US5349207A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon carbide wafer bonded to a silicon wafer
Assignee: Texas Instruments Inc
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Filing: 1993-02-22
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Granted: 1994-09-20
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Expires: 2013-02-22
Abstract
Abstract A silicon carbide structure (10) and method capable of using existing silicon wafer fabrication facilities. A silicon wafer (20) is provided which has a first diameter. At least one silicon carbide wafer (30) is provided which has a given width and length (or diameter). The width and length (or diameter) of the silicon carbide wafer (30) are smaller than the diameter of the silicon wafer (20). The silicon wafer (20) and the silicon carbide wafer (30) are then bonded together. The bonding layer (58) may comprise silicon germanium, silicon dioxide, silicate glass or other materials. Structures such as MOSFET (62) may be then formed in silicon carbide wafer (30).
Inventors
- 👤 Satwinder Malhi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 16:15
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6741; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10P; H10P90/00; H10P90/19; H10P90/1902; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/10; Y; Y10; Y10S; Y10S148/00; Y10S148/148; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
71 words
A silicon carbide structure capable of using existing silicon wafer fabrication facilities comprising: a. a silicon wafer having a first diameter; b. at least one silicon carbide wafer having a predetermined maximum width and a predetermined maximum length, wherein said predetermined maximum width and predetermined maximum length are smaller than said first diameter; and c. a bonding layer located between said silicon wafer and said at least one silicon carbide wafer.
Claim 2
Dependent Claim
71 words
A silicon carbide structure capable of using existing silicon wafer fabrication facilities comprising: a. a silicon wafer having a first diameter; b. at least one silicon carbide wafer having a predetermined maximum width and a predetermined maximum length, wherein said predetermined maximum width and predetermined maximum length are smaller than said first diameter; and c. a bonding layer located between said silicon wafer and said at least one silicon carbide wafer.
Claim 3
Dependent Claim
18 words
The structure of claim 1 wherein said first diameter is in the range from four to eight inches.
Claim 4
Dependent Claim
13 words
The structure of claim 1 wherein said first diameter is approximately six inches.
Claim 5
Dependent Claim
28 words
The structure of claim 1 wherein said at least one silicon carbide wafer is circular and has a second diameter in the range of one to two inches.
Claim 6
Dependent Claim
25 words
The structure of claim 1 wherein said at least one silicon carbide wafer comprises a plurality of silicon carbide wafers arranged in a mosaic pattern.
Claim 7
Dependent Claim
32 words
The structure of claim 1 wherein said at least one silicon carbide wafer comprises a plurality of silicon carbide wafers having a second diameter, said second diameter smaller than said first diameter.
Claim 8
Dependent Claim
12 words
The structure of claim 1 wherein said bonding layer comprises silicon dioxide.
Claim 9
Dependent Claim
12 words
The structure of claim 1 wherein said bonding layer comprises silicon germanium.
Claim 10
Dependent Claim
12 words
The structure of claim 1 wherein said bonding layer comprises silicate glass.
Claim 11
Dependent Claim
17 words
The structure of claim 1 wherein said bonding layer has a melting point greater than 950° C.
Claim 12
Dependent Claim
18 words
The structure of claim 1 further comprising a transistor located in said at least one silicon carbide wafer.
Claim 13
Dependent Claim
11 words
The structure of claim 11 wherein said transistor comprises a MOSFET.
Claim 14
Dependent Claim
70 words
A silicon carbide structure capable of using existing silicon wafer fabrication facilities comprising: a silicon wafer having a first diameter; at least one silicon carbide wafer having a predetermined maximum width and a predetermined maximum length, wherein said predetermined maximum width and predetermined maximum length are smaller than said first diameter; and a silicon germanium bonding layer located between said silicon wafer and said at least one silicon carbide wafer.
Claim 15
Dependent Claim
70 words
A silicon carbide structure capable of using existing silicon wafer fabrication facilities comprising: a silicon wafer having a first diameter; at least one silicon carbide wafer having a predetermined maximum width and a predetermined maximum length, wherein said predetermined maximum width and predetermined maximum length are smaller than said first diameter; and a silicon germanium bonding layer located between said silicon wafer and said at least one silicon carbide wafer.
Claim 16
Dependent Claim
32 words
The structure of claim 13 wherein said at least one silicon carbide wafer comprises a plurality of silicon carbide wafers having a second diameter, said second diameter smaller than said first diameter.
Claim 17
Dependent Claim
18 words
The structure of claim 13 further comprising a transistor located in said at least one silicon carbide wafer.
Claim 18
Dependent Claim
11 words
The structure of claim 15 wherein said transistor comprises a MOSFET.
Claim 19
Dependent Claim
70 words
A silicon carbide structure capable of using existing silicon wafer fabrication facilities comprising: a silicon wafer having a first diameter; at least one silicon carbide wafer having a predetermined maximum width and a predetermined maximum length, wherein said predetermined maximum width and predetermined maximum length are smaller than said first diameter; and a silicate glass bonding layer located between said silicon wafer and said at least one silicon carbide wafer.
Claim 20
Dependent Claim
70 words
A silicon carbide structure capable of using existing silicon wafer fabrication facilities comprising: a silicon wafer having a first diameter; at least one silicon carbide wafer having a predetermined maximum width and a predetermined maximum length, wherein said predetermined maximum width and predetermined maximum length are smaller than said first diameter; and a silicate glass bonding layer located between said silicon wafer and said at least one silicon carbide wafer.
Claim 21
Dependent Claim
32 words
The structure of claim 17 wherein said at least one silicon carbide wafer comprises a plurality of silicon carbide wafers having a second diameter, said second diameter smaller than said first diameter.
Claim 22
Dependent Claim
18 words
The structure of claim 17 further comprising a transistor located in said at least one silicon carbide wafer.
Claim 23
Dependent Claim
11 words
The structure of claim 19 wherein said transistor comprises a MOSFET.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-09-19 | 1998-03-21 | 1998-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-09-19 | 2002-03-21 | 2002-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-09-19 | 2006-03-21 | 2006-09-20 | $7700.00 | Window Closed / Lapsed |