Method of making dynamic random access semiconductor memory device

Claim 1

A method for manufacturing a dynamic semiconductor memory device wherein a memory cell includes a MOS transistor and a capacitor around a semiconductor pillar portion, said method comprising the steps of: forming a plurality of semiconductor pillar portions arranged in a matrix manner by forming a groove extending in first and second directions transverse to each other in a semiconductor substrate; forming a field isolation region in a central portion of said groove whereby said field isolation region extends along said groove; forming a gate electrode surrounding each of said semiconductor pillar portions and extending in the first direction of said matrix after forming a gate insulating film around said semiconductor pillar portions; forming a diffusion layer serving as a source or drain region in a groove bottom portion by use of said gate electrode as a mask; forming a storage node of said capacitor to surround each of said semiconductor pillar portions where said gate electrode is formed and to contact said diffusion layer after forming an interlayer insulating film on the surface of said gate electrode; burying a cell plate in said groove after forming a capacitor insulating film on the surface of said storage node; exposing the upper surface of said semiconductor pillar portion, after covering the upper surface of said cell plate with an interlayer insulating film, to form a diffusion layer serving as a source or drain region on the exposed upper surface; and forming a bit line extending in the second direction of said matrix by contacting the upper surface of said diffusion layer of said semiconductor pillar portions.

Claim 2

A method for manufacturing a dynamic semiconductor memory device wherein a memory cell includes a MOS transistor and a capacitor around a semiconductor pillar portion, said method comprising the steps of: forming a plurality of semiconductor pillar portions arranged in a matrix manner by forming a groove extending in first and second directions transverse to each other in a semiconductor substrate; forming a field isolation region in a central portion of said groove whereby said field isolation region extends along said groove; forming a gate electrode surrounding each of said semiconductor pillar portions and extending in the first direction of said matrix after forming a gate insulating film around said semiconductor pillar portions; forming a diffusion layer serving as a source or drain region in a groove bottom portion by use of said gate electrode as a mask; forming a storage node of said capacitor to surround each of said semiconductor pillar portions where said gate electrode is formed and to contact said diffusion layer after forming an interlayer insulating film on the surface of said gate electrode; burying a cell plate in said groove after forming a capacitor insulating film on the surface of said storage node; exposing the upper surface of said semiconductor pillar portion, after covering the upper surface of said cell plate with an interlayer insulating film, to form a diffusion layer serving as a source or drain region on the exposed upper surface; and forming a bit line extending in the second direction of said matrix by contacting the upper surface of said diffusion layer of said semiconductor pillar portions.