US5355002A
Expired / Lapsed
US
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Structure of high yield thin film transistors
Assignee: Industrial Technology Research Institute
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Filing: 1993-01-19
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Granted: 1994-10-11
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Expires: 2013-01-19
Abstract
Abstract In an active matrix liquid crystal display, an extra insulating layer is deposited over the active region of the thin film transistor and the transparent electrode of the picture element. The interconnection between the source electrode of the TFT and the transparent electrode lies over the extra insulating layer. The edge between the a-Si and S/D electrode contact is passivated by the extra insulating to avoid direct contact of the S/D metal electrode with the undoped amorphous silicon channel. Contacts to the TFT source and drain electrodes are made through a heavily-doped amorphous silicon to avoid direct contact of aluminum with undoped amorphous silicon channel, which can eliminate dark leakage current with negative gate bias. The metal contact to the transparent electrode is made via a contact hole in the extra insulating layer to avoid the etching solution of aluminum interconnection from attacking the transparent electrode. The extra insulating layer also prevents short circuit between the signal lines and the transparent electrodes.
Inventors
- 👤 Biing-Seng Wu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 13:24
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368; H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D86/00; G02F1/1333; G02F1/133345
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
229 words
A thin film field effect transistor (TFT) structure having a gate electrode and an active region with a source, a drain and a channel, and a field region outside said active region, comprising: an insulating substrate, a gate electrode on said substrate and longer than said active region, a first insulating layer covering said gate electrode, said active region comprises a first semiconductor layer on said first insulating layer, shorter than said gate electrode and serving as said source, said drain and said channel for said TFT, a second semiconductor layer and a third semiconductor layer, which are heavily doped and form contacts for said source and said drain, respectively, a second insulating layer over the first insulating layer covering a portion of top surface of said contacts for said source and said drain, a source metal interconnection to said source and a drain metal interconnection to said drain through the top surface of said of said contacts for the source and the drain, said source metal interconnection and said drain metal interconnection having edges aligned with the edges of said second semiconductor layer and said third semiconductor layer on top of said channel and separated from said gate through said first insulating layer and said second insulating layer, and overlaying said second insulating layer by non-electrical contact areas of said source metal interconnection and said drain metal interconnection.
Claim 2
Dependent Claim
229 words
A thin film field effect transistor (TFT) structure having a gate electrode and an active region with a source, a drain and a channel, and a field region outside said active region, comprising: an insulating substrate, a gate electrode on said substrate and longer than said active region, a first insulating layer covering said gate electrode, said active region comprises a first semiconductor layer on said first insulating layer, shorter than said gate electrode and serving as said source, said drain and said channel for said TFT, a second semiconductor layer and a third semiconductor layer, which are heavily doped and form contacts for said source and said drain, respectively, a second insulating layer over the first insulating layer covering a portion of top surface of said contacts for said source and said drain, a source metal interconnection to said source and a drain metal interconnection to said drain through the top surface of said of said contacts for the source and the drain, said source metal interconnection and said drain metal interconnection having edges aligned with the edges of said second semiconductor layer and said third semiconductor layer on top of said channel and separated from said gate through said first insulating layer and said second insulating layer, and overlaying said second insulating layer by non-electrical contact areas of said source metal interconnection and said drain metal interconnection.
Claim 3
Dependent Claim
13 words
A TFT structure as described in claim 1, wherein said substrate is transparent.
Claim 4
Dependent Claim
17 words
A TFT structure as described in claim 1, wherein said first semiconductor layer is amorphous silicon (a-Si).
Claim 5
Dependent Claim
19 words
A TFT structure as described in claim 1, wherein said second and third semiconductor layers are heavily doped a-Si.
Claim 6
Dependent Claim
30 words
A TFT structure as described in claim 1, wherein the metal for said gate electrode is selected from a group of metal consisting of Al, Cr, Mo, Ta and Ti.
Claim 7
Dependent Claim
19 words
A TFT structure as described in claim 1, wherein said first insulating layer is silicon nitride or silicon oxide.
Claim 8
Dependent Claim
19 words
A TFT structure as described in claim 1, wherein said second insulating layer is silicon nitride or silicon oxide.
Claim 9
Dependent Claim
54 words
A TFT structure as described in claim 1, wherein a transparent conducting layer is formed between said first insulating layer and said second insulating layer in a display region outside said active region, and is contacted to said source metal interconnection at a top surface through a contact hole in said second insulating layer.
Claim 10
Dependent Claim
35 words
A TFT structure as described in claim 1, wherein a transparent conducting layer is on the second insulating layer in a display region outside said active region, and is contacted to said source metal interconnection.
References Cited (Backward Citations)
JPS59124165A
Cited
US5166085A
Cited
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