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US5355386A Expired / Lapsed US ⏱️ 0.0 years remaining

Monolithically integrated semiconductor structure and method of fabricating such structure

Assignee: Verizon Laboratories Inc
•
Filing: 1992-11-17
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Granted: 1994-10-11
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Expires: 2012-11-17
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Abstract

Abstract A heterostructure device includes a ridge-waveguide laser monolithically integrated with a ridge-waveguide rear facet monitor (RFM). An integral V-groove etched directly into the device substrate enables passive alignment of an optical fiber to the active region of the laser. The laser and RFM facets were formed using an in-situ multistep reactive ion etch process.

Inventors

  • 👤 Mark A. Rothman
  • 👤 Chan-Long Shieh
  • 👤 Craig A. Armiento
  • 👤 John A. Thompson
  • 👤 Alfred J. Negri

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 16:53
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/24; G02B6/42; G02B6/4201; G02B6/4249; H; H01; H01S; H01S5/00; H01S5/02; H01S5/026; H01S5/0262; H01S5/0264; G02B6/26; G02B6/30; H01S5/0201; H01S5/0203; H01S5/40; H01S5/4025

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 32 words
A monolithically integrated semiconductor structure, comprising: a fiber-receiving channel; an optical detection region; and a lasing region interposed between and in optical communication with said fiber-receiving channel and said optical detection region.
Claim 2
Dependent Claim 32 words
A monolithically integrated semiconductor structure, comprising: a fiber-receiving channel; an optical detection region; and a lasing region interposed between and in optical communication with said fiber-receiving channel and said optical detection region.
Claim 3
Dependent Claim 35 words
The monolithically integrated semiconductor structure as recited in claim 1 further comprising: a V-groove within said fiber-receiving channel; an optical fiber positionable within said V-groove; and a rear facet monitor structure within said detection region.
Claim 4
Dependent Claim 23 words
The semiconductor structure as recited in claim 1 wherein: said optical detection region and said lasing region each include a ridge waveguide structure.
Claim 5
Dependent Claim 38 words
The semiconductor structure as recited in claim 1 further comprising: an InP substrate; a first InP cladding layer; an InGaAsP active layer; an InGaAsP etch stop layer; a second InP cladding layer; and an InGaAs ohmic contact layer.
Claim 6
Dependent Claim 48 words
A monolithically integrated wafer assembly, comprising: a plurality of fiber-receiving channels; a plurality of optical detection regions each associated with a respective fiber-receiving channel; and a plurality of lasing regions each interposed between and in optical communication with a respective fiber-receiving channel and its associated optical detection region.
Claim 7
Dependent Claim 48 words
A monolithically integrated wafer assembly, comprising: a plurality of fiber-receiving channels; a plurality of optical detection regions each associated with a respective fiber-receiving channel; and a plurality of lasing regions each interposed between and in optical communication with a respective fiber-receiving channel and its associated optical detection region.
Claim 8
Dependent Claim 32 words
The monolithically integrated wafer assembly as recited in claim 5 further comprising: a V-groove within each of said fiber-receiving channels; and a rear facet monitor structure within each of said detection regions.
Claim 9
Dependent Claim 25 words
The monolithically integrated wafer assembly as recited in claim 5 wherein each of said optical detection regions and lasing regions comprises: a ridge waveguide structure.
Claim 10
Dependent Claim 62 words
A monolithically integrated optical assembly, comprising: a plurality of light detection means; a plurality of channels each associated with a respective light detection means and including a V-groove; and a plurality of light generating means each interposed between and optically accessible to a respective light detection means and a respective light-guiding means positionable within the channel associated with said light detection means.
Claim 11
Dependent Claim 62 words
A monolithically integrated optical assembly, comprising: a plurality of light detection means; a plurality of channels each associated with a respective light detection means and including a V-groove; and a plurality of light generating means each interposed between and optically accessible to a respective light detection means and a respective light-guiding means positionable within the channel associated with said light detection means.
Claim 12
Dependent Claim 33 words
The monolithically integrated optical assembly as recited in claim 8 wherein: each of said light detection means includes a rear facet monitor photodetector; and each of said light generating means includes a laser.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-10-10 1998-04-11 1998-10-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-10-10 2002-04-11 2002-10-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-10-10 2006-04-11 2006-10-11 $7700.00 Window Closed / Lapsed

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