element isolation region formed in said groove; source and drain diffusion regions of a second conductivity type formed inside said buried element isolation region; an electrode wiring layer disposed above a portion of said buried element isolation region and said diffusion regions, wherein said electrode wiring layer comprises a two-layered structure consisting of a control gate and a floating gate; and a side-wall diffusion region of the first conductivity type extending along a portion of said groove, wherein said side-wall diffusion region contacts said source and drain diffusion regions and wherein said side-wall diffusion region is formed at a position corresponding to at least said electrode wiring layer, wherein said side-wall diffusion region is formed such that an impurity of the first conductivity type is doped in a side wall of said groove by oblique ion implantation to produce a higher local impurity concentration in the side wall than is present in other portions of the semiconductor substrate.
Claim 7
Dependent Claim
179 words
A semiconductor device comprising: a semiconductor substrate of a first conductivity type; a groove formed in said semiconductor substrate; a buried element isolation region formed in said groove; source and drain diffusion regions of a second conductivity type formed inside said buried element isolation region; an electrode wiring layer disposed above a portion of said buried element isolation region and said diffusion regions, wherein said electrode wiring layer comprises a two-layered structure consisting of a control gate and a floating gate; and a side-wall diffusion region of the first conductivity type extending along a portion of said groove, wherein said side-wall diffusion region contacts said source and drain diffusion regions and wherein said side-wall diffusion region is formed at a position corresponding to at least said electrode wiring layer, wherein said side-wall diffusion region is formed such that an impurity of the first conductivity type is doped in a side wall of said groove by oblique ion implantation to produce a higher local impurity concentration in the side wall than is present in other portions of the semiconductor substrate.
Claim 8
Dependent Claim
29 words
A device according to claim 5, further comprising an inversion preventing region of the first conductivity type which is formed in the bottom of said buried element isolation region.
Claim 9
Dependent Claim
169 words
A semiconductor device comprising: a semiconductor substrate of a first conductivity type; a groove formed in said semiconductor substrate; a buried element isolation region formed in said groove; source and drain diffusion regions of a second conductivity type formed inside said buried element isolation region; an electrode wiring layer disposed above a portion of said buried element isolation region and said diffusion regions, wherein said electrode wiring layer comprises a two-layered structure consisting of a control gate and a floating gate; and a side-wall diffusion region of the first conductivity type extending along a portion of said groove, wherein said side-wall diffusion region contacts said source and drain diffusion regions and wherein said side-wall diffusion region is formed at a position corresponding to at least said electrode wiring layer; and an inversion preventing region of the first conductivity type formed in the bottom of said element isolation region, wherein an impurity concentration of said side-wall diffusion layer is set to be higher than that of said inversion preventing region.
Claim 10
Dependent Claim
169 words
A semiconductor device comprising: a semiconductor substrate of a first conductivity type; a groove formed in said semiconductor substrate; a buried element isolation region formed in said groove; source and drain diffusion regions of a second conductivity type formed inside said buried element isolation region; an electrode wiring layer disposed above a portion of said buried element isolation region and said diffusion regions, wherein said electrode wiring layer comprises a two-layered structure consisting of a control gate and a floating gate; and a side-wall diffusion region of the first conductivity type extending along a portion of said groove, wherein said side-wall diffusion region contacts said source and drain diffusion regions and wherein said side-wall diffusion region is formed at a position corresponding to at least said electrode wiring layer; and an inversion preventing region of the first conductivity type formed in the bottom of said element isolation region, wherein an impurity concentration of said side-wall diffusion layer is set to be higher than that of said inversion preventing region.
References Cited (Backward Citations)
US4114255A
Cited
US5231299A
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-10-17 | 1998-04-18 | 1998-10-18 | $2000.00 | Window Closed / Lapsed |
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